公开(公告)号：JPH1174265A

公开(公告)日：1999-03-16

申请号：JP16977498

申请日：1998-06-17

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRADY DAVID C ,  KIZILYALLI ISIK C ,  ROY PRADIP K ,  VAIDYA HEM M

IPC: H01L21/316 ,  H01L21/318 ,  H01L21/32 ,  H01L21/76

Abstract: PROBLEM TO BE SOLVED: To prevent lifting phenomenon of a laminate of a semiconductor structure, especially with a pad oxide layer by constituting an insulative structured body of a uniform thickness by forming a first laminated sub-layer at a first deposit speed and a second laminated sub-layer at a second deposit speed on a substrate one by one. SOLUTION: A first laminated sub-layer is formed at a first deposit speed and a second laminated sub-layer is formed at a second deposit speed on a substrate, constituting an insulation structure body of a uniform thickness. The first deposit speed in the range of 0.5 to 1 nm/minute is desirable, and the second deposit velocity in the range of 3 to 5 nm/minute is desirable. Move specifically, a field oxide 20 is insulated and formed between insulation structure bodies 16 on a semiconductor wafer 10. The thin field oxide 20 of about 150 to 250 nm reduces a length of bird's beak and reduces relief phenomenon of a lamination body. A stress inside the insulation structure body 16 is reduced since the lifting phenomenon is reduced.