公开(公告)号：EP0878841A3

公开(公告)日：2000-02-23

申请号：EP98303500.7

申请日：1998-05-05

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Denk, Winfried ,  Xu, Chunhui

IPC: H01L21/66 ,  G01R31/311

CPC classification number: H01L22/12 ,  G01R31/311

Abstract: Semiconductor devices are imaged using two-photon absorption. The method is similar to conventional optical beam induced imaging except that the light beams used have frequencies (f 2 ) (photon energies hf 2 ) insufficient to excite electrons across the semiconductor bandgap (30). Rather the instantaneous intensity of the lower frequency light is increased, as by using a pulsed laser source, so that electron transitions occur by two-photon absorption (35,36) predominately in the localized region where the beam is focused. The result is minimal absorption during passage through the substrate and maximal absorption in the component-rich active layer where the beam is focused. This enhances imaging of fine-detail semiconductor devices. Specifically, the quadratic dependence of free carrier generation on the excitation intensity both enhances the resolution and provides a three-dimensional sectioning capability.

公开(公告)号：EP0878244B1

公开(公告)日：2003-08-27

申请号：EP98303487.7

申请日：1998-05-05

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Aksyuk, Vladimir A. ,  Denk, Winfried ,  Bishop, David J. ,  Tank, David W.

IPC: B05C5/02 ,  B05C11/10 ,  B01L3/02

CPC classification number: B01L3/0262 ,  B05C5/02 ,  B05C11/105 ,  Y10T29/49105 ,  Y10T29/49204 ,  Y10T29/4921 ,  Y10T29/49885

公开(公告)号：EP0878244A3

公开(公告)日：1999-04-14

申请号：EP98303487.7

申请日：1998-05-05

Applicant: Lucent Technologies Inc.

Inventor： Aksyuk, Vladimir A. ,  Denk, Winfried ,  Bishop, David J. ,  Tank, David W.

IPC: B05C5/02

CPC classification number: B01L3/0262 ,  B05C5/02 ,  B05C11/105 ,  Y10T29/49105 ,  Y10T29/49204 ,  Y10T29/4921 ,  Y10T29/49885

Abstract: A method for forming micron-sized or smaller drops of liquid, and the use of the method in fabricating micro electro mechanical and micro mechanical devices is disclosed. A micropipette (4) is formed having an inside diameter no larger than the size of the drops to be formed. The micropipette is connected to a system (14) capable of developing a positive and optionally negative pressure within the micropipette. The tip of the micropipette is placed in liquid. The liquid is drawn into the micropipette via capillary action or from the negative pressure developed by the system. The micropipette is then positioned to deliver liquid to an intended location on a surface. To deliver the liquid, a positive pressure is developed within the micropipette (4). The positive pressure forces a micron-sized or smaller drop of liquid out of the micropipette. The method can be used to form micron-sized or smaller drops of adhesive for fixing in place various structural members that form microdevices.

公开(公告)号：EP0878244A2

公开(公告)日：1998-11-18

申请号：EP98303487.7

申请日：1998-05-05

Applicant: Lucent Technologies Inc.

Inventor： Aksyuk, Vladimir A. ,  Denk, Winfried ,  Bishop, David J. ,  Tank, David W.

IPC: B05C5/02

CPC classification number: B01L3/0262 ,  B05C5/02 ,  B05C11/105 ,  Y10T29/49105 ,  Y10T29/49204 ,  Y10T29/4921 ,  Y10T29/49885

Abstract: A method for forming micron-sized or smaller drops of liquid, and the use of the method in fabricating micro electro mechanical and micro mechanical devices is disclosed. A micropipette (4) is formed having an inside diameter no larger than the size of the drops to be formed. The micropipette is connected to a system (14) capable of developing a positive and optionally negative pressure within the micropipette. The tip of the micropipette is placed in liquid. The liquid is drawn into the micropipette via capillary action or from the negative pressure developed by the system. The micropipette is then positioned to deliver liquid to an intended location on a surface. To deliver the liquid, a positive pressure is developed within the micropipette (4). The positive pressure forces a micron-sized or smaller drop of liquid out of the micropipette. The method can be used to form micron-sized or smaller drops of adhesive for fixing in place various structural members that form microdevices.

Abstract translation: 公开了一种用于形成微米级或更小液滴的方法，以及在制造微机电和微机械装置中使用该方法。 形成具有不大于要形成的液滴的尺寸的内径的微量移液管（4）。 微量移液管连接到能够在微量移液管内形成正的和可选的负压的系统（14）。 微量吸头的尖端放置在液体中。 液体通过毛细管作用或由系统产生的负压吸入微量吸移管。 然后将微量移液器定位成将液体输送到表面上的预期位置。 为了输送液体，在微量移液管（4）内产生正压力。 正压迫使微米尺寸或更小的液体滴出微量移液管。 该方法可用于形成用于固定各种形成微型装置的结构构件的微米级或更小的粘合剂滴。

公开(公告)号：EP0878841B1

公开(公告)日：2005-07-27

申请号：EP98303500.7

申请日：1998-05-05

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Denk, Winfried ,  Xu, Chunhui

IPC: H01L21/66 ,  G01R31/311

CPC classification number: H01L22/12 ,  G01R31/311

公开(公告)号：EP0971500A2

公开(公告)日：2000-01-12

申请号：EP99304472.6

申请日：1999-06-08

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Denk, Winfried ,  Lenz, Gadi ,  Shmulovich, Joseph ,  Xu, Chunhui

IPC: H04J14/08

CPC classification number: H04J14/08

Abstract: In a time-division-multiplex system, a relatively high-rate optical signal stream comprising multiple interleaved signal sequences is applied to one end of an elongated waveguide that includes multiple photodetectors disposed along the longitudinal extent of the waveguide. Probe pulses at a relatively low rate are applied to the other end of the waveguide in a synchronized fashion to cause two-photon non-linear absorption in successive respective photodetectors as each propagating probe pulse overlaps successive different signals of each sequence. In that way, electrical output signals are provided from each photodetector at the relatively low probe-pulse rate.

Abstract translation: 在时分复用系统中，将包括多个交错信号序列的相对高速率的光信号流施加到细长波导的一端，该波长包括沿着波导的纵向延伸部布置的多个光电探测器。 以相对较低的速率的探针脉冲以同步方式施加到波导的另一端，以在连续的各个光电检测器中引起双光子非线性吸收，因为每个传播的探针脉冲与每个序列的连续的不同信号重叠。 以这种方式，以相对低的探针脉冲速率从每个光电检测器提供电输出信号。

公开(公告)号：EP0971500A3

公开(公告)日：2005-12-07

申请号：EP99304472.6

申请日：1999-06-08

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Denk, Winfried ,  Lenz, Gadi ,  Shmulovich, Joseph ,  Xu, Chunhui

IPC: H04J14/08 ,  G02F1/35

CPC classification number: H04J14/08

Abstract: In a time-division-multiplex system, a relatively high-rate optical signal stream comprising multiple interleaved signal sequences is applied to one end of an elongated waveguide that includes multiple photodetectors disposed along the longitudinal extent of the waveguide. Probe pulses at a relatively low rate are applied to the other end of the waveguide in a synchronized fashion to cause two-photon non-linear absorption in successive respective photodetectors as each propagating probe pulse overlaps successive different signals of each sequence. In that way, electrical output signals are provided from each photodetector at the relatively low probe-pulse rate.

公开(公告)号：EP0878841A2

公开(公告)日：1998-11-18

申请号：EP98303500.7

申请日：1998-05-05

Applicant: LUCENT TECHNOLOGIES INC.

Inventor： Denk, Winfried ,  Xu, Chunhui

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01R31/311

Abstract: Semiconductor devices are imaged using two-photon absorption. The method is similar to conventional optical beam induced imaging except that the light beams used have frequencies (f 2 ) (photon energies hf 2 ) insufficient to excite electrons across the semiconductor bandgap (30). Rather the instantaneous intensity of the lower frequency light is increased, as by using a pulsed laser source, so that electron transitions occur by two-photon absorption (35,36) predominately in the localized region where the beam is focused. The result is minimal absorption during passage through the substrate and maximal absorption in the component-rich active layer where the beam is focused. This enhances imaging of fine-detail semiconductor devices. Specifically, the quadratic dependence of free carrier generation on the excitation intensity both enhances the resolution and provides a three-dimensional sectioning capability.

Abstract translation: 使用双光子吸收成像半导体器件。 除了使用的光束具有不足以激发穿过半导体带隙（30）的电子的频率（f2）（光子能量hf2）之外，该方法类似于常规的光束诱导成像。 相反，通过使用脉冲激光源，较低频率的光的瞬时强度增加，使得电子跃迁通过双光子吸收（35,36）主要在束聚焦的局部区域中发生。 结果是通过衬底的最小吸收和在束聚焦的富含部件的有源层中的最大吸收。 这增强了精细细节半导体器件的成像。 具体地说，自由载流子产生对激发强度的二次依赖性增强了分辨率并提供了三维切片能力。