公开(公告)号：JP2001085645A

公开(公告)日：2001-03-30

申请号：JP2000258447

申请日：2000-08-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MINSEOKK O ,  MERCHANT SAILESH MANSINH ,  ROY PRADIP KUMAR ,  YIU-HUEN WONG

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242

Abstract: PROBLEM TO BE SOLVED: To provide a method for insulating a copper layer in a metal-oxide- metal capacitor without deteriorating a device. SOLUTION: The inventive method comprises a step for forming a first electrode 110 on a semiconductor wafer, a step for forming a layer 120 of tantalum pentoxide on the first electrode 110, a step for forming a first barrier layer 130 on the layer 120 of tantalum pentoxide, and a step for forming a second electrode 140 containing copper on the first barrier layer 130. According to the arrangement, direct contact between copper and tantalum pentoxide is prevented.

公开(公告)号：JPH11289017A

公开(公告)日：1999-10-19

申请号：JP33315098

申请日：1998-11-24

Applicant: LUCENT TECHNOLOGIES INC

Inventor： MA YI ,  MERCHANT SAILESH M ,  MINSEOKK O ,  ROY PRADIP K

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/324 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49

Abstract: PROBLEM TO BE SOLVED: To obtain a CMOS gate structure in which a dopant does not creep at all treatment temperatures, by a method wherein a silicide which is annealed and treated is formed of large particle-size polysilicon of a lower multilayer structure. SOLUTION: After a polysilicon multilayer structure 20 is formed, a silicide layer 22 (WSix ) is deposited. The silicide layer 20 has a thickness of 50 Åor lower. After that, the silicide layer 22 is annealed and treated in an NH3 atmosphere, and the silicide layer 22 is nitrided. The silicide layer 22 functions as an intermediate dopant barrier layer in a final gate stack structure. After that, the second bulk deposition of the silicide layer 22 is performed, and a silicide layer 24 is deposited on the silicide layer 22 which has become the barrier layer. After that, a final annealing treatment is performed, the silicide layer 22 and the silicide layer 24 form a structure similar to the structure of the particle size of the polysilicon multilayer structure 20. Since the particle size is uniform, a dopant does not creep to the structure 20 irrespective of a treatment temperature.