公开(公告)号：JP2000208430A

公开(公告)日：2000-07-28

申请号：JP2000006222

申请日：2000-01-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SANDER SRINIVASAN CHETTLER ,  AISHIKKU C KIZURIYARI ,  MICHAEL A LARRY ,  MA YI ,  ALAN R MASSENGEERU ,  ROY PRADIP K

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To reduce hot carrier injection and deterioration by incorporating nitrogen of high concentration in an interface between a lightly doped drain structure and a gate oxide. SOLUTION: Lightly doped drain structures 36, 38 are formed by a first doping in source and drain regions 28, 30. After a spacer 40 is formed in a vertical sidewall 22 of a gate conductor region, source and drain injection matters 42, 44 which are deeper and wider than the lightly doped drain structures 36, 38 and whose dopant concentration is further high are formed in the source and drain regions 28, 30. The drain region 30 is annealed in atmosphere of at least one kind of nitrogen oxide, ammonia and dinitrogen monoxide. Thereby, nitrogen of high concentration can be incorporated in silicon/silicon dioxide interface between a gate oxide 24 and the lightly doped drain structure 38.