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    MODIFIED QUANTUM CASCADED LASER
    1.
    发明专利
    MODIFIED QUANTUM CASCADED LASER 失效

    公开(公告)号：JP2000012983A

    公开(公告)日：2000-01-14

    申请号：JP16456299

    申请日：1999-06-11

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHI CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To easily transport a large quantity of electrons through the injector of an injector region in each repeated unit having the injector region and an active area by sympathetically vibrating the low energy level of one active region with the high energy level of its downstream-side adjacent active area. SOLUTION: A quantum cascade laser 10 is composed of an InP substrate 11, a lower optically immobilized region 12, a waveguide core region 13, an upper optically immobilized area 14, and upper and lower contacts 15 and 16 with which the laser 10 is electrically brought into contact. The waveguide core region 13 is provided with many similar repeated units and each repeated unit is provided with an injector region and an active region. The injector region is made to sympathetically vibrate the lower energy level in the active region with the high energy level of the active region of its directly adjacent repeated unit on the downstream side under an appropriate electric bias, and the movement of charge carriers is carried out easily by selecting the quantum well layer and/or barrier layer of the injector region.

    DEVICE HAVING SURFACE PLASMON LASER STRUCTURE
    3.
    发明专利
    DEVICE HAVING SURFACE PLASMON LASER STRUCTURE 失效

    公开(公告)号：JP2001291929A

    公开(公告)日：2001-10-19

    申请号：JP2001046367

    申请日：2001-02-22

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  YI CHO ALFRED ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: G01N21/01 ,  G01N21/35 ,  G02B5/18 ,  H01S5/10 ,  H01S5/12 ,  H01S5/187 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To realize a laser of relatively long wavelength, which will not become extremely thick and still not be technically difficult to manufacture, such as like a DFB device. SOLUTION: A surface plasmon laser 10 has an active region 12 formed as an insulation ridge structure, and a metal surface layer 24 disposed in the major axis direction adjacent to the active region 12 along a ridge. According to this structure, surface plasmon propagation is formed, and power loss involved in invasion depth (skin depth) into metal is reduced greatly for a wavelength longer than 15 μm. A long wavelength laser is prepared, by using a large mode confinement in the reduced thickness of a waveguide layer (reduced from the conventional thickness of about 9 μm to 4 μm or smaller) which is obtained accordingly. The metal surface layer 24 has a metal grating (periodical) surface structure and DFB surface plasmon layer, which enables single mode light emission is formed thereby.

    MULTI WAVE LENGTHS QUANTUM CASCADE LIGHT SOURCE
    5.
    发明专利
    MULTI WAVE LENGTHS QUANTUM CASCADE LIGHT SOURCE 失效

    公开(公告)号：JP2000151026A

    公开(公告)日：2000-05-30

    申请号：JP29898099

    申请日：1999-10-21

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L33/00 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To make effective inductive radiation in a plurality of wave lengths by making an energy interval of a central wave length larger than a line spreading energy of the first and the second whichever larger, and by providing a means of preventing buffering of electrons from a fourth level to a third level. SOLUTION: For example, a lower mini band 1 has a first and a second energy levels and an upper mini band 2 has a third and a fourth levels. Light is generated by a first autonomous radioactive ray having a central wave length λ1 and a first line spreading energy caused by an electron transition between the fourth and the first levels. Further, light is generated by a second autonomous radioactive ray having a central wave length λ2 and a second line spreading energy caused by an electron transition between the third and the second levels. An energy interval of the central wave length is larger than a larger line spreading energy of the first and the second and a means of preventing of a buffering of electrons from the fourth level to the third level.

    QUANTUM CASCADE OPTICAL EMITTER HAVING PREBIASED INTERNAL ELECTRON POTENTIAL
    6.
    发明专利
    QUANTUM CASCADE OPTICAL EMITTER HAVING PREBIASED INTERNAL ELECTRON POTENTIAL 失效

    公开(公告)号：JP2000101201A

    公开(公告)日：2000-04-07

    申请号：JP26801999

    申请日：1999-09-22

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To prebias an actual electronic potential by changing an SL cycle so as to make flat band conditions in the upper and lower mini-bands. SOLUTION: A semiconductor optical emitter 10 with a quantum cascade superlattice(QCSL) is provided with an upper clad area 16 and an active area 14 working as a lower clad area between the upper clad area 16 and a substrate 12. An insulation layer 18 is formed on the uppermost area of a device, and an opening is formed to expose a part of the uppermost area of a mesa by patterning. A first electrode 20 is formed in the opening in a manner that it is in contact with the insulation layer 18 and the upper clad area, and a second electrode 22 is formed on the substrate 12. A drive circuit is connected between the electrodes 20 and 22 so as to supply to a laser a pumping energy to generate light. The emitter 10 works as an incoherent natural radiation source at the threshold or less, while it works as a coherent stimulus radiation source at the threshold or more. In the case of the latter, when a feedback is given, the light source functions as a laser.

    ARTICLE FORMED OF IMPROVED SUPERLATTICE QUANTUM CASCADE LASER
    7.
    发明专利
    ARTICLE FORMED OF IMPROVED SUPERLATTICE QUANTUM CASCADE LASER 失效

    公开(公告)号：JPH11340586A

    公开(公告)日：1999-12-10

    申请号：JP12334099

    申请日：1999-04-30

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  FAIST JEROME ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To use a unit which is effective for monitoring contamination by collecting multiple identical repetitive units so as to form a waveguide core area, and constituting the repetitive units of injector areas and superlattice active regions. SOLUTION: A waveguide core region 13 is formed between a substrate/ lower-order optical close region 12 and a higher-order optical close region 14. The waveguide core area 13 is constituted by gathering multiple identical repetitive units. The repetitive units are constituted of injector regions which are injection/relief areas and superlattice active regions selected so that radiative carriers from a higher-order energy level to a lower-order energy level in the superlattice active region can easily be shifted. Thus, the diffusion of the carriers becomes less, an optical loss can be reduced, and the unit can used effectively be for monitoring of contamination.

    8.
    发明专利
    未知

    公开(公告)号：DE69924439T2

    公开(公告)日：2006-02-16

    申请号：DE69924439

    申请日：1999-09-14

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CAPASSO FREDERICO ,  YI CHO ALFRED ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO

    IPC: H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343

    Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

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