公开(公告)号：US3909317A

公开(公告)日：1975-09-30

申请号：US38365373

申请日：1973-07-30

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  C30B19/064 ,  C30B19/10 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/006 ,  Y10S148/025 ,  Y10S148/107 ,  Y10S438/916

Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

Abstract translation: 在诸如通过液相外延生长形成的半导体激光器件的多层半导体器件的制造中，提供以下改进，即，通过使半导体衬底接触第一半导体溶液形成第一外延生长层之后，以及 在通过使所述第一层与第二半导体溶液接触来形成第二外延生长层之前，使所述第一层与第三半导体溶液或液态金属接触，由此在形成在第二半导体溶液之间的结处附近的杂质浓度的斜率 第一层和第二层可以令人满意地陡峭，从而获得良好的性能。

公开(公告)号：DE2409016A1

公开(公告)日：1974-09-05

申请号：DE2409016

申请日：1974-02-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: H01L33/00 ,  H01S5/323 ,  H01S3/18

公开(公告)号：GB2265755B

公开(公告)日：1995-11-08

申请号：GB9306749

申请日：1993-03-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAITO HIROKI ,  KUME MASAHIRO ,  SUGIURA HIDEYUKI ,  TAKAYAMA TORU ,  ITOH KUNIO ,  OHTA ISSEI ,  SHIMIZU HIROKAZU

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/025

Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga1-Y1AlY1As first light guide layer, a Ga1-Y2AlY2As second light guide layer of said certain conduction type, or an In0.5Ga0.5P or an In0.5(GaAl)0.5P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga1-ZAlZAs current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga1-Y3AlY3As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.

公开(公告)号：CA1015051A

公开(公告)日：1977-08-02

申请号：CA193328

申请日：1974-02-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: H01L33/00 ,  H01S5/323

公开(公告)号：CA1009738A

公开(公告)日：1977-05-03

申请号：CA195291

申请日：1974-03-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: H01L33/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

公开(公告)号：DE2413493A1

公开(公告)日：1974-10-03

申请号：DE2413493

申请日：1974-03-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: H01L33/00 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01S3/05 ,  H01S3/18

公开(公告)号：CA987795A

公开(公告)日：1976-04-20

申请号：CA177297

申请日：1973-07-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： ITOH KUNIO ,  INOUE MORIO

IPC: C30B19/06 ,  C30B19/10 ,  H01L21/208

Abstract: In the manufacturing of a multiple layer semiconductor device, such as semiconductor laser device formed by liquid phase epitaxial growth, the following improvement is offered, that is, after forming a first epitaxial growth layer by making a semiconductor substrate contact a first semiconductor solution, and prior to forming a second epitaxial growth layer by letting said first layer contact with a second semiconductor solution, said first layer is made to contact a third semiconductor solution or liquid metal, whereby the slope of impurity concentration in the vicinity of a junction formed between the first and the second layer can be satisfactorily steepened thereby attaining a good performance.

公开(公告)号：GB2265755A

公开(公告)日：1993-10-06

申请号：GB9306749

申请日：1993-03-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NAITO HIROKI ,  KUME MASAHIRO ,  SUGIURA HIDEYUKI ,  TAKAYAMA TORU ,  ITOH KUNIO ,  OHTA ISSEI ,  SHIMIZU HIROKAZU

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc comprises a particular conduction type Ga1-Y1AlY1As first light guide layer 5, a Ga1-Y2AlY2As second light guide layer 6 of said conduction type, or an In0.5Ga0.5P or an In0.5(GaAl)0.5P or an InGaAsP second light guide layer 6, successively formed one upon another at least on one side of the principal plane of an active layer 4; an opposite conduction type Ga1-ZAlZAs current blocking layer 7 formed on the second light guide layer 6 and provided with a stripe-like window 7A; and a Ga1-Y3AlY3As cladding layer 9 of the same conduction type as said light guide layers 5, 6 formed on said stripe-like window 7a, wherein relations of Z > Y3 > Y2 and YI > Y2 are established among Y1, Y2, Y3 and Z that define the AlAs mole-fractions. The first guide layer may comprise a multi-quantum barrier structure.