公开(公告)号：JPH10190001A

公开(公告)日：1998-07-21

申请号：JP33139897

申请日：1997-12-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  DODABALAPUR ANANTH ,  FENG YI ,  RAJU VENKATARAM REDDY

IPC: C09K3/00 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To form an organic semiconductor layer by forming an active layer of organic material and permitting the layer to have a carrier mobility of a specific value or higher and a conductivity of a specific value or lower. SOLUTION: An active semiconductor layer is formed of organic polymer having a carrier mobility of approximately 10 cm /Vs or higher and a conductivity of approximately 10 s/cm or lower. An organic material active layer is composed of regioregular homopolymer (3-alkylthiophene). The alkyl group has at least 2-12 carbon atoms and is represented by a character R. Branched chains, such as isopropyl and isobutyl, and straight chain alkyl are the examples of the alkyl group. In the regioregular homopolymer of the 3-alkylthiophene monomer, the orientation of the alkl group of the thiophene part is regular in regard to the thiophene part which adjoins the polymer chain.

公开(公告)号：JP2001230421A

公开(公告)日：2001-08-24

申请号：JP2000372277

申请日：2000-12-07

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHANDROSS EDWIN A ,  DODABALAPUR ANANTH ,  KATZ HOWARD EDAN ,  RAJU VENKATARAM REDDY

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L23/52 ,  H01L27/12 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing an integrated circuit device. SOLUTION: An integrated circuit device includes a plurality of TFTs and an electrical connection structure. In a process according to the present invention, at least part of constituent elements of the TFT are formed on the first substrate 10; at least an interconnection structure is formed on the second substrate 40; these two substrates 10, 40 are laminated to form an integrated circuit device having the TFTs.

公开(公告)号：JP2000068523A

公开(公告)日：2000-03-03

申请号：JP23334299

申请日：1999-08-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DODABALAPUR ANANTH

IPC: H01L21/336 ,  H01L21/74 ,  H01L21/77 ,  H01L21/84 ,  H01L23/52 ,  H01L27/12 ,  H01L27/28 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30

Abstract: PROBLEM TO BE SOLVED: To attain high yield and low cost by turning the structure body upside down a mutual connection while adjoining a substrate so that an active element is positioned at a top part. SOLUTION: A first level-first level dielectrics 15 is formed on a first level metal pattern. An inter-level dielectrics is covered with a patterned mask, and to mutually connect first and second levels, a part of the dielectrics 15 exposed through an opening part of a resist is etched. Th opening part of a mask conforms to a metal runner 14 of a mutual connection pattern of the first level. A metal 19 of second level is vapor-deposited on the first level-first level mutual connection 15. One of the runners for a second level metalized mutual connection is positioned at a window 18 between levels. Thus, an IC structure body, wherein process is simple and cost is low, is manufactured.

公开(公告)号：JP2001203364A

公开(公告)日：2001-07-27

申请号：JP2000362320

申请日：2000-11-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHANDROSS EDWIN A ,  CRONE BRIAN KEITH ,  DODABALAPUR ANANTH ,  FILAS ROBERT WILLIAM

IPC: H01L21/28 ,  H01L21/288 ,  H01L21/336 ,  H01L21/44 ,  H01L29/786 ,  H01L51/10 ,  H01L51/40

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor which can prolong the effective life of an organic semiconductor device. SOLUTION: A source-drain contact material adapted to an organic semiconductor in a thin film transistor integrated circuit is nickel/gold wherein nickel is plated as Ni-P on a base conductor (preferably TiNx) by electroless plating, and an upper layer of gold is deposited by substitution plating. Thus, it was unexpectedly found that the life of a TFT device is substantially prolonged by forming the Ni/Au contact.

公开(公告)号：JP2000208274A

公开(公告)日：2000-07-28

申请号：JP2000016564

申请日：2000-01-26

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DODABALAPUR ANANTH ,  JORDAN REBECCA ,  STRUKELJ MARKO

IPC: H04N5/70 ,  C09K11/06 ,  H01L33/00 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To provide effective white light emission by providing a blue light emitting material having a non-high polymer molecular structure including a structure selected from an imidazole structure having a substituent of at least three pendant side chains, a quinoline structure and a pyrazine structure, and setting the crystal size to a specific value. SOLUTION: An imidazole structure is expressed by formula I, and in the formula, R1 and R2 are the same, and are a phenyl group and a methoxyphenyl group, R3 is different from R1 and R2, and is a phenyl group and a naphthyl group. A quinoline structure is expressed by formula II, and in the formula, R1 is F, Cl, Br atoms, R2 is an H atom, a phenyl group, a methoxyphenyl group and a naphthyl group, and R3 is a phenyl group, a methoxyphenyl group and a naphthyl group. A pyrazine structure is expressed by formula III, and in the formula, R1 and R2 are a cyano group, R3 and R4 are a (t)-butyl phenoxyphenyl group and a methoxyphenyl group. The crystal size of a blue light emitting material layer is set not more than about 1000 Å.

公开(公告)号：JPH1041071A

公开(公告)日：1998-02-13

申请号：JP8633697

申请日：1997-04-04

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DODABALAPUR ANANTH ,  MILLER TIMOTHY MARK ,  LEWIS JOSIAH ROTHBERG

IPC: H01L51/50 ,  H01L51/52 ,  H05B33/02 ,  H05B33/12 ,  H05B33/22 ,  H05B33/24 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To reduce deviation in a wavelength of an emitted light associated with a change in the field of view by forming a micro-cavity layer on a substrate. SOLUTION: A uniform micro-cavity layer structure 15 of a light emitting device is formed on a conical portion of a substrate 42. Light is radiated through a bottom surface 43 of the substrate 42. The wedge angle ψ of a conical portion 42b is relatively small as 8-15 degrees. The layer structure 15 is the same as that of a planar light emitting device and the thickness and the refractive index of each layer affect the emitted light spectrum in the direction normal to each zone of the layer structure 15. Light emission as seen from a distant field of view at each angle of Θ on the X-Y plane is approximated by addition of light emissions from opposing portions 15a, 15b of the layer structure 15. Therefore, the portions 15a, 15b may be deemed as two planar light emitting devices disposed obliquely to each other. It is understood due to its shape that a change in a wavelength associated with a sight angle is reduced by the addition of spectrum.

公开(公告)号：JP2002310969A

公开(公告)日：2002-10-23

申请号：JP2002042898

申请日：2002-02-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  CRONE BRIAN KEITH ,  DODABALAPUR ANANTH ,  GELPERIN ALAN ,  KATZ HOWARD EDAN

IPC: G01N27/12 ,  G01N27/04 ,  G01N27/414 ,  G01N33/00

Abstract: PROBLEM TO BE SOLVED: To provide a modified electronic odor sensor. SOLUTION: The electronic odor sensor contains first and second amplifiers, a biasing network and a device so connected as to receive output signals from the first and second amplifiers. The device is so arranged as to correlate the output signals received to the presence or non-presence of the odor. The first and second amplifiers have first and second organic semiconductor layers respectively, and generate output signals responding to the electric conductivity of the respective organic semiconductor layers. The electric conductivity of the organic semiconductor layers corresponds to the existence of voltages or odors applied to those related among the amplifiers. The biasing network applies voltages to the amplifiers.

公开(公告)号：JP2000029403A

公开(公告)日：2000-01-28

申请号：JP14899099

申请日：1999-05-28

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAO ZHENAN ,  DODABALAPUR ANANTH ,  KATZ HOWARD EDAN ,  RAJU VENKATARAM REDDY ,  ROGERS JOHN A

IPC: H01L29/786 ,  G09F9/30 ,  H01L27/15 ,  H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H05B33/14 ,  H05B33/26

Abstract: PROBLEM TO BE SOLVED: To obtain an economical and good efficient device by monolithically integrating thin-film transistors(TFTs) with light emitting diodes(LEDs) and forming active layers of the LEDs and the semiconductor layers of the TFTs of org. materials. SOLUTION: The monolithically integrated org. TFTs and org. LEDs 200 are formed by first depositing a conductive layer on transparent substrate 205. The layer acts both as the gate 215 of the electric field effect (TFT) (FET) 201 and the anode 216 of the LED 202. Next, a dielectric layer 220 of the FET 201 is formed. After the conductive layer and dielectric layer 220 are formed on the substrate 205, the source electrode 225 and drain electrode 226 of the FET 201 or the semiconductor material 230 of the FET is deposited. Since the semiconductor material 230 is not used as a hole transfer body, the layer of a hole transfer body 235 is formed in order to obtain necessary characteristics. An electron transfer body/emitter layer 240 is deposited on the hole transfer body 235 and in succession, a cathode 245 is deposited to complete the LED 202.

公开(公告)号：JPH11223701A

公开(公告)日：1999-08-17

申请号：JP33049098

申请日：1998-11-20

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BERGGREN MAGNUS ,  DODABALAPUR ANANTH ,  STEIGERWALD MICHAEL LOUIS

IPC: G02B6/00 ,  G02B1/02 ,  G02B6/122 ,  G02F1/015 ,  G02F1/017

Abstract: PROBLEM TO BE SOLVED: To provide a crystalline material which is usable with an electro-optic modulator operative at a high frequency and wide range wavelength and exhibits a high peak absorbance difference and high peak refractive index difference. SOLUTION: The crystalline material obtainable from III-V, II-VI or IV semiconductor microcrystals is embedded into a polymer material, by which the optical material indicating the high peak absorbance difference and high peak refractive index difference is obtd. The crystalline material is a CdSe crystal having a size of a diameter below 5.8 mn, more preferably a diameter below about 4 nm and is embedded into poly(vinyl pyridine). The crystalline material inserted between two electrodes delineates the optical modulator. The crystalline material of which 10% crystals are embedded into the polymer exhibits the absorbance difference spectrum (ΔA) of about 50 cm at a wavelength of about 610 nm and the refractive index difference (Δn) of about 10 at a wavelength of about 625 nm by impressing voltage of 100 V.

公开(公告)号：JP2000163015A

公开(公告)日：2000-06-16

申请号：JP33358299

申请日：1999-11-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DODABALAPUR ANANTH ,  SARPESHKAR RAHUL

IPC: H04N5/66 ,  G09G3/20 ,  G09G3/30 ,  G09G3/32

Abstract: PROBLEM TO BE SOLVED: To reduce or eliminate at least some of nonidealities by providing a driving/compensating circuit which is so selected as to at least reduce >=1 nonideality and arranging at least part of the driving/compensating circuit in a 2nd substrate area. SOLUTION: The systematic LED 11 of the driving/compensating circuit is controlled by a systematic FET p1. The gate voltage Vc of the FET P1 determines the current of the LED 11. A transistor P2 resets Vc to Vdd with a short active low pulse on RST. This driving/compensating circuit is operated by the systematic FET P1 selected as an arbitrary choice and the FET P1 is arranged in the 2nd substrate area nearby the LED 11. Then this driving/ compesating circuit relates to systematic smart pixels of the display device and performs compensation for nonidealities each time a given pixel is addressed or reset.