公开(公告)号：JP2001038310A

公开(公告)日：2001-02-13

申请号：JP21602999

申请日：1999-07-30

Applicant: MATSUSHITA ELECTRIC IND CO LTD ,  MATSUSHITA ELECTRONICS CORP

Inventor： TAKII AKIMASA ,  ITOU KATSUMICHI ,  NAKAYAMA ICHIRO ,  SHIBAI MASAAKI ,  MAEDA TOMOYA ,  MATSUSHITA YOSHISHIGE ,  NIKAWA HIDEO

IPC: B08B3/08 ,  B08B3/02 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To efficiently rinse a subject to be rinsed by a liquid chemical uniformly in the whole area while reducing the amount of the liquid chemical to be used per one sheet of the subject. SOLUTION: The plate-shaped subject 1 to be rinsed is set in a subject holding means 13a used for horizontally setting the subject 1 and the outer periphery of the set subject 1 is surrounded with a liquid chemical holding means 16. The set subject 1 is immersed in the liquid chemical by supplying the liquid chemical through the means 16 when rinsed and when the rinsing is finished, the used liquid chemical is discharged through the means 13a.

公开(公告)号：JPH11162944A

公开(公告)日：1999-06-18

申请号：JP33141897

申请日：1997-12-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： SASAKI TOMOYUKI ,  NIKAWA HIDEO

IPC: G03F7/11 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To secure etch selectivity between an organic film and a photoresist used as a mask in the etching of the organic film. SOLUTION: A first organic film 13, having a straight chain structure and formed on a semiconductor substrate 1, is etched by casting light with a second organic film 14 having a cyclization structure and formed on the first organic film 13 used as a mask pattern. Through this method, only the first organic film 13 is allowed to react selectively and thereby removed. Since the first organic film 13 has a straight chain structure, a crosslinking reaction does not occur, even if light is irradiated and the etch rate is not affected. In the mean time, the second organic film 14 has a cyclization structure, and when light is irradiated, a crosslinking reaction is made to advance so that etching is suppressed. Therefore, the etch selectivity (the first organic film/the second organic film) between the first and the second organic film 13 and 14 increases, and the first organic film 13 can be more selectively etched than the second organic film 14.

公开(公告)号：JPH1180974A

公开(公告)日：1999-03-26

申请号：JP23798497

申请日：1997-09-03

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： CHIWARI NOBUHIRO ,  IMAI SHINICHI ,  SHIMOMURA KOJI ,  NIKAWA HIDEO

IPC: C23F1/00 ,  H01L21/302 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a method for exactly measuring the etching rate of a film formed from a low-viscosity soln. SOLUTION: Grooves 5 (rectangular blind holes) are formed on the surface of a substrate 1 and the low-viscosity soln. for forming an antireflection film is applied on the substrate. The antireflection film 3 obtd. by drying of the soln. is thin in the flat parts exclusive of the grooves 5 of the substrate surface and is thicker as the grooves 5 are more embedded within the grooves 5. After the initial film thickness of the antireflection film 3 in the grooves 5 is measured, the antireflection film 3 is etched to the extent of allowing the antireflection film 3 to remain in the grooves 5 and the residual film thickness of the antireflection film 3 in the grooves 5 after the etching is measured. The difference between the initial film thickness and the residual film thickness is divided by the etching time, by which the etching rate of the antireflection film 3 is determined. The etching rate of the film formed from the low-viscosity soln. to the extent that only the extremely thin film is formed on the flat surface may be measured.

公开(公告)号：JPH06112155A

公开(公告)日：1994-04-22

申请号：JP25602192

申请日：1992-09-25

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L21/90

Abstract: PURPOSE:To decrease the reducing amount of the film reduction at the central part of a plug by depositing a tungsten oxide film and an alpha-phase tungsten film, whose etching speed is slower than a lower layer, on the central part of the contact plug. CONSTITUTION:As barrier layers, a titanium nitride (TiN) film/a titanium(Ti) film 15 are continuously deposited to the thicknesses of 100nm and 20nm by using sputtering, respectively. Then, a tungsten film 16 is deposited to the thickness of 300nm by CVD. Then, oxygen (O2) gas is continuously introduced. A tungsten oxide film 18 is deposited to the thickness of 200nm. Then, the entire surface of the tungsten film 16 is etched back so that the tungsten film 16 in a contact hole 14 is made to remain. Tungsten remnant 19 is removed by over-etching for 10 seconds. Thus, the contact plug having the excellent flatness without dents at the central part of the plug can be formed.

公开(公告)号：JPH03136313A

公开(公告)日：1991-06-11

申请号：JP27675789

申请日：1989-10-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO

IPC: G03F1/22 ,  G03F1/42 ,  H01L21/027

Abstract: PURPOSE:To improve the precision of pattern position, by measuring the amount of pattern position deviation caused by the internal stress of an absorber after an X-ray mask is manufactured, and forming a pattern position distortion correcting film which has a film stress for correcting pattern position deviation and is composed of elements whose atomic numbers are equal to 14 or smaller. CONSTITUTION:An X-ray transmitting BN film 2 is deposited on an Si water substrate 1, and thereon an X-ray absorbing Ta film 3 is deposited. Next, electron beam resist is spread; exposure.development is performed; a resist pattern 4 arranged at lattice position of constant interval is formed; said resist patter is used as a mask, and a Ta pattern 5 is obtained by dry etching; an X-ray mask is formed by etching from the rear of the Si wafer 1, and the position of the Ta pattern is measured. In the case where the film stress of Ta is compressive, the position is shifted from the lattice position toward the inside. When the film stress is tensile, the position is shifted toward the outside. By depositing an SiN film 6 composed of elements whose atomic numbers are equal to 14 or smaller on the upper layer of the mask, the amount of position deviation caused by the stress of the Ta film is reduced, and a high precision X-ray mask can be manufactured.

公开(公告)号：JPH02273915A

公开(公告)日：1990-11-08

申请号：JP9432089

申请日：1989-04-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO

IPC: G03F1/22 ,  H01L21/027

Abstract: PURPOSE:To assure the enhancement of the mechanical strength and evenness of the title mask as well as its stabilization against changes in temperature by a method wherein oxygen ion exceeding 1X10 cm is implanted in a silicon substrate to be an X-ray mask retainer and then the silicon substrate is etched away from the rear to the oxygen ion implanted region using an alkali base etchant so as to form an X-ray transmissive body part. CONSTITUTION:Oxygen ion exceeding 1X10 cm is implanted in a silicon substrate 1 to be an X-ray mask retainer. Then, the Si substrate 1 is etched away from the rear to the oxygen ion-implanted region 4 using an alkali base etchant so as to form an X-ray transmissive body part. At this time, the title X-ray mask posing no problem of the bonding properties of the silicon substrate 1 onto the X-ray transmissive body, in high mechanical strength, even thickness and excellent flatness as well as having thermally stable X-ray transmissive part can be manufactured easily.

公开(公告)号：JPS63278330A

公开(公告)日：1988-11-16

申请号：JP11418287

申请日：1987-05-11

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASU YASUHIRO ,  TAKENAKA HIROSHI ,  NIKAWA HIDEO ,  TODOKORO YOSHIHIRO

IPC: C23C16/34 ,  C23C16/50 ,  G03F1/00 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To obtain a low-stress silicon nitride film used as a film member of a X-ray mask, by varying high-frequency power during film formation in a plasma CVD process where a mixed gas consisting of a nitrogen gas and a silane gas is used. CONSTITUTION:After a plasma CVD method is used to pile a silicon nitride (SiNx) film 2 on an Si substrate 1, a sputtering method is used to pile a tungsten W film 3 thereon. A dry etching method is used to perform the patterning of the tungsten film 3, and a silicon nitride film 4 serving as a protective film of the film 3 is piled on the film 3 by the plasma CVD method. Further a silicon nitride film 6 used as a mask in a back etching process is piled on the backside of the substrate. Hence, a silicon nitride film used as a X-ray mask, small in content of hydrogen in a low temperature process and controllable in stress as high-frequency power is varied, can be obtained.

公开(公告)号：JPS6295856A

公开(公告)日：1987-05-02

申请号：JP23547685

申请日：1985-10-23

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： NIKAWA HIDEO ,  TODOKORO YOSHIHIRO

IPC: H01L21/3205

Abstract: PURPOSE:To facilitate the formation of fine metallic patterns, by forming a resist pattern on a substrate, applying plasma vertically to the surface of the pattern, depositing a metal layer on the surface and removing the pattern together with the overlaid metal layer. CONSTITUTION:A semiconductor substrate 1 is provided with resist 3 having a pattern opened according to a design as desired. Plasma 7 containing F or Cl is applied approximately vertically to the surface of the pattern 3. The substrate is then dipped in an organic solvent so that the pattern 3 is configured to have an undercut space. A metal 4 is vapor deposited on the whole surface and the pattern 3 is removed together with the overlaid metal 4 by the lift-off technique. A fine metallic pattern 5 can be provided in this manner.

公开(公告)号：JPH11204500A

公开(公告)日：1999-07-30

申请号：JP209798

申请日：1998-01-08

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMAGUCHI MINEO ,  NIKAWA HIDEO

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To make it possible to realize high selection ratio of a silicon nitride film to an etching stop film when the silicon nitride film is used as the etching stop film, and also to make it possible to keep interior of a dry etching unit in a clean state. SOLUTION: In a process by an RIE unit, wherein a contact hole 18 is formed on the region between fellow gate electrodes 13 in an interlayer insulating film 16 using a silicon nitride film 15, which is used as an etching stop film, flow rates of CHF3 gas, He gas and O2 gas are respectively set at a flow rate of 40 sccm, a flow rate of 100 sccm and a flow rate of 20 sccm to mix these gases with one another on such a condition that the volume ratio of the O2 gas to the CHF3 gas is a ratio of 1 to higher than 30% to lower than 40% and a plasma etching is performed on the film 16 using a resist pattern 17 as a mask. At this time, an ammonium compound film 15a is formed on a region, which is located under the lower side of an open part 17a formed in the resist pattern 17, on the film 15.

公开(公告)号：JPH11168086A

公开(公告)日：1999-06-22

申请号：JP33271697

申请日：1997-12-03

Applicant: MATSUSHITA ELECTRIC IND CO LTD ,  MATSUSHITA ELECTRONICS CORP

Inventor： SUNADA TAKESHI ,  NIKAWA HIDEO ,  MATSUSHITA YOSHISHIGE ,  KAJIWARA TAIHEI ,  SHIBAI MASAAKI ,  TOMITA KAZUYUKI ,  ITOU KATSUMICHI

IPC: H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide a processing chamber-concentrated equipment which allows efficient processing, both in an atmospheric atmosphere and in a vacuum atmosphere and is suitable for production of many types in small quantity, and also provide a method for processing a substrate. SOLUTION: A processing chamber concentrated equipment is constituted of a dry etching chamber 3, an ashing chamber 4, and a chemical processing chamber 5, which are concentrated assembled in the vicinities of three directions of a substrate carried-in a chamber 2 having a substrate carrying mechanism 1. The substrate carried-in chamber 2 has an evacuation function and an atmospheric ventilation function. Gates between the substrate carried-in chamber 2 and each of the other three chambers are provided with gate valves 6b to 6d which serve as a cutout wall between a vacuum atmosphere and an atmospheric atmosphere and also serve as a gate mechanism, when a substrate is carried in. A substrate to be processed can be carried into any of the dry etching chamber 3, ashing chamber 4 and chemical treatment chamber 5 in any order, and these three processes can be conducted as a series of processes. Through this method, the productivity of many types in small quantity production processes such as the patterning of interconnections can be increased.