INTEGRATED FULL WAVELENGTH SPECTROMETER FOR WAFER PROCESSING
    1.
    发明申请
    INTEGRATED FULL WAVELENGTH SPECTROMETER FOR WAFER PROCESSING 审中-公开
    用于波浪加工的集成全波长光谱仪

    公开(公告)号:WO0175934A3

    公开(公告)日:2002-05-02

    申请号:PCT/US0108667

    申请日:2001-03-16

    CPC classification number: H01J37/32935 G01N23/20 H01J37/32972

    Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

    Abstract translation: 具有控制处理室的计算机系统的处理室连接到一个或多个光谱仪。 光谱仪可以是干涉仪的一部分,也可以是光发射光谱仪。 光谱仪可以是2,048个元件的CCD或光电二极管阵列。 输入板构成计算机系统的一部分,并直接连接到光谱仪。 输入板将数据从光谱仪提供给双端口存储器,可直接访问计算机系统的CPU。 在输入板上使用状态机和加法器允许将数据从光谱仪计算和放置到双端口存储器,以便CPU不需要这样的放置。

    INTEGRATED ELECTRONIC HARDWARE FOR WAFER PROCESSING CONTROL AND DIAGNOSTIC
    2.
    发明申请
    INTEGRATED ELECTRONIC HARDWARE FOR WAFER PROCESSING CONTROL AND DIAGNOSTIC 审中-公开
    用于晶圆加工控制和诊断的集成电子硬件

    公开(公告)号:WO0203429A3

    公开(公告)日:2002-10-17

    申请号:PCT/US0120800

    申请日:2001-06-29

    Applicant: LAM RES CORP

    Abstract: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (cpu) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment. A method for controlling a plurality of sensors and a plurality of control hardware for use in a semiconductor manufacturing equipment loads an application software onto a cpu board that is plugged in a bus. Sensors and control hardware are linked to electrical controllers that are mounted onto a single circuit board which occupies an address block in a memory space of the bus. The single circuit board is then plugged in the bus and the sensors and control hardware are controlled via the application software.

    Abstract translation: 在半导体制造设备中使用的中央控制器将多个控制器集成在一起,该开放式架构允许各种控制回路之间的实时通信。 中央控制器包括至少一个执行高级输入输出(I / O)和控制算法的中央处理单元(cpu)以及至少一个提供与传感器和控制硬件的集成接口的集成I / O控制器。 集成的I / O控制器执行基本的I / O和低级控制功能,并通过总线与CPU通信,以执行或启用半导体制造设备各个子系统的控制。 用于控制在半导体制造设备中使用的多个传感器和多个控制硬件的方法将应用软件加载到插入总线的cpu板上。 传感器和控制硬件与电气控制器连接,电气控制器安装在单个电路板上,占用总线存储空间中的地址块。 然后将单电路板插入总线,并通过应用软件控制传感器和控制硬件。

    METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING
    3.
    发明申请
    METHODS OF AND APPARATUS FOR MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
    用于测量和控制脉冲RF偏置加工中的波长电位的方法和装置

    公开(公告)号:WO2008036210A3

    公开(公告)日:2008-07-31

    申请号:PCT/US2007020050

    申请日:2007-09-14

    CPC classification number: H01J37/32935 H01J37/321 H01J37/32174 H01L22/26

    Abstract: Apparatus and methods are provided to detect and control a voltage potential (68) applied in a plasma chamber (40) for processing a semiconductor wafer (46). The plasma chamber includes circuitry (82) for monitoring and adjusting a pulsed RF bias voltage signal (6 to be applied to a chuck (66) in the plasma chamber, where the chuck is configured to mount the wafer for processing. Further include is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.

    Abstract translation: 提供了用于检测和控制施加在等离子体室(40)中用于处理半导体晶片(46)的电压电位(68)的装置和方法。 等离子体室包括用于监测和调节脉冲RF偏置电压信号(6)以被施加到等离子体室中的卡盘(66)的电路(82),其中卡盘被配置为安装用于处理的晶片,还包括 反馈电路,用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

    Method of and apparatus for controlling reactive impedance of matching network connected between rf source and rf plasma processor
    4.
    发明专利
    Method of and apparatus for controlling reactive impedance of matching network connected between rf source and rf plasma processor 有权
    控制射频源与RF等离子处理器之间连接的匹配网络的反应性阻抗的方法和装置

    公开(公告)号:JP2009218213A

    公开(公告)日:2009-09-24

    申请号:JP2009107835

    申请日:2009-04-27

    CPC classification number: H01J37/32174 H01J37/32082 H03H7/40

    Abstract: PROBLEM TO BE SOLVED: To provide a method of and apparatus for controlling reactive impedances of a matching network which can achieve optimum match rapidly. SOLUTION: A high frequency source 14 and a high frequency plasma processor are connected via the matching network which controls tuning of a load including reactive impedance elements 12 and plasma to the high frequency source 14. The values of the first and second variable reactances 18, 20 are changed to determine an amount that the first variable reactance 18 is to change for each unit change of the second variable reactance 20 in order to attain the best matching between the impedances appearing inside and outside output terminals of the high frequency source 14. Then the values of the first and second variable reactances 18, 20 are varied based on the above determination until the best possible matching between the impedances appearing inside and outside the output terminals of the high frequency source 14 is attained. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于控制匹配网络的无功阻抗的方法和装置,其可以快速实现最佳匹配。 解决方案:高频源14和高频等离子体处理器经由匹配网络连接,匹配网络将包括无功阻抗元件12和等离子体的负载的调谐控制到高频源14。第一和第二变量 电抗18,20被改变以确定第一可变电抗18对于第二可变电抗20的每个单位变化而改变的量,以便获得出现在高频源的内部和外部输出端之间的阻抗之间的最佳匹配 然后,基于上述确定来改变第一和第二可变电抗18,20的值,直到达到高频源14的输出端之间出现的阻抗之间的最佳匹配。 版权所有(C)2009,JPO&INPIT

    6.
    发明专利
    未知

    公开(公告)号:DE69723649D1

    公开(公告)日:2003-08-28

    申请号:DE69723649

    申请日:1997-05-23

    Applicant: LAM RES CORP

    Abstract: An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

    7.
    发明专利
    未知

    公开(公告)号:DE69723649T2

    公开(公告)日:2004-06-03

    申请号:DE69723649

    申请日:1997-05-23

    Applicant: LAM RES CORP

    Abstract: An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

    8.
    发明专利
    未知

    公开(公告)号:DE60127257T2

    公开(公告)日:2007-07-05

    申请号:DE60127257

    申请日:2001-06-29

    Applicant: LAM RES CORP

    Abstract: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.

    9.
    发明专利
    未知

    公开(公告)号:ES2202623T3

    公开(公告)日:2004-04-01

    申请号:ES97925671

    申请日:1997-05-23

    Applicant: LAM RES CORP

    Abstract: An r.f. field is supplied by a reactive impedance element to a plasma in a vacuum plasma processing chamber. The element and source are connected via a matching network including first and second variable reactances that control loading of the source and tuning a load, including the reactive impedance element and the plasma, to the source. The values of the first and second variable reactances are changed to determine the amount the first variable reactance is to change for each unit change of the second variable reactance to attain the best match between the impedances seen looking into and out of output terminals of the r.f. source. Then the values of the first and second variable reactances are varied simultaneously based on the determination until the best impedance match between the impedances seen looking into and out of output terminals of the r.f. source is attained.

    Integrated full wavelength spectrometer for wafer processing

    公开(公告)号:AU5292701A

    公开(公告)日:2001-10-15

    申请号:AU5292701

    申请日:2001-03-16

    Applicant: LAM RES CORP

    Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.

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