METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL
    1.
    发明申请
    METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL 审中-公开
    基于等离子体信号耦合到基底位置和潜力的等离子体去离子优化的方法和装置

    公开(公告)号:WO2011031590A3

    公开(公告)日:2011-06-30

    申请号:PCT/US2010047382

    申请日:2010-08-31

    CPC classification number: H01L21/6833 H01J37/32091 H01J37/32935

    Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

    Abstract translation: 一种用于优化解扣序列的方法,其包括从下电极去除衬底。 该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。 如果是这样,关闭惰性气体。 该方法还包括从下电极稍微升高升降器销,以向上移动基板。 该方法还包括执行机械和电气分析,其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。 机械和电气分析还包括将第二组电特性数据与阈值进行比较。 如果两者都穿过相应的阈值,则由于发生了衬底释放事件而从底部电极去除衬底。

    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL
    2.
    发明申请
    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL 审中-公开
    测量晶片偏置电位的方法和装置

    公开(公告)号:WO2011021160A3

    公开(公告)日:2011-08-11

    申请号:PCT/IB2010053735

    申请日:2010-08-18

    CPC classification number: H01J37/32642 H01J37/32935

    Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

    Abstract translation: 一种用于具有等离子体形成体积和热边缘环的晶片处理室中的装置。 热边缘环具有第一表面和第二表面。 第一表面与等离子体形成体积接触。 第二表面不与等离子体形成体积接触。 该装置包括可操作以接触热边缘环的第二表面的检测器。 检测器可以检测热边缘环的参数并且可以基于检测到的参数提供检测到的信号。

    METHOD FOR USING AN RC CIRCUIT TO MODEL TRAPPED CHARGE IN AN ELECTROSTATIC CHUCK
    3.
    发明申请
    METHOD FOR USING AN RC CIRCUIT TO MODEL TRAPPED CHARGE IN AN ELECTROSTATIC CHUCK 审中-公开
    使用RC电路模拟静电卡盘中的陷阱电荷的方法

    公开(公告)号:WO2009078949A3

    公开(公告)日:2009-10-01

    申请号:PCT/US2008013635

    申请日:2008-12-12

    CPC classification number: H02N13/00 H01L21/6833

    Abstract: A method for simulating the effect of trapped charge in an electrostatic chuck on the chuck performance comprises creating a trapped-charge electrical model having a trapped-charge capacitor and a gap-trapped resistor, and coupling the model to a plurality of voltage sources. The trapped-charge capacitor and the gap-trapped resistor may be varied in relation to a plurality of electrostatic chuck physical parameters.

    Abstract translation: 用于模拟静电卡盘中的俘获电荷对卡盘性能的影响的方法包括创建具有俘获电荷电容器和间隙俘获电阻器的俘获电荷电模型,并将该模型耦合到多个电压源。 俘获电荷电容器和间隙俘获电阻器可以相对于多个静电吸盘物理参数而变化。

    METHOD AND APPARATUS FOR MEASURING WAFER BIAS POTENTIAL

    公开(公告)号:SG178285A1

    公开(公告)日:2012-03-29

    申请号:SG2012008272

    申请日:2010-08-18

    Applicant: LAM RES CORP

    Abstract: A device for use in a wafer processing chamber having a plasma forming volume and a hot edge ring. The hot edge ring has a first surface and a second surface. The first surface is in contact with the plasma forming volume. The second surface is not in contact with the plasma forming volume. The device includes a detector operable to contact the second surface of the hot edge ring. The detector can detect a parameter of the hot edge ring and can provide a detected signal based on the detected parameter.

    METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL

    公开(公告)号:SG178372A1

    公开(公告)日:2012-03-29

    申请号:SG2012009627

    申请日:2010-08-31

    Applicant: LAM RES CORP

    Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

    METHODS AND ARRANGEMENT FOR PLASMA DECHUCK OPTIMIZATION BASED ON COUPLING OF PLASMA SIGNALING TO SUBSTRATE POSITION AND POTENTIAL

    公开(公告)号:SG10201405047VA

    公开(公告)日:2014-10-30

    申请号:SG10201405047V

    申请日:2010-08-31

    Applicant: LAM RES CORP

    Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

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