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    2.
    发明专利
    未知

    公开(公告)号：DE60004722D1

    公开(公告)日：2003-10-02

    申请号：DE60004722

    申请日：2000-04-13

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  IMAFUJI OSAMU ,  NAKAMURA SHINJI ,  ISHIDA MASAHIRO ,  ORITA KENJI

    IPC: H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01L33/00

    Abstract: The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.

    3.
    发明专利
    未知

    公开(公告)号：DE60004722T2

    公开(公告)日：2004-06-17

    申请号：DE60004722

    申请日：2000-04-13

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  IMAFUJI OSAMU ,  NAKAMURA SHINJI ,  ISHIDA MASAHIRO ,  ORITA KENJI

    IPC: H01L21/20 ,  H01L21/205 ,  H01L31/18 ,  H01L33/00

    Abstract: The present invention provides a method for producing a group III nitride compound semiconductor substrate including: (a) forming a first semiconductor film over a substrate, the first semiconductor film made of a first group III nitride compound semiconductor and provided with a step; (b) forming a second semiconductor film made of a second group III nitride compound semiconductor having a different thermal expansion coefficient from that of the first group III nitride compound semiconductor on the first semiconductor film; and (c) cooling the substrate and separating the second semiconductor film from the first semiconductor film. Thus, a large-area group III nitride compound semiconductor substrate can be produced in high yields and with high reproducibility.

    4.
    发明专利
    未知

    公开(公告)号：DE19751294A1

    公开(公告)日：1998-06-04

    申请号：DE19751294

    申请日：1997-11-19

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  UEDA TETSUZO ,  BABA TAKAAKI

    IPC: H01L29/12 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01S5/323

    Abstract: To present a manufacturing method of semiconductor device capable of forming a homogeneous and highly reproducible gallium nitride crystal, comprising the steps of forming a zinc oxide layer on a monocrystalline substrate, forming a first gallium nitride crystal in a temperature range from 0 DEG C. to 900 DEG C., and forming a second gallium nitride crystal in a temperature range from 900 DEG C. to 2000 DEG C.

    SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    6.
    发明专利
    SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效

    公开(公告)号：JP2000200946A

    公开(公告)日：2000-07-18

    申请号：JP30171299

    申请日：1999-10-22

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： NAKAMURA SHINJI ,  YURI MASAAKI ,  ORITA KENJI

    IPC: H01S5/30 ,  H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To manufacture a highly precise waveguide structure with good control and thereby enable single transverse mode oscillation, by forming a second conductive type first semiconductor layer, whose Al composition ratio is smaller than that of a first conductive type etching stop layer on the etch stopping layer. SOLUTION: Since an etch stopping layer 17 whose Al composition ratio is larger than that of an n-type current blocking layer 12 is formed immediately below the n-type current blocking layer 12, etching of the n-type current blocking layer 12 can be blocked in the etch stopping layer 17. Therefore, it is possible to accurately and uniformly control the etching depth of the n-type current blocking layer 12 and to obtain a waveguide structure which is more precise than a conventional one. A first p-type clad layer 8 whose Al composition ratio is smaller than that of the etch stopping layer 17 is formed immediately below the etching stop layer 17. Since the lower the Al composition ratio is, the is larger the refractive index, therefore, light confinement can be carried out well in this structure.

    SEMICONDUCTOR DEVICE
    8.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2000031537A

    公开(公告)日：2000-01-28

    申请号：JP12214199

    申请日：1999-04-28

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIDA MASAHIRO ,  KONDO OSAMU ,  YURI MASAAKI ,  ITO KUNIO

    IPC: H01L21/205 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To improve characteristic of a semiconductor device by reducing nitrogen vacancy in a semiconductor layer, in a semiconductor device using a semiconductor layer composed of nitride. SOLUTION: A semiconductor layer 8 composed of GaN containing arsenic is formed on a substrate 7, and a semiconductor element which is an active element such as a field effect transistor and a bipolar transistor, or a passive element such as a capacitor and a resistor is formed on the semiconductor layer 8. Concerning quantities of nitrogen and arsenic contained in compound forming the semiconductor layer 8, quantity of nitrogen is made greater than that of arsenic.

    SEMICONDUCTOR LASER DEVICE
    10.
    发明专利
    SEMICONDUCTOR LASER DEVICE 失效

    公开(公告)号：JPH10190126A

    公开(公告)日：1998-07-21

    申请号：JP34695196

    申请日：1996-12-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： TAKAYAMA TORU ,  KONDO OSAMU ,  YURI MASAAKI ,  YOSHIKAWA AKIO

    IPC: H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To prevent a semiconductor laser device which has a small oscillation threshold current value and a small operating current value, can prevent the deterioration of its temperature characteristic, and does not produce high noise. SOLUTION: A semiconductor laser is constituted by successively forming a first light guide layer 5 composed of InV1 (Ga1- Y1 AlY1 )1- V1 P of a first conductivity, a second light guide layer 6 composed of Ga1- Y2 AlY2 As of the first conductivity, a current blocking layer 7 which has a current passing window 7a and is composed of Ga1- ZAlZAs of a second conductivity, and a third light guide layer 8 which is composed of Ga1- Y3 AlY3 As of the first conductivity and fills up the current passing window 7a of the current blocking layer 7 on an active layer 4 composed of InV(Ga1- XAlX)1- VP, where V, V1, X, Y1, Y2, Y3, and Z are respectively set to satisfy the following relations: 0.45

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