公开(公告)号：JP2000150251A

公开(公告)日：2000-05-30

申请号：JP25568699

申请日：1999-09-09

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BARBER BRADLEY PAUL ,  BELK NATHAN ,  BISHOP DAVID JOHN ,  GAMMEL PETER LEDEL

IPC: B81C1/00 ,  H01F17/00 ,  H01F27/06 ,  H01L21/02 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To provide an MEMS(microelectromachining system) type inductor capable of monolithic integration. SOLUTION: An inductor 102 is constituted of a conductive loop 104, whose one or more coils are suspended above the upper part of a substrate 100 by at least two conductive supports 110 and 114, including a passive self-assembly means. In an example, the passive self-assembly means includes a layer, having a high level specific stress provided on the conductive supports 110 and 114. A stress layer is accumulated on the structure layer (for example, polysilicon) of the conductive supports 110 and 114. When the structure of the supports of the inductor is 'released' in manufacture process by removing a certain sacrificial layer, the stress layer contracts and residual distortion can be reduced. As a result, an upward force is impressed to the free edge of the supports to which the conductive loop belongs. Thus, the supports 110 and 114 and the loop can be separated and lifted up from the substrate 100.

公开(公告)号：JP2000150783A

公开(公告)日：2000-05-30

申请号：JP31118199

申请日：1999-11-01

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BELK NATHAN ,  COCHRAN WILLIAM THOMAS ,  TSU-RONG CHU JEROME ,  FREI MICHEL RANJIT ,  GOLDTHORP DAVID ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR ,  MOINIAN SHAHRIAR ,  NG KWOK K ,  PINTO MARK RICHARD ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve the Q factor of an inductor in an integrated circuit by forming a buried layer in a substrate, forming a conductive layer on the buried layer, and composing the inductor with the conductive layer and the buried layer. SOLUTION: A low dopant bulk substrate 100 is annealed, and a dopant is moved from a solid dispersion source 102 into the low-dopant bulk substrate 100, thus forming a buried layer 105. After that, a cap layer 104 and the solid dispersion source 102 are eliminated by an etching agent, a low-doped layer 110 is formed, an interlevel dielectric layer 115 is formed on it, and a plurality of conductive layers 120a, 120b, and 120c are provided at the interlevel dielectric layer 115. Further, a conductive layer 130 is formed on it, and an inductor is composed of the conductive layer 130 and the buried layer 105, thus improving the Q factor of the inductor in the integrated circuit.

公开(公告)号：DE69936175D1

公开(公告)日：2007-07-12

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：DE69936175T2

公开(公告)日：2008-01-24

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：DE69937217T2

公开(公告)日：2008-07-03

申请号：DE69937217

申请日：1999-08-31

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BARBER BRADLEY PAUL ,  BELK NATHAN ,  BISHOP DAVID JOHN ,  GAMMEL PETER LEDEL

IPC: B81C1/00 ,  H01L27/08 ,  H01F17/00 ,  H01F27/06 ,  H01L21/02

Abstract: An article comprising a micro-machined, passively self-assembling inductor (102) is disclosed. The inductor is fabricated using MEMS technology and advantageously utilizes materials compatible with CMOS such that the inductor is monolithically integrable with a CMOS chip. The inductor includes passive self-assembly means (110, 114) by which the inductor loop (104) is moved away from an underlying substrate (100), typically silicon, in the final steps of inductor assembly. Such passive self-assembly does not require separate actuation or monitoring steps.

公开(公告)号：DE69937217D1

公开(公告)日：2007-11-15

申请号：DE69937217

申请日：1999-08-31

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BARBER BRADLEY PAUL ,  BELK NATHAN ,  BISHOP DAVID JOHN ,  GAMMEL PETER LEDEL

IPC: B81C1/00 ,  H01L27/08 ,  H01F17/00 ,  H01F27/06 ,  H01L21/02

Abstract: An article comprising a micro-machined, passively self-assembling inductor (102) is disclosed. The inductor is fabricated using MEMS technology and advantageously utilizes materials compatible with CMOS such that the inductor is monolithically integrable with a CMOS chip. The inductor includes passive self-assembly means (110, 114) by which the inductor loop (104) is moved away from an underlying substrate (100), typically silicon, in the final steps of inductor assembly. Such passive self-assembly does not require separate actuation or monitoring steps.