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    OPTICAL TIME-DIVISION MULTIPLEXING SYSTEM
    1.
    发明专利
    OPTICAL TIME-DIVISION MULTIPLEXING SYSTEM 失效

    公开(公告)号：JP2000058902A

    公开(公告)日：2000-02-25

    申请号：JP17027999

    申请日：1999-06-16

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： DENK WINFRIED ,  LENZ GADI ,  SHMULOVICH JOSEPH ,  XU CHUNHUI

    IPC: H01L31/10 ,  H04B10/02 ,  H04B10/43 ,  H04J14/08 ,  H04B10/28

    Abstract: PROBLEM TO BE SOLVED: To provide a method in which a time-division multiplexing optical- signal sequence is separated. SOLUTION: In an optical time-division multiplexing system, a waveguide which comprises (m) pieces of electrically insulated photodetectors D1,...Dm is provided, a means 30 by which an optical signal stream containing (m) pieces of interleaved signal sequences is applied to the entrance face of the waveguide is provided, and a means 38 by which optical probe pulses synchronized with the signal stream is applied to the exit face of the waveguide is provided. As a result, the respective probe pulses are overlapped with one set out of different sets of (m) pieces of signals continued inside the waveguide inside the respective photodetectors D1,...Dm, and a nonlinear absorption operation is generated by a two-photon absorption process due to their overlap inside the respective photodetectors D1,...Dm.

    IMAGE FORMING METHOD ON SEMICONDUCTOR DEVICE
    2.
    发明专利
    IMAGE FORMING METHOD ON SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH10332794A

    公开(公告)日：1998-12-18

    申请号：JP13289498

    申请日：1998-05-15

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： DENK WINFRIED ,  XU CHUNHUI

    IPC: G01R31/302 ,  G01R31/311 ,  H01L21/027 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To accurately form an image by using a beam of light having insufficient photon energy (frequency) for exciting electron between a valence photon belt and an electrically conductive belt (energy gap). SOLUTION: A beam of light 23 of wave length of sufficient strength (non- absorbed frequency) which is ordinarily not absorbed to the base board of a semiconductor device 20, but absorbed by two photon absorption, is output from an irradiation source 21. A scanner 22 focuses and scans the light beam 23 on a semiconductor device 20 buried in a body 201 made of plastics through an objective lens 25. Hereby, electrons in the scanning territory are excited from a valence electron belt to an electrically conductive belt, and a charge carrier and current are generated. Then, an image in the scanning territory is formed based on the current generated on the respective beam positions.

    4.
    发明专利
    未知

    公开(公告)号：DE69830946D1

    公开(公告)日：2005-09-01

    申请号：DE69830946

    申请日：1998-05-05

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： DENK WINFRIED ,  XU CHUNHUI

    IPC: G01R31/302 ,  G01R31/311 ,  H01L21/027 ,  H01L21/66

    Abstract: Semiconductor devices are imaged using two-photon absorption. The method is similar to conventional optical beam induced imaging except that the light beams used have frequencies (f2) (photon energies hf2) insufficient to excite electrons across the semiconductor bandgap (30). Rather the instantaneous intensity of the lower frequency light is increased, as by using a pulsed laser source, so that electron transitions occur by two-photon absorption (35,36) predominately in the localized region where the beam is focused. The result is minimal absorption during passage through the substrate and maximal absorption in the component-rich active layer where the beam is focused. This enhances imaging of fine-detail semiconductor devices. Specifically, the quadratic dependence of free carrier generation on the excitation intensity both enhances the resolution and provides a three-dimensional sectioning capability.

    PERFORMANCE MONITORING IN AN OPTICAL COMMUNICATION SYSTEM
    6.
    发明专利
    PERFORMANCE MONITORING IN AN OPTICAL COMMUNICATION SYSTEM 未知

    公开(公告)号：CA2381682A1

    公开(公告)日：2002-11-23

    申请号：CA2381682

    申请日：2002-04-12

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： XU CHUNHUI ,  DINU MIHAELA ,  KNOX WAYNE HARVEY ,  STUART HOWARD ROY ,  GARCIA HERNANDO ,  KILPER DANIEL CHARLES

    IPC: G02F3/00 ,  H04B10/02 ,  H04B10/08 ,  H04B10/20 ,  H04B17/00 ,  H04J14/02

    Abstract: An optical performance monitor (OPM), e.g., for use in an optical network. T he OPM may be configured to characterize one or more impairments in an optical signal modulated with data. The OPM has an optical autocorrelator configured to sample the autocorrelati on function of the optical signal, e.g., using two-photon absorption. Autocorrelation points at various bit delays independently or in combination with average optical power may be used to detect and/or quantify one or more of the following: loss of data modulation, signal contrast, puls e broadening, peak power fluctuations, timing jitter, and deviations from the pseudo-random character of data. In addition, the OPM may be configured to perform Fourier transformation based on the autocorrelation points to obtain corresponding spectral components. The spectral components may be used to detect and/or quantify one or more of chromatic dispersion, polarization mode dispersion, and misalignment of a pulse carver and data modulator. The OPM m ay be further configured to generate feedback, e.g., to network operators to improve netwo rk performance.

    7.
    发明专利
    未知

    公开(公告)号：DE69830946T2

    公开(公告)日：2006-04-20

    申请号：DE69830946

    申请日：1998-05-05

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： DENK WINFRIED ,  XU CHUNHUI

    IPC: G01R31/302 ,  H01L21/66 ,  G01R31/311 ,  H01L21/027

    Abstract: Semiconductor devices are imaged using two-photon absorption. The method is similar to conventional optical beam induced imaging except that the light beams used have frequencies (f2) (photon energies hf2) insufficient to excite electrons across the semiconductor bandgap (30). Rather the instantaneous intensity of the lower frequency light is increased, as by using a pulsed laser source, so that electron transitions occur by two-photon absorption (35,36) predominately in the localized region where the beam is focused. The result is minimal absorption during passage through the substrate and maximal absorption in the component-rich active layer where the beam is focused. This enhances imaging of fine-detail semiconductor devices. Specifically, the quadratic dependence of free carrier generation on the excitation intensity both enhances the resolution and provides a three-dimensional sectioning capability.

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