公开(公告)号：WO2018190583A1

公开(公告)日：2018-10-18

申请号：PCT/KR2018/004103

申请日：2018-04-06

Applicant: LG ELECTRONICS INC.

Inventor： HEO, Younho ,  KIM, Soohyun ,  LEE, Hyun ,  JEONG, Changhyun

IPC: H01L31/18 ,  H01L31/0304 ,  H01L31/0224 ,  H01L31/0392

CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/02168 ,  H01L31/0304 ,  H01L31/1868 ,  H01L31/1888 ,  H01L31/1892 ,  Y02E10/50

Abstract: According to an aspect of the present invention, there is provided a method for manufacturing a compound semiconductor solar cell, comprising: forming a sacrificial layer on one surface of a mother substrate; forming a compound semiconductor layer on the sacrificial layer; forming a first protective layer formed of a compound semiconductor on the compound semiconductor layer; depositing a second passivation layer on the first passivation layer; attaching a first lamination film on the second protective layer; separating the compound semiconductor layer, the first and second protective layers, and the first lamination film from the mother substrate by performing an ELO process to remove the sacrificial layer; forming a back electrode on the compound semiconductor layer; attaching a second lamination film on the back electrode; removing the first lamination film; removing the second protective layer; removing the first protective layer; and forming a front electrode on the compound semiconductor layer.

公开(公告)号：WO2018190569A1

公开(公告)日：2018-10-18

申请号：PCT/KR2018/004039

申请日：2018-04-05

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Soohyun ,  LEE, Hyun ,  CHOI, Wonseok ,  HEO, Younho

IPC: H01L31/0304 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/072

CPC classification number: H01L31/0725 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/544

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising a first cell, the first cell including: a first base layer formed of a gallium indium phosphide (GaInP)-based compound semiconductor; a first emitter layer forming a p-n junction with the first base layer; a first window layer positioned on a front surface of the first base layer or the first emitter layer; and a first back surface field layer positioned on a back surface of the first emitter layer or the first base layer, wherein the first window layer of the first cell is formed of a four-component III-V compound semiconductor.

公开(公告)号：WO2018155938A1

公开(公告)日：2018-08-30

申请号：PCT/KR2018/002217

申请日：2018-02-22

Applicant: LG ELECTRONICS INC.

Inventor： KIM, Soohyun ,  KIM, Gunho ,  LEE, Hyun ,  CHOI, Wonseok ,  HEO, Younho

IPC: H01L31/042 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/035281 ,  H01L31/022425 ,  H01L31/0735 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/186 ,  H01L31/1892 ,  Y02E10/544 ,  Y02P70/521

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The compound semiconductor solar cell includes a compound semiconductor layer, a front electrode positioned on a front surface of the compound semiconductor layer, a back electrode positioned on a back surfaceof the compound semiconductor layer, a defect portion disposed within the compound semiconductor layer and physically and electrically connected to the back electrode, and an isolation portion surroundingthe defect portion.