公开(公告)号：JP2000244041A

公开(公告)日：2000-09-08

申请号：JP2000035786

申请日：2000-02-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN J ,  MUEHLNER DIRK JOACHIM ,  SHMULOVICH JOSEPH

IPC: H01S3/06 ,  G02B6/12 ,  G02B6/122 ,  H01S3/063 ,  H01S3/10

Abstract: PROBLEM TO BE SOLVED: To provide a technology by which a POWA(planar optical waveguide amplifier) is coupled to a waveguide at low loss, to provide a device comprising the POWA connected to the waveguide, and to provide a method for manufacturing such a device. SOLUTION: The planar optical waveguide amplifier comprises a first planar optical waveguide 11 and a second planar optical waveguide 12 contacting to the first planar optical waveguide. The second planar waveguide comprises a planar waveguide doped with a rare earth element, and a first tapered part 13 which connects the electromagnetic radiation of at least one specified wavelength coming from the first planar optical waveguide to the planar waveguide doped with a rare earth element.

公开(公告)号：JP2001042273A

公开(公告)日：2001-02-16

申请号：JP2000214298

申请日：2000-07-14

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN J ,  GLEBOV ALEXEI ,  SHMULOVICH JOSEPH ,  XIE YA-HONG

IPC: G02B6/12 ,  G02F1/01 ,  G02F1/313

Abstract: PROBLEM TO BE SOLVED: To provide a method of controlling the heat flow from a heated waveguide transferred through a substrate. SOLUTION: The optical device which is a waveguide is formed on a silicon substrate 20 and is equipped with a heating element 25 on the waveguide. The waveguide is formed on the region of a porous silicon 15 formed on the silicon substrate. The porous silicon region has higher resistance against the heat flow than that of the silicon substrate on which the device is to be formed. Optionally, the porous silicon region has higher resistance against the heat flow than that of the waveguide.

公开(公告)号：JP2000058902A

公开(公告)日：2000-02-25

申请号：JP17027999

申请日：1999-06-16

Applicant: LUCENT TECHNOLOGIES INC

Inventor： DENK WINFRIED ,  LENZ GADI ,  SHMULOVICH JOSEPH ,  XU CHUNHUI

IPC: H01L31/10 ,  H04B10/02 ,  H04B10/43 ,  H04J14/08 ,  H04B10/28

Abstract: PROBLEM TO BE SOLVED: To provide a method in which a time-division multiplexing optical- signal sequence is separated. SOLUTION: In an optical time-division multiplexing system, a waveguide which comprises (m) pieces of electrically insulated photodetectors D1,...Dm is provided, a means 30 by which an optical signal stream containing (m) pieces of interleaved signal sequences is applied to the entrance face of the waveguide is provided, and a means 38 by which optical probe pulses synchronized with the signal stream is applied to the exit face of the waveguide is provided. As a result, the respective probe pulses are overlapped with one set out of different sets of (m) pieces of signals continued inside the waveguide inside the respective photodetectors D1,...Dm, and a nonlinear absorption operation is generated by a two-photon absorption process due to their overlap inside the respective photodetectors D1,...Dm.

公开(公告)号：JP2001166168A

公开(公告)日：2001-06-22

申请号：JP2000344642

申请日：2000-11-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： XIE YA-HONG ,  SHMULOVICH JOSEPH ,  GLEBOV ALEXEI ,  BRUCE ALLAN J

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical device of a silica base on a silicon substrate. SOLUTION: This optical device has a clad layer formed within the silicon substrate. The optical device has an active region which is formed on the clad layer. The clad layer is formed by forming a region of porous silicon on the silicon substrate. The porous silicon is thereafter oxidized and is made higher in density. The active region of the optical device after the treatment to make the density higher is formed on the clad layer.

公开(公告)号：JPH1041248A

公开(公告)日：1998-02-13

申请号：JP10798997

申请日：1997-04-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPPUZZO MARK ANTHONY ,  KANE CASEY FRANCIS ,  SHMULOVICH JOSEPH

IPC: H01L21/28 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To form a pattern adequately defined on the surface of a semiconductor wafer having grooves by the lithography. SOLUTION: A multilayer metal cover structure 18 is formed on an upper nonplanar surface of a semiconductor wafer 10 by a sequence of specified vacuum evaporation/etching process. By an electrophoretic vacuum evaporation step a resist material layer of an analogously uniform thickness is formed on the upper surface of this structure 18 and patterned by the lithography to form an etching mask to define the layout in the structure 18 of a lower layer.

公开(公告)号：JP2001267664A

公开(公告)日：2001-09-28

申请号：JP2001035271

申请日：2001-02-13

Applicant: LUCENT TECHNOLOGIES INC

Inventor： SHMULOVICH JOSEPH ,  BRENER IGAL M ,  LENZ GADI

IPC: G02B6/122 ,  G02F1/365 ,  H01S3/06 ,  H01S3/063 ,  H01S3/067 ,  H01S3/094

Abstract: PROBLEM TO BE SOLVED: To provide a waveguide structure equipped with a pump laser maintaining fixed pump power density. SOLUTION: This waveguide structure includes an Er dope waveguide amplifier and a non-linear waveguide wavelength converter device or an optical fiber. The waveguide structure is provided with a waveguide area formed like a taper shape across a pump propagating distance. This pump propagating distance is set as a prescribed distance between a first pump sit and a second pump site, and pump lights are allowed to propagate for amplifying or converting a signal across the distance between those pump sites. The taper can reduce the depletion of the pump power, and maintain pump power density to be almost fixed across the pump propagating length. Thus, it is possible to reduce the depletion of the pump.

公开(公告)号：CA2323683A1

公开(公告)日：2001-05-30

申请号：CA2323683

申请日：2000-10-18

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN JAMES ,  GLEBOV ALEXEI ,  SHMULOVICH JOSEPH ,  XIE YA-HONG

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/13

Abstract: A process for fabricating a silica-based optical device on a silicon substrate is disclosed. The device has a cladding formed in a silicon substrate. The device also has an active region, and that active region is formed on the cladding. The cladding is fabricated by forming a region of porous silicon in the silicon substrate. The porous silicon is then oxidized and densified. After densification, the active region of the device is formed on the cladding.

公开(公告)号：CA2323683C

公开(公告)日：2006-06-06

申请号：CA2323683

申请日：2000-10-18

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BRUCE ALLAN JAMES ,  SHMULOVICH JOSEPH ,  XIE YA-HONG ,  GLEBOV ALEXEI

IPC: G02B6/13 ,  G02B6/12 ,  G02B6/122

Abstract: A process for fabricating a silica-based optical device on a silicon substra te is disclosed. The device has a cladding formed in a silicon substrate. The devi ce also has an active region, and that active region is formed on the cladding. The cladding is fabricated by forming a region of porous silicon in the silicon substrate . The porous silicon is then oxidized and densified. After densification, the acti ve region of the device is formed on the cladding.

公开(公告)号：EP0803905A3

公开(公告)日：1997-12-29

申请号：EP97302564

申请日：1997-04-15

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPPUZZO MARK ANTHONY ,  SHMULOVICH JOSEPH ,  KANE CASEY FRANCIS

IPC: H01L21/28 ,  H01L21/027 ,  H01L21/312 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/76838 ,  H01L21/0273 ,  H01L21/312

Abstract: In accordance with a specific deposition/etching sequence, a multi-layer metallization system is formed on the non-planar top surface of a semiconductor wafer. In an electrophoretic deposition step, a conformal uniform-thickness layer of a resist material is then formed on the top surface of the metallization system. In turn, the layer of resist material is lithographically patterned to provide an etch-mask for defining features in the underlying metallization system.