公开(公告)号：DE2606743A1

公开(公告)日：1976-09-02

申请号：DE2606743

申请日：1976-02-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KOIKE SUSUMU ,  KAMBARA GINJIRO ,  MATSUDA TOSHIO

IPC: H01L21/8247 ,  G11C16/04 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34 ,  H01L27/04

公开(公告)号：CA1078517A

公开(公告)日：1980-05-27

申请号：CA245948

申请日：1976-02-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KOIKE SUSUMU ,  KAMBARA GINJIRO ,  MATSUDA TOSHIO

IPC: H01L21/8247 ,  G11C16/04 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40

Abstract: The present invention provides a memory device of the MNOS FET type wherein each of the source region and the drain region contain a high concentration part and a low concentration part. A double layered insulation film under the gate electrode extends between the source region and drain region but contacts only the lower concentration parts thereof, so that acceptor impurity is prevented from mixing into the double layered insulation film from the source region and drain region, thus greatly improving the life (number of repeated uses) of the device.

公开(公告)号：FR2301894A1

公开(公告)日：1976-09-17

申请号：FR7604659

申请日：1976-02-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KOIKE SUSUMU ,  KAMBARA GINJIRO ,  MATSUDA TOSHIO

IPC: H01L21/8247 ,  G11C16/04 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40