公开(公告)号：WO2005069947A3

公开(公告)日：2006-10-12

申请号：PCT/US2005001809

申请日：2005-01-20

Applicant: LEXMARK INT INC

Inventor： BELL BYRON V ,  CORNELL ROBERT W ,  GUAN YIMIN ,  PARISH GEORGE K

IPC: B41J2/05 ,  B41J2/14

CPC classification number: B41J2/14129 ,  B41J2202/03 ,  Y10T29/49082 ,  Y10T29/49098 ,  Y10T29/49099 ,  Y10T29/49163 ,  Y10T29/49346 ,  Y10T29/49401

Abstract: A semiconductor substrate for a micro-fluid ejection head. The substrate includes a plurality of fluid ejection actuators disposed on the substrate. Each of the fluid ejection actuators includes a thin heater stack comprising a thin film heater and one or more protective layers adjacent the heater. The thin film heater is made of a tantalum-aluminum-nitride thin film material having a nano-crystalline structure consisting essentially of A1N, TaN, and TaA1 alloys, and has a sheet resistance ranging from about 30 to about 100 ohms per square. The thin film material contains from about 30 to about 70 atomic% tantalum, from about 10 to about 40 atomic% aluminum and from about 5 to about 30 atomic% nitrogen.

Abstract translation: 一种用于微流体喷射头的半导体衬底。 衬底包括设置在衬底上的多个流体喷射致动器。 每个流体喷射致动器包括薄加热器堆叠，其包括薄膜加热器和与加热器相邻的一个或多个保护层。 薄膜加热器由具有主要由AlN，TaN和TaAl合金组成的纳米晶体结构的钽 - 氮化铝薄膜材料制成，并且具有约30至约100欧姆/平方的薄层电阻。 薄膜材料含有约30至约70原子％的钽，约10至约40原子％的铝和约5至约30原子％的氮。

公开(公告)号：WO2005038872A2

公开(公告)日：2005-04-28

申请号：PCT/US2004033771

申请日：2004-10-13

Applicant: LEXMARK INT INC

Inventor： BELL BYRON V ,  GUAN YIMIN

IPC: B41J2/14 ,  H01L

CPC classification number: B41J2/14129

Abstract: An ink jet printhead for an ink jet printer and method for making an improved printhead. The printhead includes a nozzle plate attached to a heater chip. The heater chip is a semiconductor substrate having a resistive layer deposited on the substrate, a dielectric layer deposited on the resistive layer, a cavitation layer for contact with ink, and an adhesion layer between the dielectric layer and cavitation layer. The adhesion layer is selected from the group consisting of tantalum nitride (TaN), tantalum oxide (TaO), silicon nitride (SiN), and titanium nitride (TiN), provided the adhesion layer and cavitation layer are selected so that the adhesion layer has no elemental component in common with the cavitation layer when the dielectric layer is comprised of SiC/SiN. Adhesion between the dielectric layer and cavitation layer is significantly enhanced by the invention.

Abstract translation: 一种用于喷墨打印机的喷墨打印头和用于制造改进的打印头的方法。 打印头包括附接到加热器芯片的喷嘴板。 加热器芯片是具有沉积在基板上的电阻层，沉积在电阻层上的介电层，与油墨接触的空穴层以及介电层和空化层之间的粘合层的半导体基板。 粘合层选自氮化钽（TaN），氧化钽（TaO），氮化硅（SiN）和氮化钛（TiN），只要选择粘合层和空穴层，使得粘附层具有 当介电层由SiC / SiN组成时，没有与空化层共同的元素分量。 通过本发明，电介质层和空化层之间的粘合力显着增强。

公开(公告)号：WO2006026333A3

公开(公告)日：2006-12-07

申请号：PCT/US2005030198

申请日：2005-08-25

Applicant: LEXMARK INT INC

Inventor： ANDERSON FRANK E ,  BELL BYRON V ,  CORNELL ROBERT W ,  GUAN YIMIN

IPC: B41J2/05

CPC classification number: B41J2/1603 ,  B41J2/14129 ,  B41J2/1628 ,  B41J2/164 ,  Y10T29/49401

Abstract: A micro-fluid ejection device structure and method therefor having improved low energy design. The devices includes a semiconductor substrate and an insulating layer deposited on the semiconductor substrate. A plurality of heater resistors are formed on the insulating layer from a resistive layer selected from the group consisting of TaAI, Ta2N, TaAI(O,N), TaA1Si, Ti(N,O), WSi(O,N), TaA1N, and TaAI/TaA1N. A sacrificial layer selected from an oxidizable metal and having a thickness ranging from about 500 to about 5000 Angstroms is deposited on the plurality of heater resistors. Electrodes are formed on the sacrificial layer from a first metal conductive layer to provide anode and cathode connections to the plurality of heater resistors. The sacrificial layer is oxidized in a plasma oxidation process to provide a fluid contact layer on the plurality of heater resistors.

Abstract translation: 一种具有改进的低能量设计的微流体喷射装置结构及其方法。 这些器件包括沉积在半导体衬底上的半导体衬底和绝缘层。 在绝缘层上形成多个加热电阻，该电阻层选自TaAI，Ta2N，TaAl（O，N），TaAlSi，Ti（N，O），WSi（O，N），TaAlN， 和TaAI / TaA1N。 选自可氧化金属并且具有约500至约5000埃的厚度的牺牲层沉积在多个加热电阻器上。 电极从第一金属导电层形成在牺牲层上，以提供与多个加热电阻器的阳极和阴极连接。 牺牲层在等离子体氧化过程中被氧化以在多个加热电阻器上提供流体接触层。

公开(公告)号：WO2006036379A2

公开(公告)日：2006-04-06

申请号：PCT/US2005029728

申请日：2005-08-19

Applicant: LEXMARK INT INC

Inventor： GUAN YIMIN ,  SUN JING X ,  SUN MARK NAIYU

IPC: C09D11/00 ,  B41J2/01

CPC classification number: C09D11/30

Abstract: A silver dispersion is obtained by reducing a silver compound in the presence of a polymeric dispersant of an ionic hydrophilic segments, such as methacrylic acid segments con and nonionic hydrophilic segments such as hydroxyl terminated polyethylene glycol segments. Aqueous inkjet inks may contain such dispersants and other common ingredients such as a humectant. The inks can be printed on ceramic substrates and sintered under heat to form solid, conductive patterns of silver.

Abstract translation: 在离子性亲水链段如聚甲基丙烯酸链段con和非离子亲水链段如羟基封端的聚乙二醇链段的聚合物分散剂的存在下还原银化合物可获得银分散体。 水性喷墨油墨可以含有这样的分散剂和其它常用成分如保湿剂。 油墨可以印刷在陶瓷基板上并在加热下烧结以形成固体，导电图案的银。

公开(公告)号：WO2004061933B1

公开(公告)日：2004-11-25

申请号：PCT/US0341263

申请日：2003-12-24

Applicant: LEXMARK INT INC

Inventor： BELL BYRON VENCENT ,  GUAN YIMIN

IPC: B41J2/14 ,  B41J2/16 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48

CPC classification number: H01L21/76843 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  H01L21/76865

Abstract: A semiconductor device containing at least one transistor (14) and at least one heater resistor (18) in a heater resistor area adjacent the at least one transistor on a semiconductor substrate (22). The device includes a silicon substrate (22) containing contact openings for metal contacts (34) to the at least one transistor. A barrier layer (42) is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy). A conductive layer (44) is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.

Abstract translation: 一种半导体器件，在半导体衬底（22）上的与至少一个晶体管相邻的加热器电阻器区域中包含至少一个晶体管（14）和至少一个加热电阻器（18）。 该器件包括硅衬底（22），该硅衬底包含用于与至少一个晶体管的金属触点（34）的接触开口。 阻挡层（42）位于接触开口中和加热电阻器区域中，并提供扩散阻挡层/加热器电阻层。 阻挡层选自由TaN，Ta / TaAl，TaN / TaAl，TiWN，TaAlN，TiN，Ta（Nx，Oy），WSi（Nx，Oy），TaSi，TaSiN，WSiN和TaSi（Nx ，Oy）。 导电层（44）与阻挡层的至少一部分相邻，用于提供电源与至少一个加热器电阻器和至少一个晶体管之间的连接。 半导体器件在加热器电阻器区域中没有图案化和蚀刻的阻挡层。

公开(公告)号：WO2007005379A3

公开(公告)日：2009-04-16

申请号：PCT/US2006024829

申请日：2006-06-23

Applicant: LEXMARK INT INC ,  BELL BYRON V ,  CORNELL ROBERT W ,  GUAN YIMIN ,  JOYNER BURTON L

Inventor： BELL BYRON V ,  CORNELL ROBERT W ,  GUAN YIMIN ,  JOYNER BURTON L

IPC: B41J2/05

CPC classification number: B41J2/14129

Abstract: The present disclosure is directed to a micro-fluid ejection head for a microfluid ejection device. The head includes a semiconductor substrate, a fluid ejection actuator supported by the semiconductor substrate, a nozzle member containing nozzle holes attached to the substrate for expelling droplets of fluid from one or more nozzle holes in the nozzle member upon activation of the ejection actuator. The substrate further includes a thermal insulating barrier layer between the semiconductor substrate and the fluid ejection actuator. The thermal insulating barrier layer includes a porous, substantially impermeable material having a thermal conductivity of less than about 1 W/m-K.

Abstract translation: 本公开涉及用于微流体喷射装置的微流体喷射头。 头部包括半导体衬底，由半导体衬底支撑的流体喷射致动器，喷嘴构件，其包含附接到衬底的喷嘴孔，用于在激活喷射致动器时从喷嘴构件中的一个或多个喷嘴孔排出流体液滴。 衬底还包括在半导体衬底和流体喷射致动器之间的绝热阻挡层。 绝热阻隔层包括具有小于约1W / m-K的热导率的多孔的基本上不可渗透的材料。

公开(公告)号：WO2008005257A3

公开(公告)日：2008-10-02

申请号：PCT/US2007014931

申请日：2007-06-27

Applicant: LEXMARK INT INC ,  CORNELL ROBERT WILSON ,  GUAN YIMIN ,  JOYNER BURTON LEE II

Inventor： CORNELL ROBERT WILSON ,  GUAN YIMIN ,  JOYNER BURTON LEE II

IPC: B41J2/14 ,  B41J2/16 ,  B41J2/335 ,  B41J2/345

CPC classification number: B41J2/1629 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  Y10T29/49083

Abstract: A substantially planar fluid ejection actuator (30) and methods for manufacturing substantially planar fluid ejection actuators for micro- fluid ejection heads (80). One such fluid ejection actuator includes a conductive layer (36) adjacent to a substrate (32) that is configured to define an anode segment (36A) spaced apart from a cathode segment (36B). A thermal barrier segment (38) is disposed between the anode and cathode segments. A substantially planar surface is defined by the anode segment, cathode segment, and the thermal barrier segment A resistive layer (40) is applied adjacent to the substantially planar surface.

Abstract translation: 基本上平面的流体喷射致动器（30）以及用于制造用于微流体喷射头（80）的基本上平面的流体喷射致动器的方法。 一个这样的流体喷射致动器包括邻近衬底（32）的导电层（36），其被配置为限定与阴极段（36B）间隔开的阳极段（36A）。 热障段（38）设置在阳极和阴极段之间。 基本平坦的表面由阳极段，阴极段和热障段A限定。电阻层（40）邻近基本平坦的表面施加。

公开(公告)号：WO2004060676B1

公开(公告)日：2005-05-19

申请号：PCT/US0341245

申请日：2003-12-24

Applicant: LEXMARK INT INC

Inventor： ANDERSON FRANK E ,  BELL BYRON V ,  CORNELL ROBERT ,  GUAN YIMIN ,  PARISH GEORGE KEITH

IPC: B41J2/14 ,  B41J2/05

CPC classification number: B41J2/14129 ,  B41J2202/03

Abstract: An inkjet printhead heater chip has a silicon substrate with a heater stack formed of a plurality of thin film layers thereon for ejecting an ink drop during use. The thin film layers include: a thermal barrier layer on the silicon substrate; a resistor layer on the thermal barrier layer; a doped diamond-like carbon layer on the resistor layer; and a cavitation layer on the doped diamond-like carbon layer. The doped diamond-like carbon layer preferably includes silicon but may also include nitrogen, titanium, tantalum, combinations thereof or other. When it includes silicon, a preferred silicon concentration ranges from 20 to 25 atomic percent. A preferred cavitation layer includes an undoped diamond-like carbon, tantalum or titanium layer. The doped diamond-like carbon layer ranges in thickness from 500 to 3000 angstroms. The cavitation layer ranges from 500 to 6000 angstroms. Inkjet printheads and printers are also disclosed.

Abstract translation: 喷墨打印头加热器芯片具有硅基板，其上具有由多个薄膜层形成的加热器叠层，用于在使用期间喷射墨滴。 薄膜层包括：硅衬底上的热障层; 在热障层上的电阻层; 在电阻器层上的掺杂类金刚石碳层; 和在掺杂类金刚石碳层上的空化层。 掺杂的类金刚石碳层优选包括硅，但也可以包括氮，钛，钽，它们的组合或其他。 当它包含硅时，优选的硅浓度范围从20到25原子百分比。 优选的空化层包括未掺杂的类金刚石碳，钽或钛层。 掺杂类金刚石碳层的厚度范围为500至3000埃。 空化层的范围从500到6000埃。 还公开了喷墨打印头和打印机。

公开(公告)号：WO2004060676A3

公开(公告)日：2005-03-31

申请号：PCT/US0341245

申请日：2003-12-24

Applicant: LEXMARK INT INC

Inventor： ANDERSON FRANK E ,  BELL BYRON V ,  CORNELL ROBERT ,  GUAN YIMIN ,  PARISH GEORGE KEITH

IPC: B41J2/14 ,  B41J2/05

CPC classification number: B41J2/14129 ,  B41J2202/03

Abstract: An inkjet printhead heater chip has a silicon substrate with a heater stack formed of a plurality of thin film layers thereon for ejecting an ink drop during use. The thin film layers include: a thermal barrier layer on the silicon substrate; a resistor layer on the thermal barrier layer; a doped diamond-like carbon layer on the resistor layer; and a cavitation layer on the doped diamond-like carbon layer. The doped diamond-like carbon layer preferably includes silicon but may also include nitrogen, titanium, tantalum, combinations thereof or other. When it includes silicon, a preferred silicon concentration ranges from 20 to 25 atomic percent. A preferred cavitation layer includes an undoped diamond-like carbon, tantalum or titanium layer. The doped diamond-like carbon layer ranges in thickness from 500 to 3000 angstroms. The cavitation layer ranges from 500 to 6000 angstroms. Inkjet printheads and printers are also disclosed.

Abstract translation: 喷墨打印头加热器芯片具有硅衬底，其具有由其上的多个薄膜层形成的加热器堆叠，用于在使用期间喷射墨滴。 薄膜层包括：硅衬底上的热障层; 阻热层上的电阻层; 电阻层上的掺杂类金刚石碳层; 以及掺杂的类金刚石碳层上的空穴层。 掺杂的类金刚石碳层优选包括硅，但也可包括氮，钛，钽，其组合或其它。 当其包括硅时，优选的硅浓度范围为20至25原子％。 优选的空化层包括未掺杂的类金刚石碳，钽或钛层。 掺杂的类金刚石碳层的厚度范围为500至3000埃。 空化层的范围为500至6000埃。 还公开了喷墨打印头和打印机。

公开(公告)号：EP1588412A4

公开(公告)日：2009-06-10

申请号：EP03814963

申请日：2003-12-24

Applicant: LEXMARK INT INC

Inventor： BELL BYRON VENCENT ,  GUAN YIMIN

IPC: B41J2/14 ,  B41J2/16 ,  H01L21/768 ,  H01L21/4763 ,  H01L23/48

CPC classification number: H01L21/76843 ,  B41J2/14129 ,  B41J2/1601 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13 ,  H01L21/76865

Abstract: A semiconductor device containing at least one transistor (14) and at least one heater resistor (18) in a heater resistor area adjacent the at least one transistor on a semiconductor substrate (22). The device includes a silicon substrate (22) containing contact openings for metal contacts (34) to the at least one transistor. A barrier layer (42) is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(Nx, Oy), WSi(Nx, Oy), TaSi, TaSiN, WSiN, and TaSi(Nx, Oy). A conductive layer (44) is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.