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公开(公告)号：GB2265755B
公开(公告)日：1995-11-08
申请号：GB9306749
申请日：1993-03-31
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAITO HIROKI , KUME MASAHIRO , SUGIURA HIDEYUKI , TAKAYAMA TORU , ITOH KUNIO , OHTA ISSEI , SHIMIZU HIROKAZU
Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga1-Y1AlY1As first light guide layer, a Ga1-Y2AlY2As second light guide layer of said certain conduction type, or an In0.5Ga0.5P or an In0.5(GaAl)0.5P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga1-ZAlZAs current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga1-Y3AlY3As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.
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公开(公告)号：GB2265755A
公开(公告)日：1993-10-06
申请号：GB9306749
申请日：1993-03-31
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAITO HIROKI , KUME MASAHIRO , SUGIURA HIDEYUKI , TAKAYAMA TORU , ITOH KUNIO , OHTA ISSEI , SHIMIZU HIROKAZU
Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc comprises a particular conduction type Ga1-Y1AlY1As first light guide layer 5, a Ga1-Y2AlY2As second light guide layer 6 of said conduction type, or an In0.5Ga0.5P or an In0.5(GaAl)0.5P or an InGaAsP second light guide layer 6, successively formed one upon another at least on one side of the principal plane of an active layer 4; an opposite conduction type Ga1-ZAlZAs current blocking layer 7 formed on the second light guide layer 6 and provided with a stripe-like window 7A; and a Ga1-Y3AlY3As cladding layer 9 of the same conduction type as said light guide layers 5, 6 formed on said stripe-like window 7a, wherein relations of Z > Y3 > Y2 and YI > Y2 are established among Y1, Y2, Y3 and Z that define the AlAs mole-fractions. The first guide layer may comprise a multi-quantum barrier structure.
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公开(公告)号：JPH09205253A
公开(公告)日：1997-08-05
申请号：JP1145996
申请日：1996-01-26
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , KONDO OSAMU , YOSHIKAWA AKIO , NAKANISHI HIDEYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device for controlling the level of light output even at a low light output by improving the nonlinearity in current-light output characteristics at a low light output. SOLUTION: An n-type buffer layer 102, an n-type first light guide layer 103, an active layer 104, a p-type second light guide layer 105, and a p-type light absorption layer 106 are successively formed on an n-type semiconductor substrate 101. A p-type stripe region 107 is formed at a center part on the light absorption layer 106 and at the same time an n-type current block layer 108 is formed at both sides of the stripe region 107. A p-type third light guide layer 109 is formed on the stripe region 107 and the current block layer 108. The film thickness of the light absorption layer 106 is set to at least 5nm and equal to or less than 1/5 of the film thickness of the active layer 104 and at the same time the total film thickness of the second light guide layer 105 and the light absorption layer 106 is set to 0.3μm or less.
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公开(公告)号：JPH098414A
公开(公告)日：1997-01-10
申请号：JP19005495
申请日：1995-07-26
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , KONDO OSAMU , KUME MASAHIRO , YOSHIKAWA AKIO , NAITO HIROKI
IPC: H01L21/205 , H01L21/203 , H01S5/00 , H01S5/065 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device having a small astigmatic difference, low noise and the stabilized lateral mode from the low output to the high output. SOLUTION: On an N-type GaAs semiconductor board 1, an N-type GaAs buffer layer 2, an N-type Ga0.45 Al0.55 As first clad layer 3, a Ga0.85 Al0.15 As active layer 4, a P-type Ga0.45 Al0.55 As first light guiding layer 5, and a P-type Ga0.8 Al0.2 As second light guiding layer 6 are formed. On the second light guiding layer 6, a P-type Ga0.45 Al0.55 As stripe region 7a is formed, and an N-type Ga0.3 Al0.7 As current blocking layer 7 is formed on both sides of the stripe region 7a. A P-type Ga0.45 Al0.55 As second clad layer 8 is formed on the stripe region 7a and the current blocking layer 7, and a P-type GaAs contact layer 9 is formed on the second clad layer 8.
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公开(公告)号：JPH07318996A
公开(公告)日：1995-12-08
申请号：JP1771895
申请日：1995-02-06
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAGAI HIDEO , TAKAYAMA TORU , KUME MASAHIRO , YOSHIKAWA AKIO
Abstract: PURPOSE:To provide such a wavelength conversion waveguide type laser device which does not increase the oscillation threshold current of a semiconductor laser beam source and does not degrade differentiation efficiency. CONSTITUTION:A semiconductor laser 10 oscillates a semiconductor laser beam of a TM mode. The semiconductor laser beam is collimated to parallel light beams by a first collimating lens 11 and thereafter, these collimated light beams are transmitted through a Brewster plate 12 arranged in such a manner that the P polarization direction of the Brewster plane aligns to the polarization direction of the semiconductor laser beam. The parallel light beams are then coupled to the incident surface of a wavelength conversion waveguide 14 by a focusing lens 13. While the semiconductor laser beam passes the wavelength conversion waveguide 14, the laser beam is converted to a second higher harmonic beam by a polarization inversion region 16. The semiconductor laser beam emitted from the exit face of the wavelength conversion waveguide 14 is reflected to a diffraction grating 19 by an output mirror 18 and is subjected to wavelength adjustment by the diffraction grating 19. The second higher harmonic beam emitted from the exit face of the wavelength conversion waveguide 14 is outputted from an output mirror 18.
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Patent Agency Ranking
公开(公告)号：JPH10190126A
公开(公告)日：1998-07-21
申请号：JP34695196
申请日：1996-12-26
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , KONDO OSAMU , YURI MASAAKI , YOSHIKAWA AKIO
Abstract: PROBLEM TO BE SOLVED: To prevent a semiconductor laser device which has a small oscillation threshold current value and a small operating current value, can prevent the deterioration of its temperature characteristic, and does not produce high noise. SOLUTION: A semiconductor laser is constituted by successively forming a first light guide layer 5 composed of InV1 (Ga1- Y1 AlY1 )1- V1 P of a first conductivity, a second light guide layer 6 composed of Ga1- Y2 AlY2 As of the first conductivity, a current blocking layer 7 which has a current passing window 7a and is composed of Ga1- ZAlZAs of a second conductivity, and a third light guide layer 8 which is composed of Ga1- Y3 AlY3 As of the first conductivity and fills up the current passing window 7a of the current blocking layer 7 on an active layer 4 composed of InV(Ga1- XAlX)1- VP, where V, V1, X, Y1, Y2, Y3, and Z are respectively set to satisfy the following relations: 0.45
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公开(公告)号：JPH09135052A
公开(公告)日：1997-05-20
申请号：JP22813796
申请日：1996-08-29
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , KONDO OSAMU , YURI MASAAKI , KUME MASAHIRO , YOSHIKAWA AKIO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device, which is to be used as a light source for an optical disc, with a small astigmatic difference, low noise and stable horizontal mode from low power to high power. SOLUTION: On an N-type semiconductor substrate 51, a buffer layer 52 composed of an N-type semiconductor layer, a clad layer 53 composed of an N-type semiconductor layer and an active layer 54 are successively formed. On the active layer 54, a first light guide layer 55, which is composed of a P-type semiconductor layer that has a loss changing layer 55a composed of a P-type semiconductor layer which has a smaller forbidden band width than that of the active layer 54, and a second light guide layer 56 composed of a P-type semiconductor layer are successively formed. On the second light guide layer 56, a third light guide layer 57a composed of a stripe-shaped P-type semiconductor layer is formed, and on the both sides of the third light guide layer 57a on the second light guide layer 56, a transparent current block layer 57 is formed against the laser beams oscillated by the active layer 54 composed of an N-type semiconductor layer.
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公开(公告)号：JPH06342957A
公开(公告)日：1994-12-13
申请号：JP13085893
申请日：1993-06-01
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , NAITO HIROKI , ITO KUNIO
Abstract: PURPOSE:To realize a semiconductor laser having a stable transverse mode up to a high output with low noise. CONSTITUTION:A first optical guide layer 5 (Ga1-Y1AlY1As) and a second optical guide layer 6 (Ga1-Y2AlY2As), of one conductivity type, are provided at least on one side of main surfaces of an active layer 4 (Ga1-XAlXAs). A first current blocking layer 7 (Ga1-Z1AlZ1As) having a stripelike window 7a and a second current blocking layer 8 (Ga1-Z1AlZ2As) having a stripelike window 8a, of the opposite conductivity type, are formed on the layer 6. The windows 7a, 8a have Ga1-Y3AlY3As layers of the same conductivity as the layers 5, 6. The window 8a is wider than the window 7a, wherein Z2>Y3>Y2>X>=0, and Y1>Y2, Z1>Z2 are satisfied among values X, Y1, Y2, Y3, Z1 and Z2 of AlAs mixed crystal ratio.
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公开(公告)号：JPH09283851A
公开(公告)日：1997-10-31
申请号：JP9090396
申请日：1996-04-12
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAGAI HIDEO , TAKAYAMA TORU
Abstract: PROBLEM TO BE SOLVED: To obtain second harmonic wave beams of high mean output if the means output of a semiconductor laser is relatively low by a method wherein laser beams emitted from the semiconductor laser are converted into harmonic wave beams, the wavelength is adjusted having mode synchronization. SOLUTION: Beans emitted from a front end face 102 of a semiconductor laser 10 are coupled to a wavelength conversion waveguide path 111. The wavelength conversion waveguide path 111 uses a waveguide path requiring a polarized beams in a TM mode for basical wave beams. The semiconductor laser oscillated with the polarized beams in a TE mode. In order to fetch out effectively second harmonic wave beams from an emitting end face 113, a non-reflection (AR) coating for a wavelength 860nm band is performed on an incident end face 112, a high-reflection(HR) coating for a 430nm band is performed thereon, the HR coating for a 860nm band is performed on an emitting end face 113, and the AR coating for a 430nm band is performed thereon. A narrow band band-pass filter 130 is inserted into an external resonator so that an oscillation wavelength of the semiconductor laser 100 is adjusted.
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公开(公告)号：JPH09246660A
公开(公告)日：1997-09-19
申请号：JP4990996
申请日：1996-03-07
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： TAKAYAMA TORU , KONDO OSAMU , YOSHIKAWA AKIO
IPC: H01S5/00 , H01S5/065 , H01S5/183 , H01S5/187 , H01S5/223 , H01S5/323 , H01S5/343 , H01S3/18 , H01S3/133
Abstract: PROBLEM TO BE SOLVED: To provide a surface emission type semiconductor laser which outputs high power beam suited to light source for optical information processings and exciting nonlinear optical materials and has a single peak far-field pattern. SOLUTION: A first optical guide layer 3 of one conductivity type, an active layer 4 and second optical guide 1 of opposite conductivity type having a circular diffraction lattice are formed on a semiconductor substrate of one conductivity type. A current block layer 6 of one conductivity type which has a window 6a and is transparent to a laser beam emitted from the active layer 4 is formed on the guide layer 5 and third type optical guide layer 7 of opposite conductivity type is formed in the window 6a.
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