公开(公告)号：JP2000150783A

公开(公告)日：2000-05-30

申请号：JP31118199

申请日：1999-11-01

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BELK NATHAN ,  COCHRAN WILLIAM THOMAS ,  TSU-RONG CHU JEROME ,  FREI MICHEL RANJIT ,  GOLDTHORP DAVID ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR ,  MOINIAN SHAHRIAR ,  NG KWOK K ,  PINTO MARK RICHARD ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve the Q factor of an inductor in an integrated circuit by forming a buried layer in a substrate, forming a conductive layer on the buried layer, and composing the inductor with the conductive layer and the buried layer. SOLUTION: A low dopant bulk substrate 100 is annealed, and a dopant is moved from a solid dispersion source 102 into the low-dopant bulk substrate 100, thus forming a buried layer 105. After that, a cap layer 104 and the solid dispersion source 102 are eliminated by an etching agent, a low-doped layer 110 is formed, an interlevel dielectric layer 115 is formed on it, and a plurality of conductive layers 120a, 120b, and 120c are provided at the interlevel dielectric layer 115. Further, a conductive layer 130 is formed on it, and an inductor is composed of the conductive layer 130 and the buried layer 105, thus improving the Q factor of the inductor in the integrated circuit.

公开(公告)号：JP2001089296A

公开(公告)日：2001-04-03

申请号：JP31118299

申请日：1999-11-01

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TSU-RONG CHU JEROME ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR

IPC: H01L21/822 ,  C30B29/06 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L23/522 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor device having a high Q inductor substrate. SOLUTION: A method of forming a semiconductor substrate is comprised of the step of forming a base substrate containing a dopant in some concentration on a semiconductor wafer and the step of forming an epitaxial(EPI) layer on the base substrate. Further, the step of forming the EPI layer on the base substrate is comprised of the step of forming a first doped area epitaxially and the step of forming a second doped area epitaxially on the first doped area. In the first doped area, the dopant is contained in a concentration higher than that of the dopant contained in the base substrate, and in the second doped area, the dopant is contained in a concentration lower than that of the dopant contained in the first doped area.

公开(公告)号：DE69937868D1

公开(公告)日：2008-02-14

申请号：DE69937868

申请日：1999-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TSU-RONG CHU JEROME ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/205 ,  H01L21/285 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：DE69937868T2

公开(公告)日：2009-01-02

申请号：DE69937868

申请日：1999-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： TSU-RONG CHU JEROME ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/205 ,  H01L21/285 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.