中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.022 seconds)

    LOW NOISE LEVEL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
    4.
    发明专利
    LOW NOISE LEVEL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 未知

    公开(公告)号：GB1277988A

    公开(公告)日：1972-06-14

    申请号：GB1477170

    申请日：1970-03-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： MATSUO TAKATOSHI ,  INOUE MORIO ,  OKABAYASHI YOICHI ,  YAMAO SEIKI ,  ISHIHARA HIROSHI

    IPC: H01L21/00 ,  H01L21/225 ,  H01L21/316 ,  H01L29/08 ,  H01L29/167

    Abstract: 1277988 Semi-conductor devices MATSUSHITA ELECTRONICS CORP. 26 March 1970 [28 March 1969 (3)] 14771/70 Heading H1K The noise level in a Si transistor is reduced by providing a dislocation density in the emitter region of less than 10 5 cm. -2 , and preferably also by arranging the surface concentration of conductivity-determining impurities in the emitter region to be in the range 1 Î 10 19 -5 x 10 20 atoms/cm. 3 . Three embodiments are described, each comprising a planar Si transistor having a B-doped base region diffused either from a B layer deposited from BBr 3 or from a SiO 2 - B 2 O 3 layer deposited by thermal decomposition of ethyl silicate and trimethyl borate. The emitter region may be formed by diffusion of P from a SiO 2 -P 2 O 5 layer containing 1-30% by wt. of P 2 O 5 , e.g. formed by thermal decomposition of the mixed vapours of ethyl silicate and trimethyl phosphate, and cooling the Si body slowly to produce the required low dislocation density. Dislocation density may also be reduced by including in the emitter region an electrically neutral element such as Sn or Ge. This may be achieved by incorporating SnO 2 into the mixed oxide layer which serves as the emitter diffusion source, the layer being sintered at 800‹ C. in oxygen before diffusion takes place at 1050‹ C. in nitrogen. The layer may be deposited from a carrier gas comprising nitrogen and oxygen, the nitrogen having been passed over solutions of ethyl silicate, trimethyl phosphate and tin tetranormalbutyl. In this case a phosphorus surface concentration of as high as 7 x 10 20 atoms/cm. 3 may be tolerated while maintaining the dislocation density below the required limit.

Patent Agency Ranking