公开(公告)号：WO2006065580A3

公开(公告)日：2008-11-13

申请号：PCT/US2005044047

申请日：2005-12-05

Applicant: LAM RES CORP ,  WOODS CARL

Inventor： WOODS CARL

IPC: C25D5/04 ,  C25D7/12 ,  C25D17/06

CPC classification number: C25D17/06 ,  C25D5/02 ,  C25D17/00 ,  C25D17/001

Abstract: A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (107). The multi-layered wafer support apparatus includes a bottom film layer (201) and a top film layer (301). The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed- over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal (313) between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electric circuits (307a, 307b) that are each; defined to electrically contact a. peripheral top surface of the wafer at diametrically opposed locations about the wafer.

Abstract translation: 提供了一种用于对半导体晶片（107）进行电镀处理的多层晶片支撑装置。 多层晶片支撑装置包括底部薄膜层（201）和顶部薄膜层（301）。 底部薄膜层包括晶片放置区域和围绕晶片放置区域的牺牲阳极。 顶部薄膜层被定义为放置在底部薄膜层上。 顶部薄膜层包括位于要处理的晶片的表面上的开放区域，即电镀。 顶部薄膜层围绕开放区域的周边提供顶部薄膜层和晶片之间的液体密封（313）。 顶部薄膜层还包括第一和第二电路（307a，307b） 定义为电接触a。 在晶片周围的周向上表面在晶片周向的相对位置处。

公开(公告)号：WO2004030052A2

公开(公告)日：2004-04-08

申请号：PCT/US0331136

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

Abstract translation: 提供了衬底制备系统的许多实施例之一，其包括具有头表面的头部，其中头部表面靠近衬底的表面。 该系统还包括用于通过头部将第一流体输送至基底表面的第一导管以及用于通过头部将第二流体输送至基底表面的第二导管，其中第二流体不同于第一流体 流体。 该系统还包括第三管道，用于从第一管道，第二管道和第三管道基本同时起作用的衬底表面去除第一流体和第二流体中的每一个。 在替代实施例中，提供了一种用于处理基板的方法，其包括在基板的表面上产生流体弯月面并且将声能施加到流体弯月面。 该方法还包括将流体弯月面移动到衬底的表面上以处理衬底的表面。

公开(公告)号：WO2007005215A3

公开(公告)日：2009-04-23

申请号：PCT/US2006023134

申请日：2006-06-12

Applicant: LAM RES CORP ,  WOODS CARL ,  FARBER JEFFREY J

Inventor： WOODS CARL ,  FARBER JEFFREY J

IPC: B01D19/00

CPC classification number: B01D19/0068 ,  B01D19/0042

Abstract: A system (100) for producing bubble free liquid includes a continuous liquid source (102) and a de-bubbling chamber (104). The de- bubbling chamber (104) includes an outlet (108) and an inlet (112). The inlet (112) coupled to an outlet of the continuous liquid source by a supply pipe (106). The de-bubbling chamber (104) also includes at least one port (11OA-C) in a sidewall of the de-bubbling chamber (104). The at least one port (11OA-C) being at least a length L from the inlet (112) of the de-bubbling chamber (104). A method for producing bubble free liquid is also described.

Abstract translation: 用于产生无气泡液体的系统（100）包括连续液体源（102）和去气泡室（104）。 脱泡室（104）包括出口（108）和入口（112）。 入口（112）通过供应管（106）联接到连续液体源的出口。 除泡室（104）还包括在去气室（104）的侧壁中的至少一个端口（110A-C）。 所述至少一个端口（110A-C）距离去气室（104）的入口（112）至少为长度L。 还描述了一种生产无气泡液体的方法。

公开(公告)号：WO2004030051A3

公开(公告)日：2004-09-02

申请号：PCT/US0331051

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： WOODS CARL ,  GARCIA JAMES P ,  DE LARIOS JOHN ,  RAVKIN MIKE ,  REDEKER FRED C ,  NICKHOU AFSHIN

IPC: H01L21/00

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

Abstract: An apparatus and method for processing a wafer is provided. The system and method are designed to process a surface of a wafer using a meniscus. The meniscus is controlled and is capable of being moved over the surface of the wafer to enable cleaning, rinsing, chemical processing, and drying. The apparatus can be defined using a number of configurations to enable specific processing of the wafer surface using the meniscus, and such configurations can include the use of proximity heads.

Abstract translation: 提供了一种用于处理晶片的设备和方法。 该系统和方法被设计成使用弯月面来处理晶片的表面。 弯月面是受控制的，并且能够移动到晶片的表面上以实现清洁，冲洗，化学处理和干燥。 该设备可以使用多种配置来定义，以使得能够使用弯月面对晶片表面进行特定的处理，并且这样的配置可以包括使用邻近头。

公开(公告)号：JP2005294835A

公开(公告)日：2005-10-20

申请号：JP2005100372

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WOODS CARL

IPC: H01L21/304 ,  H01L21/00

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method where efficiency in supply of a fluid to a wafer surface and removal of the fluid therefrom is increased.
SOLUTION: A proximity head 106 includes source supply inlets 1302,1306 and a source outlet 1304. An isopropyl alcohol vapor 1310 contained in a nitrogen gas is supplied onto the wafer surface through the inlet 1302, a vacuum 1312 is created on the wafer surface through the outlet 1304, and a treating liquid is supplied onto the wafer surface through the source supply inlet 1306. A fluid mechanics 140 can be generated by creating the vacuum 1312 to remove the liquid 1310 from the wafer surface 108a and by supplying the liquid 1310. The mechanics 140 is a fluid layer formed between the head 106 and the wafer surface, and can be moved across the surface 108a in a stable and controllable condition.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种装置和方法，其中提供流体对晶片表面的效率和从其中除去流体的效率。 解决方案：邻近头106包括源供应入口1302,1306和源出口1304.氮气中包含的异丙醇蒸汽1310通过入口1302供应到晶片表面上，在 晶片表面通过出口1304，并且处理液体通过源供应入口1306供应到晶片表面上。流体力学140可以通过产生真空1312以从晶片表面108a去除液体1310并通过供应 液体1310.力学140是在头部106和晶片表面之间形成的流体层，并且可以在稳定且可控的状态下移动穿过表面108a。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006009153A

公开(公告)日：2006-01-12

申请号：JP2005186277

申请日：2005-06-27

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C ,  WOODS CARL

IPC: C25D17/00 ,  C25D5/04 ,  C25D7/12 ,  C25D17/06 ,  C25D17/10 ,  C25D21/00 ,  H01L21/288

CPC classification number: C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method for plating the whole of a semiconductor wafer having many electrodes at a uniform current distribution. SOLUTION: First and second electrodes 107A, 107B are disposed at locations, respectively, proximate to a periphery of a wafer support 103, wherein the locations are substantially opposed to each other relative to the wafer support 103. Each of the electrodes can be moved to electrically connect with and disconnect from a wafer 101 held by the wafer support 103. An anode 109 is disposed over and proximate to the wafer 101 such that a meniscus 111 of electroplating solution is maintained between the anode 109 and the wafer 101. As the anode 109 moves over the wafer 101 from the first location to the second location, an electric current is applied through the meniscus 111 between the anode 109 and the wafer 101. Also, as the anode 109 is moved over the wafer 101, the first and second electrodes 107A, 107B are controlled to connect with the wafer 101 while ensuring that the anode 109 does not pass over an electrode that is connected. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种以均匀电流分布电镀具有许多电极的整个半导体晶片的装置和方法。 解决方案：第一和第二电极107A，107B分别设置在靠近晶片支撑件103的周边的位置处，其中，这些位置相对于晶片支撑件103基本上彼此相对。每个电极可以 被移动以与由晶片支撑件103保持的晶片101电连接和断开。阳极109设置在晶片101上方并且靠近晶片101，使得电镀溶液的弯月面111保持在阳极109和晶片101之间。 当阳极109从晶片101从第一位置移动到第二位置时，通过阳极109和晶片101之间的弯液面111施加电流。而且，当阳极109移动到晶片101上时， 第一和第二电极107A，107B被控制以与晶片101连接，同时确保阳极109不通过连接的电极。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006016692A

公开(公告)日：2006-01-19

申请号：JP2005188066

申请日：2005-06-28

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： DORDI YEZDI N ,  REDEKER FRED C ,  BOYD JOHN M ,  MARASCHIN ROBERT ,  WOODS CARL

IPC: C25D7/12 ,  C25D5/04 ,  C25D19/00 ,  C25D21/08 ,  C25D21/12

CPC classification number: C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

Abstract: PROBLEM TO BE SOLVED: To provide a method for electroplating the surface of a wafer, which can perform local plating, reduce total plating current and improve the evenness of a deposit.
SOLUTION: The electroplating apparatus comprises a plating head capable of being set on the upper or lower part of the surface of a wafer and capable of being charged as an anode. The plating head enables metal plating between the surface of the wafer and the plating head when the wafer and the plating head are charged. The plating head is equipped with a voltage sensor couple capable of sensing a voltage between the plating head and the surface of the wafer and a controller capable of receiving data from the voltage sensor couple. The received date from the voltage sensor couple are used for the controller to keep a voltage to be applied by the anode substantially constant when the plating head is placed on a position above the surface of the wafer.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供可以进行局部电镀的晶片表面的电镀方法，减少总电镀电流并提高沉积物的均匀性。 解决方案：电镀装置包括能够设置在晶片表面的上部或下部并能够作为阳极充电的电镀头。 当晶片和电镀头被充电时，电镀头可以在晶片的表面和电镀头之间进行金属电镀。 电镀头配备有能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 电压传感器对的接收日期用于控制器，当电镀头放置在晶片表面上方的位置时，使阳极施加的电压基本恒定。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005340781A

公开(公告)日：2005-12-08

申请号：JP2005100378

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN ,  GARCIA JAMES P ,  DE LARIOS JOHN M

IPC: B05C9/02 ,  B05D1/00 ,  B05D3/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/67063 ,  B05C9/02 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To reduce contamination and reduce wafer cleaning cost in semiconductor wafer processing.
SOLUTION: Management of movement of a manifold carrier 104, movement of a secondary manifold 102, flow-in and drain of a fluid between a primary manifold 106 and the secondary manifold 102, and flow-in and drain of a fluid using a flow-in channel and a drain channel are managed by a fluid controller 250. The fluid controller 250 comprises any appropriate software and/or hardware that is executable of appropriate adjustment and movement required for monitoring wafer processing and processing a wafer 108 as required using the primary manifold 106, secondary manifold 102, and manifold carrier 104. The secondary manifold 102 further moves the primary manifold 106 to an opening 109.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：减少半导体晶片加工中的污染和降低晶圆清洗成本。 解决方案：管理歧管支架104的运动，辅助歧管102的运动，在主歧管106和次级歧管102之间的流体的流入和排出，以及流体的流入和排出，使用 流体通道和排出通道由流体控制器250管理。流体控制器250包括任何适当的软件和/或硬件，其可执行适当的调整和移动，用于根据需要监视晶片处理和处理晶片108所需的使用 主歧管106，次级歧管102和歧管载体104.次级歧管102进一步将主歧管106移动到开口109.版权所有：（C）2006，JPO＆NCIPI

公开(公告)号：JP2005311355A

公开(公告)日：2005-11-04

申请号：JP2005100384

申请日：2005-03-31

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： WOODS CARL ,  SMITH MICHAEL G R ,  PARKS JOHN

IPC: B05D1/00 ,  B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  C23C18/16 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306

CPC classification number: B08B3/02 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D21/00 ,  H01L21/02057 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/6708 ,  Y10S134/902

Abstract: PROBLEM TO BE SOLVED: To provide a substrate processing apparatus that can manage fluids on wafer surfaces, while reducing contamination. SOLUTION: A wafer processing operation, that can be conducted by a proximity head 106a, is illustrated. Although a top surface 108a being processed is shown, it should be noted that wafer processing can be accomplished, in substantially the same way for a bottom surface 108b of a wafer 108. In one embodiment, inlets 302 can be utilized to supply isopropyl alcohol (IPA) vapor toward the top surface 108a of the wafer 108, and an inlet 306 can be utilized to supply a processing fluid toward the top surface 108a of the wafer 108. In addition, outlets 304 can be utilized to suck a region in close proximity to the wafer surface to remove fluid or vapor that can be located on or near the top surface 108a. As described above, any suitable combination of inlets and outlets may be utilized, as long as a meniscus 116 can be formed. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够在减少污染的同时管理晶片表面上的流体的基板处理装置。 解决方案：示出了可由接近头部106a进行的晶片处理操作。 尽管示出了正在处理的顶部表面108a，但是应当注意，晶片处理可以以基本相同的方式对晶片108的底部表面108b进行。在一个实施例中，入口302可用于提供异丙醇 IPA）蒸汽朝向晶片108的顶表面108a，并且入口306可用于朝向晶片108的顶表面108a供应处理流体。此外，出口304可用于吸附紧邻的区域 到晶片表面以去除可以位于顶表面108a上或附近的流体或蒸汽。 如上所述，可以使用入口和出口的任何合适的组合，只要能够形成弯液面116即可。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：AT552612T

公开(公告)日：2012-04-15

申请号：AT03799316

申请日：2003-09-29

Applicant: LAM RES CORP

Inventor： WOODS CARL ,  GARCIA JAMES ,  DE LARIOS JOHN ,  RAVKIN MICHAEL ,  REDEKER FRED

IPC: H01L21/67 ,  B08B3/04