Light source collector module with gic mirror and tin rod euv/lpp target system
    1.
    发明专利
    Light source collector module with gic mirror and tin rod euv/lpp target system 有权
    光源收集器模块,带有GIC镜和TINROD EUV / LPP目标系统

    公开(公告)号:JP2012049529A

    公开(公告)日:2012-03-08

    申请号:JP2011178026

    申请日:2011-08-16

    Abstract: PROBLEM TO BE SOLVED: To provide a light source collector module that is more inexpensive, simpler, tougher and can be generally commercially implemented in an EUV lithography system using a laser generation plasma type EUV source.SOLUTION: Laser generation plasma (LPP) is formed by using an LPP target system 40 having a light source portion 41 and a target portion 42. A pulse laser beam 13 from the light source portion 41 is applied to an Sn rod rotating in the target portion 42. A GIC mirror Mg is disposed relatively to LPP, receives EUV at an incident end, and focuses the received EUV at an intermediate focus point IF adjacent to an emission end. In order to increase the amount of EUV which is supplied to the intermediate focus point IF and further/or guided to an illuminator at the downstream side, a radiation collection enhancement device having at least a funnel portion may be used.

    Abstract translation: 要解决的问题:提供一种在EUV光刻系统中使用激光产生等离子体型EUV源的成本更低,更简单,更坚固并且通常可商业实现的光源收集器模块。 解决方案:通过使用具有光源部分41和目标部分42的LPP靶系统40来形成激光产生等离子体(LPP)。将来自光源部分41的脉冲激光束13施加到旋转的Sn棒 在目标部分42中.GIC反射镜Mg相对于LPP设置,在入射端接收EUV,并将接收的EUV聚焦在与发射端相邻的中间焦点IF处。 为了增加提供给中间焦点IF并进一步/或被引导到下游侧的照明器的EUV的量,可以使用至少具有漏斗部分的辐射收集增强装置。 版权所有(C)2012,JPO&INPIT

    Source-collector module with gic mirror and xenon ice euv lpp target system
    2.
    发明专利
    Source-collector module with gic mirror and xenon ice euv lpp target system 审中-公开
    带有GIC镜和XENON ICE EUV LPP目标系的源收集器模块

    公开(公告)号:JP2012054551A

    公开(公告)日:2012-03-15

    申请号:JP2011185261

    申请日:2011-08-26

    Abstract: PROBLEM TO BE SOLVED: To realize a simple and highly cost-effective LPP system EUV light source.SOLUTION: An LPP is formed using an LPP target system having a light source portion and a target portion. A pulsed laser beam 13 from the light source portion irradiates a Xenon ice 132F supplied by the target portion to an irradiation position. A GIC mirror is arranged relative to the LPP to receive an EUV at an input end and focus the received EUV at an intermediate focus adjacent to an output end. A radiation collection enhancement device having at least one funnel part may be used to increase the amount of the EUV supplied to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes a source-collector module (SOCOMO) is also disclosed.

    Abstract translation: 要解决的问题:实现一种简单而高性价比的LPP系统EUV光源。 解决方案:使用具有光源部分和目标部分的LPP目标系统形成LPP。 来自光源部分的脉冲激光束13将由目标部分提供的氙气冰132F照射到照射位置。 相对于LPP布置GIC反射镜以在输入端接收EUV,并将接收到的EUV聚焦在与输出端相邻的中间焦点处。 可以使用具有至少一个漏斗部分的辐射收集增强装置来增加提供给中间焦点和/或被引导到下游照明器的EUV的量。 还公开了利用源极集电极模块(SOCOMO)的EUV光刻系统。 版权所有(C)2012,JPO&INPIT

    Source collector module with gic mirror and liquid xenon euv/lpp target system
    3.
    发明专利
    Source collector module with gic mirror and liquid xenon euv/lpp target system 有权
    源集电器模块与GIC镜和液体XENON EUV / LPP目标系统

    公开(公告)号:JP2012049526A

    公开(公告)日:2012-03-08

    申请号:JP2011170566

    申请日:2011-08-03

    Abstract: PROBLEM TO BE SOLVED: To provide a source collector module which is inexpensive, simple and tough.SOLUTION: Grazing incidence collectors (GIC) mirrors M1, M2 are used in a source collector module for generating laser generating plasma (LPP) that emits EUV radiation. LPP is formed by using an LPP target system having a light source portion and a target portion. A pulse laser beam from the light source portion is applied to liquid xenon in the target portion. The GIC mirror is arranged relatively to LPP, receives EUV 30 at an incident end thereof and focuses the received EUV at an intermediate focus point IF adjacent to an emission end thereof. In order to increase the amount of EUV to be supplied to the intermediate focus point and further/or guided to an illuminator at the downstream side, a radiation collection enhancing device having at least one funnel portion is used.

    Abstract translation: 要解决的问题:提供廉价,简单和坚韧的源收集器模块。 解决方案:用于产生发射EUV辐射的激光产生等离子体(LPP)的源极收集器模块中使用掠射入射收集器(GIC)反射镜M1,M2。 LPP通过使用具有光源部分和目标部分的LPP目标系统形成。 将来自光源部分的脉冲激光束施加到目标部分中的液体氙。 GIC反射镜相对于LPP布置,在其入射端接收EUV 30,并将接收的EUV聚焦在与其发射端相邻的中间焦点IF处。 为了增加提供给中间聚焦点的EUV的量并且进一步/或被引导到下游侧的照明器,使用具有至少一个漏斗部分的辐射收集增强装置。 版权所有(C)2012,JPO&INPIT

    Source-collector module with gic mirror and tin wire euv lpp target system
    4.
    发明专利
    Source-collector module with gic mirror and tin wire euv lpp target system 审中-公开
    采用GIC镜和锡线EUV LPP目标系统的收集器模块

    公开(公告)号:JP2012054548A

    公开(公告)日:2012-03-15

    申请号:JP2011179986

    申请日:2011-08-19

    Abstract: PROBLEM TO BE SOLVED: To provide a source-collector module (SOCOMO) which is less expensive, less complex, more robust and more commercially viable in general.SOLUTION: The present invention relates to the SOCOMO for generating a laser-produced plasma (LPP) that emits EUV, and a grazing-incidence collector (GIC) mirror having an input end and an output end and arranged relative to the LPP. The LPP is formed using an LPP target system having a light source portion and a target portion. A pulsed laser beam from the light source portion irradiates a Sn wire supplied by the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV at the input end and focus the received EUV at an intermediate focus adjacent to the output end. A radiation collection enhancement device having at least one funnel part may be used to increase the amount of the EUV supplied to the intermediate focus and/or directed to a downstream illuminator.

    Abstract translation: 要解决的问题:提供一种较便宜,较不复杂,更强大和更商业上可行的源收集器模块(SOCOMO)。 解决方案:本发明涉及用于产生发射EUV的激光产生等离子体(LPP)的SOCOMO和具有输入端和输出端并且相对于LPP布置的放电入射收集器(GIC)反射镜 。 使用具有光源部分和目标部分的LPP目标系统形成LPP。 来自光源部的脉冲激光束照射由靶部供给的Sn线。 GIC反射镜相对于LPP布置以在输入端接收EUV,并将接收的EUV聚焦在与输出端相邻的中间焦点。 可以使用具有至少一个漏斗部分的辐射收集增强装置来增加提供给中间焦点和/或被引导到下游照明器的EUV的量。 版权所有(C)2012,JPO&INPIT

    Gic mirror and source-collector module having tin vapor lpp target system
    5.
    发明专利
    Gic mirror and source-collector module having tin vapor lpp target system 有权
    具有TIN VAPOR LPP目标系统的GIC镜和源收集器模块

    公开(公告)号:JP2012023036A

    公开(公告)日:2012-02-02

    申请号:JP2011141268

    申请日:2011-06-24

    Abstract: PROBLEM TO BE SOLVED: To provide a source-collector module for generating laser-produced plasma radiating EUV.SOLUTION: A source-collector module (SOCOMO) 100 for generating laser-produced plasma (LPP) radiating EUV includes a grazing-incidence collector (GIC) mirror MG having an incident end 3 and an emission end 5 and disposed in relation to an LPP 24. The LPP 24 is formed using an LPP target system including a light source part and a target part. A pulse laser beam from the light source part irradiates vapor Sn from a Sn vapor source of the target part. The GIC mirror MG is disposed in relation to the LPP 24, receives the EUV at the incident end 3, and focuses the received EUV on an intermediate focus IF adjacent to the emission end 5. For increasing an amount of the EUV supplied to the intermediate focus IF, a radiation collection enhancement device may be used. Moreover, an EUV lithography system employing the SOCOMO is also disclosed.

    Abstract translation: 要解决的问题:提供用于产生激光产生的等离子体辐射EUV的源极 - 集电极模块。 解决方案:用于产生激光产生的等离子体(LPP)辐射EUV的源极集电极模块(SOCOMO)100包括具有入射端3和发射端5的放电入射收集器(GIC) LPP24使用包括光源部分和目标部分的LPP目标系统形成。 来自光源部的脉冲激光束从目标部的Sn蒸汽源照射蒸气Sn。 GIC镜MG相对于LPP24设置,在入射端3处接收EUV,并将接收的EUV聚焦在与发射端5相邻的中间聚焦IF上。为了增加提供给中间体的EUV的量 聚焦IF,可以使用辐射收集增强装置。 此外,还公开了采用SOCOMO的EUV光刻系统。 版权所有(C)2012,JPO&INPIT

    Light source-collector module with gic mirror, and lpp euv light source
    6.
    发明专利
    Light source-collector module with gic mirror, and lpp euv light source 有权
    光源收集器模块与GIC镜和LPP EUV光源

    公开(公告)号:JP2011142323A

    公开(公告)日:2011-07-21

    申请号:JP2011000143

    申请日:2011-01-04

    Abstract: PROBLEM TO BE SOLVED: To provide a more inexpensive, simpler and more robust system when a SOCOMO system is incorporated in an EUV lithography system.
    SOLUTION: An LPP target system 40 includes an Sn pellet (droplet) source 20. The Sn pellet (droplet) source 20 discharges an Sn pellet (droplet) 22. The Sn pellet (droplet) 22 is a pellet of relatively low mass, and generates substantially isotropic EUV 30 when irradiated with a laser light beam 13. Consequently, a multilayer shell type GIC mirror MG can be disposed between an LPP 24 and an intermediate focus IF along an optical axis A1. A lens 17 converges the laser light beam 13 on the focus F 13.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题:当SOCOMO系统结合在EUV光刻系统中时,提供更便宜,更简单和更强大的系统。 解决方案:LPP靶系统40包括Sn颗粒(液滴)源20.Sn颗粒(液滴)源20排出Sn颗粒(液滴)22。Sn颗粒(液滴)22是相对较低的颗粒 并且当用激光束13照射时产生基本上各向同性的EUV 30.因此,多层壳型GIC反射镜MG可以沿着光轴A1设置在LPP 24和中间聚焦IF之间。 透镜17将激光束13会聚在焦点F 13上。版权所有:(C)2011,JPO&INPIT

    Quellkollektormodul mit GIC-Spiegel- und Xenonflüssigkeits-EUV-LPP-Target-System

    公开(公告)号:DE102011111244B4

    公开(公告)日:2020-02-06

    申请号:DE102011111244

    申请日:2011-08-22

    Abstract: Quellkollektormodul für ein Extrem-Ultraviolett-Lithographiesystem, umfassend:einen Laser, der einen gepulsten Laserstrahl erzeugt;einen Faltspiegel, angeordnet entlang einer Quellkollektormodulachse und aufgebaut, um den gepulsten Laserstrahl aufzunehmen und den gepulsten Laserstrahl entlang der Quellkollektormodulachse in einer ersten Richtung zu reflektieren;eine Xenonflüssigkeitsquelle, aufgebaut, um Xenonflüssigkeit bei einer Bestrahlungsposition bereitzustellen, wo die Xenonflüssigkeit durch den gepulsten Laserstrahl bestrahlt wird, wodurch ein lasererzeugtes Plasma geschaffen wird, das EUV-Strahlung in einer zweiten Richtung erzeugt, die im Allgemeinen entgegengesetzt zur ersten Richtung ist; undeinen Kollektorspiegel mit streifendem Einfall mit einem Eintrittsende und einem Austrittsende und angeordnet, um die EUV-Strahlung am Eintrittsende aufzunehmen und die aufgenommene EUV-Strahlung am Zwischenfokus, angrenzend an das Austrittsende, zu fokussieren, wobei dasQuellkollektormodul weiterhin umfasst:ein Xenon-Masseflusssystem, aufgebaut, um einen abgemessenen Fluss an Xenongas durch eine Gasflussleitung bereitzustellen;eine Xenon-Verflüssigungseinheit, die sich mit dem Xenon-Masseflusssystem über die Gasflussleitung in Flüssigkeitsaustausch zulassender Verbindung befindet, und aufgebaut ist, um das Xenongas zu verflüssigen, um Xenonflüssigkeit zu bilden; undeine Xenon-Wiedergewinnungseinheit, die sich mit der Xenon-Verflüssigungseinheit über eine Leitung in Flüssigkeitsaustausch zulassender Verbindung befindet, die es der Xenonflüssigkeit ermöglicht, von der Xenon-Verflüssigungseinheit zur Xenon-Wiedergewinnungseinheit zu fließen, wobei die Leitung eine Apertur umfasst, die es dem Laserstrahl ermöglicht, auf die Xenonflüssigkeit bei der Bestrahlungsposition aufzutreffen.

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