公开(公告)号：CA2349263C

公开(公告)日：2005-01-11

申请号：CA2349263

申请日：2001-05-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： GMACHL CLAIRE F ,  CAPASSO FEDERICO ,  PAIELLA ROBERTO ,  SERGENT ARTHUR MIKE ,  TREDICUCCI ALESSANDRO ,  CHO ALFRED YI ,  SIVCO DEBORAH LEE ,  HUTCHINSON ALBERT LEE ,  BAILLARGEON JAMES NELSON ,  HWANG HAROLD YOONSUNG

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: In a mesa geometry semiconductor laser, a patterned dielectric coating used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

公开(公告)号：CA2349263A1

公开(公告)日：2002-01-07

申请号：CA2349263

申请日：2001-05-29

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HUTCHINSON ALBERT LEE ,  HWANG HAROLD YOONSUNG ,  CHO ALFRED YI ,  BAILLARGEON JAMES NELSON ,  SIVCO DEBORAH LEE ,  GMACHL CLAIRE F ,  PAIELLA ROBERTO ,  SERGENT ARTHUR MIKE ,  TREDICUCCI ALESSANDRO ,  CAPASSO FEDERICO

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: In a mesa geometry semiconductor laser, a patterned dielectric coating used to define the stripe geometry contact on the top the mesa and to provide significant waveguiding comprises a chalcogenide glass. Applications to intersubband (e.g., quantum cascade) lasers are specifically described.

公开(公告)号：DE60102343T2

公开(公告)日：2005-02-17

申请号：DE60102343

申请日：2001-05-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SERGENT ARTHUR MIKE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO ,  WANKE MICHAEL CLEMENT

IPC: H01S5/343 ,  H01S5/34

Abstract: The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.

公开(公告)号：CA2348005C

公开(公告)日：2005-01-11

申请号：CA2348005

申请日：2001-05-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SIVCO DEBORAH LEE ,  SERGENT ARTHUR MIKE ,  CAPASSO FEDERICO ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  CHO ALFRED YI ,  TREDICUCCI ALESSANDRO ,  CHU SUNG-NEE GEORGE ,  WANKE MICHAEL CLEMENT

IPC: H01S5/343 ,  H01S5/34

Abstract: The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that i s divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.

公开(公告)号：DE60102343D1

公开(公告)日：2004-04-22

申请号：DE60102343

申请日：2001-05-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SERGENT ARTHUR MIKE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO ,  WANKE MICHAEL CLEMENT

IPC: H01S5/343 ,  H01S5/34

Abstract: The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.

公开(公告)号：CA2348005A1

公开(公告)日：2002-05-08

申请号：CA2348005

申请日：2001-05-22

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHU SUNG-NEE GEORGE ,  CHO ALFRED YI ,  HUTCHINSON ALBERT LEE ,  GMACHL CLAIRE F ,  WANKE MICHAEL CLEMENT ,  CAPASSO FEDERICO ,  TREDICUCCI ALESSANDRO ,  SERGENT ARTHUR MIKE ,  SIVCO DEBORAH LEE

IPC: H01S5/343 ,  H01S5/34

Abstract: The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that i s divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.