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    Electronic odor sensor
    1.
    发明公开
    Electronic odor sensor 有权
    Elektronischer Geruchssensor

    公开(公告)号：EP1235070A1

    公开(公告)日：2002-08-28

    申请号：EP01307701.1

    申请日：2001-09-11

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Bao, Zhenan ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Gelperin, Alan ,  Katz, Howard Edan

    IPC: G01N33/00 ,  G01N27/414

    CPC classification number: G01N33/0031 ,  G01N27/4148 ,  G01N33/0047

    Abstract: An electronic odor sensor includes first and second amplifiers (42 1 to 42 N ), a biasing network (52 1 to 52 N ), and a device (56) connected to receive the output signals from the first and second amplifiers. The device (56) is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers (53 1 to 53 N ) and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

    Abstract translation: 电子气味传感器包括第一和第二放大器（421至42N），偏置网络（521至52N）以及连接以接收来自第一和第二放大器的输出信号的设备（56）。 设备（56）被配置为将接收到的输出信号与气味的存在或不存在相关。 第一和第二放大器具有相应的第一和第二有机半导体层（531至53N），并且被配置为产生响应于其各自的有机半导体层的电导率的输出信号。 有机半导体层的电导率响应于施加到相关放大器的电压和气味的存在。 偏置网络将电压施加到放大器。

    Thin film transistors
    3.
    发明公开
    Thin film transistors 有权
    HerstellungsmethodefürElektroden vonDünnfilmtransistoren

    公开(公告)号：EP1104035A2

    公开(公告)日：2001-05-30

    申请号：EP00310305.8

    申请日：2000-11-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Chandross, Edwin Arthur ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Filas, Robert William

    IPC: H01L51/20

    CPC classification number: H01L51/0545 ,  H01L21/288 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/105

    Abstract: The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni-P on a base conductor, preferably TiN x , by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

    Abstract translation: 该规范描述了与薄膜晶体管集成电路中的有机半导体兼容的源极/漏极接触材料。 接触材料是镍/金，其中镍通过无电镀而作为Ni-P电镀在基底导体上，优选为TiN x上，并且通过置换电镀沉积金覆层。 发现意外地，以这种方式形成Ni / Au触点基本上延长了TFT器件的寿命。

    Thin film transistors
    4.
    发明公开
    Thin film transistors 有权
    Dünnfilmtransistor

    公开(公告)号：EP1104035A3

    公开(公告)日：2005-04-13

    申请号：EP00310305.8

    申请日：2000-11-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Chandross, Edwin Arthur ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Filas, Robert William

    IPC: H01L51/20

    CPC classification number: H01L51/0545 ,  H01L21/288 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/105

    Abstract: The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni-P on a base conductor, preferably TiN x , by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

    Abstract translation: 该规范描述了与薄膜晶体管集成电路中的有机半导体兼容的源极/漏极接触材料。 接触材料是镍/金，其中镍通过无电镀而作为Ni-P电镀在基底导体上，优选为TiN x上，并且通过置换电镀沉积金覆层。 发现意外地，以这种方式形成Ni / Au触点基本上延长了TFT器件的寿命。

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