公开(公告)号：WO2008036210A3

公开(公告)日：2008-07-31

申请号：PCT/US2007020050

申请日：2007-09-14

Applicant: LAM RES CORP ,  KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

Inventor： KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

IPC: H01T23/00

CPC classification number: H01J37/32935 ,  H01J37/321 ,  H01J37/32174 ,  H01L22/26

Abstract: Apparatus and methods are provided to detect and control a voltage potential (68) applied in a plasma chamber (40) for processing a semiconductor wafer (46). The plasma chamber includes circuitry (82) for monitoring and adjusting a pulsed RF bias voltage signal (6 to be applied to a chuck (66) in the plasma chamber, where the chuck is configured to mount the wafer for processing. Further include is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

Abstract translation: 提供了用于检测和控制施加在等离子体室（40）中用于处理半导体晶片（46）的电压电位（68）的装置和方法。 等离子体室包括用于监测和调节脉冲RF偏置电压信号（6）以被施加到等离子体室中的卡盘（66）的电路（82），其中卡盘被配置为安装用于处理的晶片，还包括 反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

公开(公告)号：SG174831A1

公开(公告)日：2011-10-28

申请号：SG2011068012

申请日：2007-09-14

Applicant: LAM RES CORP

Inventor： KUTHI ANDRAS ,  HWANG STEPHEN ,  VETTER JAMES C ,  EILENSTINE GREG ,  NGO TUAN ,  WANG RONGPING

Abstract: OF THE DISCLOSUREMETHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSINGApparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.Figure 3