公开(公告)号：JPH05343624A

公开(公告)日：1993-12-24

申请号：JP15325592

申请日：1992-06-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： SAWADA TOMIZO ,  KUME TOMOHIRO

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/06

Abstract: PURPOSE:To obtain a semiconductor integrated circuit in which a parasitic transistor is not generated, by making a current flow into a signal I/O terminal, when the base voltage of a PNP transistor is going to decrease to a voltage or lower at which a forward bias does not occur. CONSTITUTION:When the emitter voltage A of an NPN transistor 3 is 0.7V and the base voltage B is 1.4V, the NPN transistor 3 and a PNP transistor 4 turn on and a current flows. An NPN transistor 5 and a PNP transistor 6 turn off and a current scarcely flows. PNP transistors 4, 6 which are turned into diodes by connecting each collector with each base are connected in series with the transistor 3 and the transistor 5, respectively. Thereby a high voltage is prevented from inversely applied. Hence the voltage is clipped at 1.4V, and the base voltage does not become negative, so that a parasitic transistor is not generated. In the period (II), the base voltage is limitted at 0V, so that a semiconductor integrated circuit in which generation of a parasitic transistor is prevented can be realized.

公开(公告)号：JPH04244508A

公开(公告)日：1992-09-01

申请号：JP1053491

申请日：1991-01-31

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KUME TOMOHIRO ,  SAWADA TOMIZO ,  KANEZAKI KOICHI

IPC: F23N5/00 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8226 ,  H01L27/04 ,  H01L27/082 ,  H03K19/091

Abstract: PURPOSE:To strengthen a device against noise upon ignition and reduce a circuit current compared with prior art upon combustion after the firing. CONSTITUTION:During operation of an igniter 8, a switching element 18 is turned on, and currents from current supplies 19, 20 are all driven to flow to an injector, and after the ignition, the switching element 18 is turned off to allow an injector current to flow only from the current source 19. Thereby noise resistances upon ignition and during combustion and power consumption are improved.

公开(公告)号：JPH11251503A

公开(公告)日：1999-09-17

申请号：JP5165198

申请日：1998-03-04

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： SAKAGUCHI SHIGEKI ,  IMAZU KENICHI ,  NARAOKA HIROKI ,  SAWADA TOMIZO ,  AOI KAZUHIRO

IPC: H05K1/18 ,  H01L23/50

Abstract: PROBLEM TO BE SOLVED: To solder parts easily firmly, by depositing a metal layer made of Sn containing Bi less than predetermined in percent on an electrode lead wire to be connected to the outside. SOLUTION: A metal layer made of Sn containing by weight less than 4% Bi is deposited on an electrode lead wire 5 connected to the outside as an outermost metal layer 6. A semiconductor element is die-bonded on a Cu lead frame and is provided with a wiring connected to an external electrode. An underlayer Ni-plated film is formed on the electrode lead wire 5 to be connected to the outside of the semiconductor device subjected to plastic sealing and lead forming, and then Bi is deposited on the metal underlayer as an Sn-Bi alloy film. This can make it possible to easily mount electronic parts on a printed substrate or a circuit substrate with solder at a low temperature and to improve the reliability of the portion bonded with solder.