公开(公告)号：WO0039838A3

公开(公告)日：2000-11-16

申请号：PCT/US9931076

申请日：1999-12-28

Applicant: LAM RES CORP

Inventor： WICKER THOMAS ,  COOK JOEL ,  CHEN JIAN

IPC: H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32009 ,  H01J37/321 ,  H01J37/3266

Abstract: The invention relates to a plasma processing reactor for processing a substrate. The plasma processing reactor includes a process chamber. The plasma processing reactor further includes an inductive coil configured to be coupled to a RF power source having a RF frequency wherein the inductive coil generates an electric field inside of the process chamber. The plasma processing reactor additionally includes a magnetic field producing device configured to produce a magnetic field inside the process chamber in proximity of the electric field.

Abstract translation: 本发明涉及用于处理衬底的等离子体处理反应器。 等离子体处理反应器包括处理室。 等离子体处理反应器还包括电感线圈，该电感线圈被配置成耦合到具有RF频率的RF电源，其中感应线圈在处理室内产生电场。 等离子体处理反应器还包括磁场产生装置，该磁场产生装置被配置为在电场附近的处理室内部产生磁场。

公开(公告)号：AT364896T

公开(公告)日：2007-07-15

申请号：AT02719377

申请日：2002-03-29

Applicant: LAM RES CORP

Inventor： VELTROP ROBERT ,  CHEN JIAN ,  WICKER THOMAS

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/205 ,  H01L21/3065

Abstract: An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

公开(公告)号：AT416474T

公开(公告)日：2008-12-15

申请号：AT97941540

申请日：1997-09-17

Applicant: LAM RES CORP

Inventor： WICKER THOMAS ,  MARASCHIN ROBERT

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/505 ,  H01L21/302 ,  H01L21/31

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.