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公开(公告)号：DE69419186T2
公开(公告)日：1999-10-21
申请号：DE69419186
申请日：1994-01-05
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKANISHI HIDEYUKI , UENO AKIRA , NAGAI HIDEO , YOSHIKAWA AKIO
IPC: H01L21/306 , H01L21/308
Abstract: A method of performing anisotropic etching more than once with respect to a semiconductor substrate (1) is provided with the steps of performing first-time anisotropic etching by using a first etching mask (2) so as to form a first anisotropically etched region (4) which is hollow, forming a second etching mask (7) over the first etching mask (2), performing second-time anisotropic etching by using the second etching mask (7), and previously forming the first etching mask (2) from a material which is resistant to an etchant used for patterning the second etching mask (7) before the first-time anisotropic etching is performed. Thus, the edge portion (6) of the first etched region (4) is protected so that its configuration is excellently maintained. By way of example, either of the etching masks is composed of a dielectric material such as a silicon dioxide film, while the other etching mask is composed of a metallic material such as Au and Ti, and the second-time anisotropic etching is performed by using diluted potassium hydroxide.
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公开(公告)号：DE69419550D1
公开(公告)日：1999-08-26
申请号：DE69419550
申请日：1994-03-28
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKANISHI HIDEYUKI , UENO AKIRA , NAGAI HIDEO , YOSHIKAWA AKIO
Abstract: An optical head for optical recording and reproducing apparatuses is disclosed, which comprises a semiconductor laser, a mirror for reflecting a light beam emitted from the semiconductor laser, a diffraction grating for dividing the light beam into zero-order, plus and minus first-order beams, a holographic diffraction grating being arranged at an optical path of the beams divided by the diffraction grating, an objective lens for focusing the beams on a disk and causing the beams reflected from the disk to be incident on the holographic diffraction grating to diffract the beams, and a photodetector for detecting a tracking error signal by receiving the beams diffracted by the holographic diffraction grating, the semiconductor laser has a beam incident area which the beam reflected from the disk is incident, the beam incident area acts to scatter or to absorb the incident beam. As a result, the optical head is able to obtain the stable tracking error signal.
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公开(公告)号：DE69319973T2
公开(公告)日：1998-12-10
申请号：DE69319973
申请日：1993-01-29
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： UENO AKIRA , NAKANISHI HIDEYUKI , NAGAI HIDEO , YOSHIKAWA AKIO
IPC: G02B5/18 , G11B7/09 , G11B7/135 , G11B7/1353
Abstract: A diffraction element including a diffraction grating for dividing a light beam, emitted from a light source along a predetermined path, into a principal light beam and at least two auxiliary light b eams, and a hologram for separating the beam, which has been reflected from an optical information recording medium, from the predetermined path. The diffraction grating and the hologram are integrated together in the form as formed in opposite portions of a block of glass or plastics in alignment with each other. A slide provided in at least a portion of the diffraction element for sliding engagement with a cylindrical surface axial with an optical axis of the diffraction element to permit the diffraction element to be rotatable about the optical axis.
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公开(公告)号：DE69319973D1
公开(公告)日：1998-09-03
申请号：DE69319973
申请日：1993-01-29
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： UENO AKIRA , NAKANISHI HIDEYUKI , NAGAI HIDEO , YOSHIKAWA AKIO
IPC: G02B5/18 , G11B7/09 , G11B7/135 , G11B7/1353
Abstract: A diffraction element including a diffraction grating for dividing a light beam, emitted from a light source along a predetermined path, into a principal light beam and at least two auxiliary light b eams, and a hologram for separating the beam, which has been reflected from an optical information recording medium, from the predetermined path. The diffraction grating and the hologram are integrated together in the form as formed in opposite portions of a block of glass or plastics in alignment with each other. A slide provided in at least a portion of the diffraction element for sliding engagement with a cylindrical surface axial with an optical axis of the diffraction element to permit the diffraction element to be rotatable about the optical axis.
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公开(公告)号：DE69419550T2
公开(公告)日：2000-01-13
申请号：DE69419550
申请日：1994-03-28
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKANISHI HIDEYUKI , UENO AKIRA , NAGAI HIDEO , YOSHIKAWA AKIO
Abstract: An optical head for optical recording and reproducing apparatuses is disclosed, which comprises a semiconductor laser, a mirror for reflecting a light beam emitted from the semiconductor laser, a diffraction grating for dividing the light beam into zero-order, plus and minus first-order beams, a holographic diffraction grating being arranged at an optical path of the beams divided by the diffraction grating, an objective lens for focusing the beams on a disk and causing the beams reflected from the disk to be incident on the holographic diffraction grating to diffract the beams, and a photodetector for detecting a tracking error signal by receiving the beams diffracted by the holographic diffraction grating, the semiconductor laser has a beam incident area which the beam reflected from the disk is incident, the beam incident area acts to scatter or to absorb the incident beam. As a result, the optical head is able to obtain the stable tracking error signal.
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Patent Agency Ranking
公开(公告)号：DE69419186D1
公开(公告)日：1999-07-29
申请号：DE69419186
申请日：1994-01-05
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKANISHI HIDEYUKI , UENO AKIRA , NAGAI HIDEO , YOSHIKAWA AKIO
IPC: H01L21/306 , H01L21/308
Abstract: A method of performing anisotropic etching more than once with respect to a semiconductor substrate (1) is provided with the steps of performing first-time anisotropic etching by using a first etching mask (2) so as to form a first anisotropically etched region (4) which is hollow, forming a second etching mask (7) over the first etching mask (2), performing second-time anisotropic etching by using the second etching mask (7), and previously forming the first etching mask (2) from a material which is resistant to an etchant used for patterning the second etching mask (7) before the first-time anisotropic etching is performed. Thus, the edge portion (6) of the first etched region (4) is protected so that its configuration is excellently maintained. By way of example, either of the etching masks is composed of a dielectric material such as a silicon dioxide film, while the other etching mask is composed of a metallic material such as Au and Ti, and the second-time anisotropic etching is performed by using diluted potassium hydroxide.
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公开(公告)号：JP2001144373A
公开(公告)日：2001-05-25
申请号：JP32511199
申请日：1999-11-16
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： YOSHIKAWA AKIO , FUKUHISA TOSHIYA , NAKANISHI HIDEYUKI , NAKANISHI NAOKI
IPC: H01S5/22
Abstract: PROBLEM TO BE SOLVED: To eliminate factors that deteriorate laser characteristics and productivity of a two-wavelength semiconductor laser device by etching and embedding growth. SOLUTION: On an n-type GaAs substrate 1, an n-type AlGaAs clad layer 2, an AlGaAs multiple quantum well active layer 3, a p-type cladding layer 4 are formed sequentially, and then current block regions 5 are formed on parts of the p-type cladding layer 4 to form infrared laser structures 21. Regions containing two light-emitting regions are removed, to form recessed regions 23 in parallel and at equal intervals. Red laser structures 22 are formed on the recessed regions by growing an n-type AlGaInP clad layer 7, an AlGaInP multiple quantum well active layer 8, and a p-type clad layer 9 in this order, again by means of a crystal growing method such as MOVPE method. After the infrared laser structures 21 and the red laser structures 22 are isolated, and n-side electrodes 12 and p-side electrodes 10 and 11 are formed, chip separation is made at each boundary between two light-emitting regions.
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公开(公告)号：JP2000252586A
公开(公告)日：2000-09-14
申请号：JP5502199
申请日：1999-03-03
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： FUKUHISA TOSHIYA , MANNOU MASAYA , YOSHIKAWA AKIO
Abstract: PROBLEM TO BE SOLVED: To reduce a waveguide loss of a semiconductor laser by a method wherein a part where a crystal does not grow is hard to generate when an embedding regrowth is made. SOLUTION: In this semiconductor laser, on an n-type GaAs substrate 1, there are in sequence formed a first current block layer 13 composed of an n-type GaAs buffer layer 2, an n-type clad layer 3, an active layer 4, a p-type clad layer 5, and an n-type Al0.5In0.5P, and a second current block layer 14 composed of an n-type Al0.5In0.5P, and in an upper part where the first current block layer 13 and second current block layer 14 are selectively etched in a stripe-like shape. Also, there are in sequence formed a p-type embedding layer 7, a contact layer 8, and a cap layer 9. A p electrode 10 is formed on the cap layer 9, and an n electrode 11 is formed on a back face of the n-type GaAs substrate 1, respectively. Carrier concentration of the first current block layer 13 is 1×1017 cm-3 or less, and the carrier concentration of the second current block layer 14 is 1×1018 cm-3.
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公开(公告)号：JP2000012950A
公开(公告)日：2000-01-14
申请号：JP4760999
申请日：1999-02-25
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： KAWACHI YASUYUKI , NAKANISHI HIDEYUKI , YURI MASAAKI , YOSHIKAWA AKIO , ISHIGURO NAGATAKA
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser which has a surge voltage resisting function and good responsiveness to high-frequency superposition and pulse modulation. SOLUTION: A semiconductor laser device is constituted in such a way that a semiconductor laser chip 1, having an anode and a cathode and a field effect transistor 4 are connected in parallel with each other, and the anode of the chip 1 is connected to the drain of the transistor 4. In addition, the gate of the transistor 4 is connected to the drain of the transistor 4, and the cathode of the chip 1 is connected to the source of the transistor 4.
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公开(公告)号：JPH11261172A
公开(公告)日：1999-09-24
申请号：JP35894698
申请日：1998-12-17
Applicant: MATSUSHITA ELECTRONICS CORP
Inventor： NAKANISHI HIDEYUKI , HAMADA TAKESHI , UEDA DAISUKE , YOSHIKAWA AKIO , SHIMIZU YUICHI
Abstract: PROBLEM TO BE SOLVED: To prevent an inclined surface 111 from tilting over an orthogonal direction of the main surface of a silicon substrate and to separate stray light of leaked laser light from normal light, when a groove having the inclined surface 111 is formed on the silicon substrate of a surface 100, and one of the inclined surfaces serves as a reflective mirror surface for reflecting light emitted from a semiconductor laser chip. SOLUTION: A trapezoid groove or a prismoid recession, which includes a surface (111), is formed on a silicon substrate 10 of a surface (100) that has an off-angle of 5-15 deg. with a direction serving as an axis. And one of the surfaces that tilts to about 45' is allowed to serve as a reflecting mirror surface 12. A laser chip 13 is fixed, such that an end surface of the semiconductor laser chip 13 is in parallel with the upper edge line of the surface which faces opposite to the reflective mirror surface 12.
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