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    3.
    发明专利
    未知

    公开(公告)号：DE2657415A1

    公开(公告)日：1977-07-07

    申请号：DE2657415

    申请日：1976-12-17

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KANBARA GINJIRO ,  KOIKE SUSUMU ,  MATSUDA TOSHIO

    IPC: H01L21/225

    Abstract: A silicon oxide layer containing a group III element such as boron, aluminum or gallium is formed on a semiconductor substrate. The substrate is then heat treated at 600 DEG C - 1200 DEG C in a nitrogen atmosphere and a diffusion process carried out thereafter. In this manner, the impurity diffused surface of the semiconductor body is controlled to a low concentration not higher than 1018/cm3 of the group III element. This is due to the fact that the silicon oxide layer containing the group III element (that is, the so-called doped oxide) is partly converted to a nitride in the course of an ammonia treatment resulting in an impurity source for the low concentration diffusion. The present method is useful in forming the base region of an NPN transistor, for example.

    FERROELECTRIC THIN FILM DEVICE AND MANUFACTURE THEREOF
    5.
    发明专利
    FERROELECTRIC THIN FILM DEVICE AND MANUFACTURE THEREOF 失效

    公开(公告)号：JPH0712644A

    公开(公告)日：1995-01-17

    申请号：JP14998793

    申请日：1993-06-22

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： MATSUDA YOSHIAKI ,  MATSUDA TOSHIO ,  KAWABATA TOSHIHARU

    IPC: G01J1/02 ,  H01L29/84 ,  H01L37/02

    Abstract: PURPOSE:To decrease the wire breakdowns to be generated at the electrode at the boundary part of two organic thin films having different elastic moduli by forming the part in contact with the electrode at the boundary part between the first organic thin film located between the electrode and an outer electrode connecting part and the second organic thin film for holding each element in the comb shaped protruding and recess-part shapes. CONSTITUTION:Of the boundary part of organic thin films 6 at organic thin film 3B between an electrode 7 and an outer connecting part 5, protruding parts 16, which protrude toward the thin film 6 in the comb shape, are provided at the part in contact with the electrode 7. A plurality of recess parts 17 are formed between a plurality of the protruding parts 16. The connecting part 5 is depressed in the direction of the electrode 7 at the recess parts 17 and connected with the electrode 7 at the recess parts, respectively. Thus, a boundary B between the thin film 3B and the thin film 6 does not become linear, and tensile stress does not act on the entire region of the boundary part B. The stress is concentrated only to the protruding parts 16. Therefore, the tensile stress acting on the recess parts 17 is alleviated, and the wire breakdowns of the electrode 7 can be decreased.

    END FACE RADIATION TYPE LUMINOUS SEMICONDUCTOR DEVICE
    6.
    发明专利
    END FACE RADIATION TYPE LUMINOUS SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH04343483A

    公开(公告)日：1992-11-30

    申请号：JP11578291

    申请日：1991-05-21

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： SEKI AKIRA ,  MATSUDA TOSHIO

    IPC: H01L33/08 ,  H01L33/14 ,  H01L33/26 ,  H01L33/40 ,  H01L33/58

    Abstract: PURPOSE:To maintain narrow a luminous radiation angle for stabilization by having an element having P-type clad layers or the like piled in order on an N-type block layer having a plurality of stripe cutouts of not less than two pieces and a stripe part facing the N-type block layer. CONSTITUTION:A current block construction, in which an N-type block layer 7 is formed on a P-type semiconductor substrate 8 and PN inverse junction is used. An N-type semiconductor 7 is in stripes and partially removed and this part becomes a current-through part. Radiation occurrs only in an active layer corresponding to the upper part of stripe cutout of the N-type block layer 7 and this part becomes an optical waveguide. Silicon oxide films 2 having contact windows opened in stripes corresponding to N-type layer cutouts are formed on this element surface where excepting those an N-type electrode 1 is formed. Thereby, an interference phenomena of the optical waveguide is removed and a radiation angle can be stably and maintained narrow.

    LIQUID PHASE EPITAXIAL GROWTH METHOD
    7.
    发明专利
    LIQUID PHASE EPITAXIAL GROWTH METHOD 失效

    公开(公告)号：JPH02144911A

    公开(公告)日：1990-06-04

    申请号：JP29986088

    申请日：1988-11-28

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIGURO NAGATAKA ,  MATSUDA TOSHIO

    IPC: C30B19/00 ,  C30B19/06 ,  H01L21/208

    Abstract: PURPOSE:To thickly and uniformly form an epitaxial growth layer by placing an epitaxial growth semiconductor substrate in a boat such that a surface of the substrate to be subjected to epitaxial growth processing is directed obliquely downwardly, and bringing said substrate surface into contact with a liquid phase epitaxial growth melt. CONSTITUTION:A plurality of GaAs substrates 3 which are slanted at a given angle such that processed surfaces thereof are directed obliquely downwardly, are set in a slide section 12 of a carbon-made boat 11. A melt 14 which involves Ga as a solvent and Al and As as solutes and is saturated at high temperature is put in a fixed section 13 of the boat 11. The slide section 12 is horizontally moved and brought into contact with the GaAs substrate 3, and thereafter the whole sample is cooled for epitaxial growth. In such a manner, the surface to be subjected to the epitaxial growth processing is placed at the upper portion of the melt where solute density is highest in the melt, etc., the supersaturation of the solution is high, whereby thermal movement of the solute in the melt is finished. Thus, a thick epitaxial growth layer can be yielded on the surface of the semiconductor substrate which is subjected to the epitaxial growth processing.

    MANUFACTURE OF INSULATING FILM
    8.
    发明专利
    MANUFACTURE OF INSULATING FILM 失效

    公开(公告)号：JPS63215042A

    公开(公告)日：1988-09-07

    申请号：JP4930887

    申请日：1987-03-04

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： SAWA KAZUHIRO ,  MATSUDA TOSHIO

    IPC: H01L21/318

    Abstract: PURPOSE:To obtain a fine silicon nitride film at a low temperature without damaging a semiconductor surface, by performing the vapor growth and the heat treatment of an insulating film under light irradiation. CONSTITUTION:The vapor growth and the heat treatment of an insulating film are performed under light irradiation. The insulating film is made of silane, disilane or trisilane and anmonia. Thereby, a fine silicon nitride film can be formed at a low temperature without damaging the semiconductor surface.

    CRYSTAL DEFECT DETECTING METHOD OF SAPPHIRE
    9.
    发明专利
    CRYSTAL DEFECT DETECTING METHOD OF SAPPHIRE 失效

    公开(公告)号：JPS6017926A

    公开(公告)日：1985-01-29

    申请号：JP12530883

    申请日：1983-07-08

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： KAWABATA TOSHIHARU ,  MATSUDA TOSHIO

    IPC: G01N25/72 ,  H01L21/66 ,  H01L21/86

    Abstract: PURPOSE:To enable to detect the crystal defect of a sapphire by specially heat treating the sapphire in a gas atmosphere which contains chlorinated hydrogen gas, generating a pit in the sapphire, and observing the pit. CONSTITUTION:A mixture gas which has 2:1 of mixture ratio of argon and chlorinated hydrogen gas is flowed at the flow rate of 1.5 liter per one minute into a quartz tube, and a sapphire substrate is heat treated for approx. 30min. The optimum heat treating temperature for generating a pit capable of correctly detecting a defect must be 600 deg.C or higher. Thus, the crystal defect such as a dislocation presented in the crystal of the sapphire can be generated as the pit on the surface, thereby discriminating the propriety of the crystallinity of the sapphire by this detection.

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