公开(公告)号：JP2000150783A

公开(公告)日：2000-05-30

申请号：JP31118199

申请日：1999-11-01

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BELK NATHAN ,  COCHRAN WILLIAM THOMAS ,  TSU-RONG CHU JEROME ,  FREI MICHEL RANJIT ,  GOLDTHORP DAVID ,  LABARRE JOHN D ,  LIN WEN ,  MILLER BLAIR ,  MOINIAN SHAHRIAR ,  NG KWOK K ,  PINTO MARK RICHARD ,  XIE YA-HONG

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: PROBLEM TO BE SOLVED: To improve the Q factor of an inductor in an integrated circuit by forming a buried layer in a substrate, forming a conductive layer on the buried layer, and composing the inductor with the conductive layer and the buried layer. SOLUTION: A low dopant bulk substrate 100 is annealed, and a dopant is moved from a solid dispersion source 102 into the low-dopant bulk substrate 100, thus forming a buried layer 105. After that, a cap layer 104 and the solid dispersion source 102 are eliminated by an etching agent, a low-doped layer 110 is formed, an interlevel dielectric layer 115 is formed on it, and a plurality of conductive layers 120a, 120b, and 120c are provided at the interlevel dielectric layer 115. Further, a conductive layer 130 is formed on it, and an inductor is composed of the conductive layer 130 and the buried layer 105, thus improving the Q factor of the inductor in the integrated circuit.

公开(公告)号：DE69936175T2

公开(公告)日：2008-01-24

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.

公开(公告)号：DE69936175D1

公开(公告)日：2007-07-12

申请号：DE69936175

申请日：1999-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ARCHER VANCE DOLVAN ,  BELK NATHAN ,  CARROLL MICHAEL SCOTT ,  COCHRAN WILLIAM THOMAS ,  DENNIS DONALD C ,  FREI MICHEL RANJIT ,  GREGOR RICHARD WILLIAM ,  LIN WEN ,  MOINIAN SHAHRIAR ,  NAGY WILLIAM JOHN ,  NG KWOK K ,  PINTO MARK RICHARD ,  RICH DAVID ARTHUR ,  XIE YA-HONG ,  GOLDTHORP DAVID CLAYTON

IPC: H01L21/02 ,  H01L21/822 ,  H01L21/77 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08

Abstract: The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.