公开(公告)号：JP2001144307A

公开(公告)日：2001-05-25

申请号：JP2000264032

申请日：2000-08-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： UEMOTO YASUHIRO ,  YAMASHITA KATSUSHIGE ,  MIURA TAKASHI

IPC: H01L29/74 ,  H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: PROBLEM TO BE SOLVED: To provide an SOI semiconductor device satisfactory in voltage breakdown characteristics in an arbitrary reverse bias state. SOLUTION: A semiconductor substrate 1 and n-type semiconductor layer 3 are laminated with a silicon oxide film 2 in between, while a p-type semiconductor layer 9 and n+-layer semiconductor layer 11 are formed on the surface of n-type semiconductor layer 3, with a source electrode 13 and drain electrode 14 provided, respectively. A p-type semiconductor layer 12, whose conductivity is different from the n-type semiconductor layer 3 is formed at the interface between the n-type semiconductor layer 3 and a silicon oxide film 2. For the p-type semiconductor layer 12, the impurity amount for each unit region is set higher than 3×1012/cm2 for avoiding entire depletion even if a reverse bias voltage is applied between the source electrode 13 and a drain electrode 14.

公开(公告)号：JP2000294801A

公开(公告)日：2000-10-20

申请号：JP10107299

申请日：1999-04-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIURA TAKASHI

IPC: H01L27/12 ,  H01L29/861

Abstract: PROBLEM TO BE SOLVED: To obtain a semiconductor device having semiconductor elements superior in breakdown voltage and radiation property. SOLUTION: In a semiconductor device comprising a buried silicon oxide film 2 insulating a semiconductor forming substrate 3 from a semiconductor support base 1 and semiconductor elements formed on the semiconductor forming substrate 3, the buried silicon oxide film 2 is so formed that the thickness of a portion of the silicon oxide film 2 buried between the semiconductor forming substrate 3 underlying regions having electrodes where an applied voltage rises high and the support base 1 is higher than the thickness of other portions of the film 2 buried in other regions.

公开(公告)号：JPH01258465A

公开(公告)日：1989-10-16

申请号：JP8689888

申请日：1988-04-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIURA TAKASHI ,  TAKAYAMA YUICHIRO

IPC: H01L21/56 ,  H01L23/29 ,  H01L23/31 ,  H01L27/10

Abstract: PURPOSE:To protect wires from disconnection and to prevent soft errors attributable to alpha-rays by a method wherein a memory region is divided into a plurality of small memory cell blocks and only the regions occupied by the blocks is covered by a resin capable of absorbing alpha-rays. CONSTITUTION:The memory region of a semiconductor chip 1 is divided into a plurality of memory cell blocks 2. Only the regions occupied by the memory cell blocks 2 are covered by a resin 3 capable of absorbing alpha-rays, but the area between the memory cell blocks 2 is not covered by the resin 3 capable of absorbing alpha-rays and is formed into inter-block streets 4. In a device designed as such, alpha-rays are absorbed by the resin 3 capable of absorbing alpha-rays, which prevents soft errors from being produced in the memory cell blocks 2. Further, stress is alleviated, which protects chips from cracks and aluminum wires from disconnection.

公开(公告)号：JPH03190237A

公开(公告)日：1991-08-20

申请号：JP33058489

申请日：1989-12-20

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MIURA TAKASHI

IPC: H01L21/3205 ,  H01L23/52

Abstract: PURPOSE:To reduce stress, and to prevent generation of disconnection by attaching a polysilicon film to an irregular region in thickness thicker than a silicide film and attaching a silicide film to a flat region in thickness thicker than a polysilicon film. CONSTITUTION:A semiconductor device is composed of a semiconductor substrate 1, an insulating film 2, a first polysilicon film 5, a second polysilicon film 6, a first silicide film 7 and a second silicide film 8. Structure in which the polysilicon film 6 is attached to an irregular region in thickness thicker than the silicide film 7 and the silicide film 8 is attached to a flat region in thickness thicker than the polysilicon film 5 is formed. Accordingly, the stress of the irregular region is relaxed, thus preventing the generation of cracks and disconnection.