公开(公告)号：JP2000208430A

公开(公告)日：2000-07-28

申请号：JP2000006222

申请日：2000-01-12

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SANDER SRINIVASAN CHETTLER ,  AISHIKKU C KIZURIYARI ,  MICHAEL A LARRY ,  MA YI ,  ALAN R MASSENGEERU ,  ROY PRADIP K

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To reduce hot carrier injection and deterioration by incorporating nitrogen of high concentration in an interface between a lightly doped drain structure and a gate oxide. SOLUTION: Lightly doped drain structures 36, 38 are formed by a first doping in source and drain regions 28, 30. After a spacer 40 is formed in a vertical sidewall 22 of a gate conductor region, source and drain injection matters 42, 44 which are deeper and wider than the lightly doped drain structures 36, 38 and whose dopant concentration is further high are formed in the source and drain regions 28, 30. The drain region 30 is annealed in atmosphere of at least one kind of nitrogen oxide, ammonia and dinitrogen monoxide. Thereby, nitrogen of high concentration can be incorporated in silicon/silicon dioxide interface between a gate oxide 24 and the lightly doped drain structure 38.

公开(公告)号：JP2000208731A

公开(公告)日：2000-07-28

申请号：JP2000004300

申请日：2000-01-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SANDER SRINIVASAN CHETTLER ,  JAMES THEODORE CLEMENS ,  MERCHANT SAILESH M ,  ROY PRADIP K ,  HEMU M VAIDEA

IPC: H01L27/10 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a capacity of an integrated circuit including a fixed plug. SOLUTION: The capacity of an integrated circuit contains a substrate, a first dielectric substance layer 26 which is adjacent to the substrate and is provided with a first groove in the substrate, and a first metal plug 30 extending upward in the first groove 28. A mutual connection line 32 lies on the first groove 28 and is in contact with the first metal plug 30 for specifying a fixed recessed part on the opposite side to the first metal plug 30. A second dielectric substance layer 36 lies on the mutual connection line 32 and is provided with a second groove 38 therein. The second metal plug 22 extends upwards in the second groove 38. More specifically, the second metal plug 22 includes a base body extending upwards in the second groove 38 and a fixing part, which is connected with the base body and of which fixing recessed part allows the second metal plug 32 to be fixed to the mutual connection line 32. The second groove 38 can be made deep for fixing the second metal plug 22, without loosening the metal plug and separation thereof from the lower mutual connection line.

公开(公告)号：JP2000208730A

公开(公告)日：2000-07-28

申请号：JP2000004299

申请日：2000-01-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SAMIA CHAADORII ,  SANDER SRINIVASAN CHETTLER ,  NEISU RAYADI ,  ROY PRADIP K ,  HEMU M VAIDEA

IPC: H01L21/02 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a capacity of an integrated circuit including a plug having a gradient. SOLUTION: The capacity of an integrated circuit contains a first dielectric substance layer 42 which is arranged adjacent to a substrate 24 and is provided with a groove therein and a metallic plug 32, which includes an upper part extending upward in the groove and a lower part arranged in the first dielectric substance layer 42. The lower part has a width having gradient increasing in the direction of the substrate, thereby fixing the metallic plug 32 in the dielectric substance layer 42. The upper part is preferably provided having a gradient as well. Furthermore, a second dielectric substance layer 38 is adjacent to the metallic plug 32 and is provided with an upper electrode 40 thereon.