公开(公告)号：GB2358734A

公开(公告)日：2001-08-01

申请号：GB0019969

申请日：2000-08-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GIBSON JR GERALD W ,  LYTLE STEVEN ALAN ,  ROBY MARY DRUMMOND ,  VITKAVAGE DANIEL JOSEPH ,  WOLF THOMAS MICHAEL

IPC: H01L27/00 ,  H01L21/316 ,  H01L21/768 ,  H01L21/822 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04

Abstract: A process for fabricating integrated circuit comprising dielectric structural layer (101) and low dielectric constant (low-k) layer (102) disposed over substrate (100) is disclosed. The low k-layer (102) may exist between conductive elements (103) such as vias and trenches in a dual-damascene structure. The low-k layer (102) may have a dielectric constant below 3.7 and be composed of organic polymers including hybrido organo siloxane polymers, nanoporous silicate glass or organo silicate glass. The structural layer (101) may be composed of silicon dioxide (SiO 2 ) or fluorine doped silicon dioxide (FSG), and have a Young's modulus between 60 and 120 GPa. The low k-layer (102) reduces the overall dielectric constant in the structure and the intralayer or line-to-line capacitance between conductive elements (103). A via may exist in the structural layer, or the structural layer may be disposed directly on a conductive layer.

公开(公告)号：GB2358733A

公开(公告)日：2001-08-01

申请号：GB0019968

申请日：2000-08-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GIBSON JR GERALD W ,  LYTLE STEVEN ALAN ,  ROBY MARY DRUMMOND ,  VITKAVAGE DANIEL JOSEPH ,  WOLF THOMAS MICHAEL

IPC: H01L21/768 ,  H01L21/314 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L27/00

Abstract: An integrated circuit comprises dielectric structural layer (101) and low dielectric constant (low-k) layer (102) disposed over substrate (100). The low k-layer (102) may exist between conductive elements (103) such as vias and trenches in a dual-damascene structure. The low-k layer (102) may have a dielectric constant below 3.7 and be composed of organic polymers including hybrido organo siloxane polymers, nanoporous silicate glass or organo silicate glass. The structural layer (101) may be composed of silicon dioxide (SiO 2 ) or fluorine doped silicon dioxide (FSG), and have a Young's modulus between 60 and 120 GPa. The low k-layer (102) reduces the overall dielectric constant in the structure and the intralayer or line-to-line capacitance between conductive elements (103). A via may exist in the structural layer, or the structural layer may be disposed directly on a conductive layer.