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    Thin film transistors
    1.
    发明公开
    Thin film transistors 有权
    HerstellungsmethodefürElektroden vonDünnfilmtransistoren

    公开(公告)号：EP1104035A2

    公开(公告)日：2001-05-30

    申请号：EP00310305.8

    申请日：2000-11-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Chandross, Edwin Arthur ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Filas, Robert William

    IPC: H01L51/20

    CPC classification number: H01L51/0545 ,  H01L21/288 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/105

    Abstract: The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni-P on a base conductor, preferably TiN x , by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

    Abstract translation: 该规范描述了与薄膜晶体管集成电路中的有机半导体兼容的源极/漏极接触材料。 接触材料是镍/金，其中镍通过无电镀而作为Ni-P电镀在基底导体上，优选为TiN x上，并且通过置换电镀沉积金覆层。 发现意外地，以这种方式形成Ni / Au触点基本上延长了TFT器件的寿命。

    Electronic odor sensor
    4.
    发明公开
    Electronic odor sensor 有权
    Elektronischer Geruchssensor

    公开(公告)号：EP1235070A1

    公开(公告)日：2002-08-28

    申请号：EP01307701.1

    申请日：2001-09-11

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Bao, Zhenan ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Gelperin, Alan ,  Katz, Howard Edan

    IPC: G01N33/00 ,  G01N27/414

    CPC classification number: G01N33/0031 ,  G01N27/4148 ,  G01N33/0047

    Abstract: An electronic odor sensor includes first and second amplifiers (42 1 to 42 N ), a biasing network (52 1 to 52 N ), and a device (56) connected to receive the output signals from the first and second amplifiers. The device (56) is configured to correlate the received output signals to the presence or absence of an odor. The first and second amplifiers have respective first and second organic semiconductor layers (53 1 to 53 N ) and are configured to produce output signals responsive to the conductivities of their respective organic semiconductor layers. The conductivities of the organic semiconductor layers are responsive to voltages applied to associated ones of the amplifiers and to the presence of the odor. The biasing network applies the voltages to the amplifiers.

    Abstract translation: 电子气味传感器包括第一和第二放大器（421至42N），偏置网络（521至52N）以及连接以接收来自第一和第二放大器的输出信号的设备（56）。 设备（56）被配置为将接收到的输出信号与气味的存在或不存在相关。 第一和第二放大器具有相应的第一和第二有机半导体层（531至53N），并且被配置为产生响应于其各自的有机半导体层的电导率的输出信号。 有机半导体层的电导率响应于施加到相关放大器的电压和气味的存在。 偏置网络将电压施加到放大器。

    Optical devices comprising polymer-dispersed crystalline materials
    6.
    发明公开
    Optical devices comprising polymer-dispersed crystalline materials 审中-公开
    Optische Vorrichtungen，die polymerdispergierte kristalline Materialien enthalten

    公开(公告)号：EP0918245A1

    公开(公告)日：1999-05-26

    申请号：EP98309183.6

    申请日：1998-11-10

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Berggren, Magnus ,  Dodabalapur, Ananth ,  Steigerwald, Michael Louis

    IPC: G02F1/015 ,  G02F1/025

    CPC classification number: B82Y20/00 ,  G02F1/017 ,  G02F1/01708 ,  G02F2001/0153 ,  G02F2001/0157 ,  G02F2001/01791

    Abstract: Optical modulators and switches for use in telecommunications systems are disclosed having solid-state crystalline optical material comprised of III-V, II-VI, and IV semiconductor nanocrystals embedded in a polymer matrix. In a preferred embodiment, the crystalline material comprises CdSe crystals sized at less than 5.8 nm in diameter and more preferably at less than about 4 nm in diameter and advantageously embedded in poly(vinyl pyridine). The crystalline material sandwiched between two electrodes defines an optical modulator. In one preferred embodiment, the crystalline material with ten-percent crystal embedded in a polymer will exhibit with an applied voltage of 100V, a differential absorbance spectra (ΔA) of about 50 cm -1 at wavelengths of about 610 nm and a differential refractive index (Δn) of about 10 -4 at wavelengths of about 625 nm.

    Abstract translation: 公开了用于电信系统的光调制器和开关，其具有由嵌入在聚合物基体中的III-V，II-VI和IV半导体纳米晶体组成的固态晶体光学材料。 在优选的实施方案中，结晶材料包含直径小于5.8nm，更优选直径小于约4nm的CdSe晶体，并且有利地嵌入在聚（乙烯基吡啶）中。 夹在两个电极之间的结晶材料限定了光学调制器。 在一个优选实施方案中，具有嵌入聚合物中的10％晶体的结晶材料将以100V的施加电压显示出约610cm波长的约50cm -1的差示吸收光谱（DELTA A） 在约625nm的波长处的约10 -4的差示折射率（DELTA n）。

    Thin film transistors
    8.
    发明公开
    Thin film transistors 审中-公开
    Dünnschichttransistoren

    公开(公告)号：EP0981165A1

    公开(公告)日：2000-02-23

    申请号：EP99306305.6

    申请日：1999-08-10

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Dodabalapur, Ananth

    IPC: H01L27/12 ,  H01L21/84 ,  H01L27/00 ,  H01L51/20 ,  H01L51/30 ,  H01L21/74

    CPC classification number: H01L27/1218 ,  H01L21/743 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/283 ,  H01L29/78681 ,  H01L51/0036 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0508 ,  H01L51/0516 ,  H01L51/0541 ,  Y10S438/928

    Abstract: The specification describes thin film transistor integrated circuits wherein the TFT devices are field effect transistors with inverted structures. The interconnect levels are produced prior to the formation of the transistors. This structure leads to added flexibility in processing. The inverted structure is a result of removing the constraints in traditional semiconductor field effect device manufacture that are imposed by the necessity of starting the device fabrication with the single crystal semiconductor active material. In the inverted structure the active material, preferably an organic semiconductor, is formed last in the fabrication sequence.

    Abstract translation: 该说明书描述了薄膜晶体管集成电路，其中TFT器件是具有倒置结构的场效应晶体管。 互连电平在形成晶体管之前产生。 这种结构导致加工的灵活性增加。 反转结构是消除传统半导体场效应器件制造中由于采用单晶半导体活性材料开始器件制造的必要性而施加的约束的结果。 在倒置结构中，最终在制造顺序中形成活性材料，优选有机半导体。

    Blue-emitting materials and electroluminescent devices containing these materials
    9.
    发明公开
    Blue-emitting materials and electroluminescent devices containing these materials 失效
    蓝色发光材料和含有这些材料的电致发光器件

    公开(公告)号：EP0763965A3

    公开(公告)日：1997-06-11

    申请号：EP96306381.3

    申请日：1996-09-03

    Applicant: Lucent Technologies Inc.

    Inventor： Dodabalapur, Ananth ,  Strukelj, Marko ,  Jordan, Rebecca

    IPC: H05B33/14 ,  C09K11/06

    CPC classification number: H05B33/14 ,  C09K11/06 ,  H01L51/0067 ,  H01L51/0069 ,  H01L51/0081 ,  H01L51/5012 ,  Y02B20/181 ,  Y10S428/917 ,  Y10T428/26 ,  Y10T428/31678

    Abstract: The present invention is directed to a class of blue emitting materials, that, when placed in EL devices with an emitter layer and a hole transporter layer, provide EL devices that emit white light. The blue-emitting material has a non-polymeric molecular structure that comprises a five or six-membered heterocyclic moiety selected from the groups consisting of oxazole, imidazole, quinoline and pyrazine with at least three organic substituents pendant thereto. The blue-emitting materials of the present invention have certain characteristics that allow them to be formed into films with advantageous properties. The films formed from these materials are amorphous (i.e they have a crystal size less than about 1000 Å). The thickness of the films of the blue-emitting material is less than 600 Å in the devices of the present invention.

    Abstract translation: 本发明涉及一类蓝色发光材料，当放置在具有发射极层和空穴传输层的EL器件中时，提供发射白光的EL器件。 蓝色发射材料具有非聚合物分子结构，其包含选自由恶唑，咪唑，喹啉和吡嗪组成的组的五或六元杂环部分，其中至少三个有机取代基侧接于其上。 本发明的蓝色发光材料具有某些特征，使它们能够形成具有有利特性的薄膜。 由这些材料形成的膜是无定形的（即，它们具有小于约的晶体尺寸）。 在本发明的器件中，蓝色发射材料的膜的厚度小于600。

    Thin film transistors
    10.
    发明公开
    Thin film transistors 有权
    Dünnfilmtransistor

    公开(公告)号：EP1104035A3

    公开(公告)日：2005-04-13

    申请号：EP00310305.8

    申请日：2000-11-20

    Applicant: LUCENT TECHNOLOGIES INC.

    Inventor： Chandross, Edwin Arthur ,  Crone, Brian Keith ,  Dodabalapur, Ananth ,  Filas, Robert William

    IPC: H01L51/20

    CPC classification number: H01L51/0545 ,  H01L21/288 ,  H01L27/283 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/105

    Abstract: The specification describes source/drain contact material that is compatible with organic semiconductors in thin film transistor integrated circuits. The contact material is nickel/gold wherein the nickel is plated as Ni-P on a base conductor, preferably TiN x , by electroless plating, and the gold overlay is deposited by displacement plating. It was found, unexpectedly, that forming Ni/Au contacts in this way extends the lifetime of TFT devices substantially.

    Abstract translation: 该规范描述了与薄膜晶体管集成电路中的有机半导体兼容的源极/漏极接触材料。 接触材料是镍/金，其中镍通过无电镀而作为Ni-P电镀在基底导体上，优选为TiN x上，并且通过置换电镀沉积金覆层。 发现意外地，以这种方式形成Ni / Au触点基本上延长了TFT器件的寿命。

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