SYSTEM AND METHOD FOR WAFER CARRIER VIBRATION REDUCTION
    1.
    发明申请
    SYSTEM AND METHOD FOR WAFER CARRIER VIBRATION REDUCTION 审中-公开
    用于晶片载波振动减小的系统和方法

    公开(公告)号:WO2011050117A2

    公开(公告)日:2011-04-28

    申请号:PCT/US2010053455

    申请日:2010-10-21

    CPC classification number: H01L21/67259 H01L21/67028 H01L21/67253

    Abstract: An aspect of the present invention provides a system and method for controlling a wafer cleaning system having a wafer carrier and a driving portion. The wafer carrier can move along a path in a first direction and a second direction. The driving portion can controllably move the wafer carrier in the first direction and the second direction. The control system includes a vibration sensor portion and a wafer carrier position controller. The vibration sensor portion can detect vibration of the wafer carrier and can output a vibration signal based on the detected vibration. The wafer carrier position controller can instruct the driving portion to modify motion of the wafer carrier based on the vibration signal to reduce the detected vibration.

    Abstract translation: 本发明的一个方面提供了一种用于控制具有晶片载体和驱动部分的晶片清洁系统的系统和方法。 晶片载体可以沿第一方向和第二方向的路径移动。 驱动部分可以在第一方向和第二方向上可控制地移动晶片载体。 控制系统包括振动传感器部分和晶片载体位置控制器。 振动传感器部分可以检测晶片载体的振动,并且可以基于检测到的振动输出振动信号。 晶圆承载器位置控制器可以指示驱动部分基于振动信号来修改晶圆承载器的运动,以减少检测到的振动。

    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL
    2.
    发明申请
    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL 审中-公开
    测量晶片偏置电位的方法和装置

    公开(公告)号:WO2011021160A3

    公开(公告)日:2011-08-11

    申请号:PCT/IB2010053735

    申请日:2010-08-18

    CPC classification number: H01J37/32642 H01J37/32935

    Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

    Abstract translation: 一种用于具有等离子体形成体积和热边缘环的晶片处理室中的装置。 热边缘环具有第一表面和第二表面。 第一表面与等离子体形成体积接触。 第二表面不与等离子体形成体积接触。 该装置包括可操作以接触热边缘环的第二表面的检测器。 检测器可以检测热边缘环的参数并且可以基于检测到的参数提供检测到的信号。

    NON-DESTRUCTIVE SIGNAL PROPAGATION SYSTEM AND METHOD TO DETERMINE SUBSTRATE INTEGRITY
    3.
    发明申请
    NON-DESTRUCTIVE SIGNAL PROPAGATION SYSTEM AND METHOD TO DETERMINE SUBSTRATE INTEGRITY 审中-公开
    非破坏性信号传播系统和确定基板完整性的方法

    公开(公告)号:WO2010128432A3

    公开(公告)日:2011-03-03

    申请号:PCT/IB2010051855

    申请日:2010-04-28

    Inventor: VALCORE JOHN

    Abstract: In various exemplary embodiments described herein, a system and associated method relate to non-destructive signal propagation to detect one or more defects in a substrate. The system can be built into a semiconductor process tool such as a substrate handling mechanism. The system comprises a transducer configured to convert one or more frequencies from an electrical signal into at least one mechanical pulse. The mechanical pulse is coupled to the substrate through the substrate handling mechanism. A plurality of sensors is positioned distal to the transducer and configured to be coupled, acoustically or mechanically, to the substrate. The plurality of distal sensors is further configured to detect both the mechanical pulse and any distortions to the pulse. A signal analyzer is coupled to the plurality of distal sensors to compare the detected pulse and any distortions to the pulse with a baseline response.

    Abstract translation: 在本文描述的各种示例性实施例中,系统和相关联的方法涉及非破坏性信号传播以检测衬底中的一个或多个缺陷。 该系统可以内置在诸如基板处理机构的半导体处理工具中。 该系统包括被配置为将一个或多个频率从电信号转换成至少一个机械脉冲的换能器。 机械脉冲通过基板处理机构耦合到基板。 多个传感器位于换能器的远侧并且被配置为与声学或机械地耦合到基底。 多个远端传感器还被配置为检测机械脉冲和对脉冲的任何失真。 信号分析器耦合到多个远端传感器,以将检测到的脉冲和具有基线响应的脉冲的任何失真进行比较。

    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL

    公开(公告)号:SG178285A1

    公开(公告)日:2012-03-29

    申请号:SG2012008272

    申请日:2010-08-18

    Applicant: LAM RES CORP

    Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

    NON-DESTRUCTIVE SIGNAL PROPAGATION SYSTEM AND METHOD TO DETERMINE SUBSTRATE INTEGRITY

    公开(公告)号:SG175790A1

    公开(公告)日:2011-12-29

    申请号:SG2011078284

    申请日:2010-04-28

    Applicant: LAM RES CORP

    Inventor: VALCORE JOHN

    Abstract: In various exemplary embodiments described herein, a system and associated method relate to non-destructive signal propagation to detect one or more defects in a substrate. The system can be built into a semiconductor process tool such as a substrate handling mechanism. The system comprises a transducer configured to convert one or more frequencies from an electrical signal into at least one mechanical pulse. The mechanical pulse is coupled to the substrate through the substrate handling mechanism. A plurality of sensors is positioned distal to the transducer and configured to be coupled, acoustically or mechanically, to the substrate. The plurality of distal sensors is further configured to detect both the mechanical pulse and any distortions to the pulse. A signal analyzer is coupled to the plurality of distal sensors to compare the detected pulse and any distortions to the pulse with a baseline response.

Patent Agency Ranking