Abstract:
PROBLEM TO BE SOLVED: To provide a light source collector module that is more inexpensive, simpler, tougher and can be generally commercially implemented in an EUV lithography system using a laser generation plasma type EUV source.SOLUTION: Laser generation plasma (LPP) is formed by using an LPP target system 40 having a light source portion 41 and a target portion 42. A pulse laser beam 13 from the light source portion 41 is applied to an Sn rod rotating in the target portion 42. A GIC mirror Mg is disposed relatively to LPP, receives EUV at an incident end, and focuses the received EUV at an intermediate focus point IF adjacent to an emission end. In order to increase the amount of EUV which is supplied to the intermediate focus point IF and further/or guided to an illuminator at the downstream side, a radiation collection enhancement device having at least a funnel portion may be used.
Abstract:
PROBLEM TO BE SOLVED: To realize a simple and highly cost-effective LPP system EUV light source.SOLUTION: An LPP is formed using an LPP target system having a light source portion and a target portion. A pulsed laser beam 13 from the light source portion irradiates a Xenon ice 132F supplied by the target portion to an irradiation position. A GIC mirror is arranged relative to the LPP to receive an EUV at an input end and focus the received EUV at an intermediate focus adjacent to an output end. A radiation collection enhancement device having at least one funnel part may be used to increase the amount of the EUV supplied to the intermediate focus and/or directed to a downstream illuminator. An EUV lithography system that utilizes a source-collector module (SOCOMO) is also disclosed.
Abstract:
PROBLEM TO BE SOLVED: To provide a source collector module which is inexpensive, simple and tough.SOLUTION: Grazing incidence collectors (GIC) mirrors M1, M2 are used in a source collector module for generating laser generating plasma (LPP) that emits EUV radiation. LPP is formed by using an LPP target system having a light source portion and a target portion. A pulse laser beam from the light source portion is applied to liquid xenon in the target portion. The GIC mirror is arranged relatively to LPP, receives EUV 30 at an incident end thereof and focuses the received EUV at an intermediate focus point IF adjacent to an emission end thereof. In order to increase the amount of EUV to be supplied to the intermediate focus point and further/or guided to an illuminator at the downstream side, a radiation collection enhancing device having at least one funnel portion is used.
Abstract:
PROBLEM TO BE SOLVED: To provide a source-collector module (SOCOMO) which is less expensive, less complex, more robust and more commercially viable in general.SOLUTION: The present invention relates to the SOCOMO for generating a laser-produced plasma (LPP) that emits EUV, and a grazing-incidence collector (GIC) mirror having an input end and an output end and arranged relative to the LPP. The LPP is formed using an LPP target system having a light source portion and a target portion. A pulsed laser beam from the light source portion irradiates a Sn wire supplied by the target portion. The GIC mirror is arranged relative to the LPP to receive the EUV at the input end and focus the received EUV at an intermediate focus adjacent to the output end. A radiation collection enhancement device having at least one funnel part may be used to increase the amount of the EUV supplied to the intermediate focus and/or directed to a downstream illuminator.
Abstract:
PROBLEM TO BE SOLVED: To provide a source-collector module for generating laser-produced plasma radiating EUV.SOLUTION: A source-collector module (SOCOMO) 100 for generating laser-produced plasma (LPP) radiating EUV includes a grazing-incidence collector (GIC) mirror MG having an incident end 3 and an emission end 5 and disposed in relation to an LPP 24. The LPP 24 is formed using an LPP target system including a light source part and a target part. A pulse laser beam from the light source part irradiates vapor Sn from a Sn vapor source of the target part. The GIC mirror MG is disposed in relation to the LPP 24, receives the EUV at the incident end 3, and focuses the received EUV on an intermediate focus IF adjacent to the emission end 5. For increasing an amount of the EUV supplied to the intermediate focus IF, a radiation collection enhancement device may be used. Moreover, an EUV lithography system employing the SOCOMO is also disclosed.
Abstract:
PROBLEM TO BE SOLVED: To provide a more inexpensive, simpler and more robust system when a SOCOMO system is incorporated in an EUV lithography system. SOLUTION: An LPP target system 40 includes an Sn pellet (droplet) source 20. The Sn pellet (droplet) source 20 discharges an Sn pellet (droplet) 22. The Sn pellet (droplet) 22 is a pellet of relatively low mass, and generates substantially isotropic EUV 30 when irradiated with a laser light beam 13. Consequently, a multilayer shell type GIC mirror MG can be disposed between an LPP 24 and an intermediate focus IF along an optical axis A1. A lens 17 converges the laser light beam 13 on the focus F 13. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
Quellkollektormodul für ein Extrem-Ultraviolett-Lithographiesystem, umfassend:einen Laser, der einen gepulsten Laserstrahl erzeugt;einen Faltspiegel, angeordnet entlang einer Quellkollektormodulachse und aufgebaut, um den gepulsten Laserstrahl aufzunehmen und den gepulsten Laserstrahl entlang der Quellkollektormodulachse in einer ersten Richtung zu reflektieren;eine Xenonflüssigkeitsquelle, aufgebaut, um Xenonflüssigkeit bei einer Bestrahlungsposition bereitzustellen, wo die Xenonflüssigkeit durch den gepulsten Laserstrahl bestrahlt wird, wodurch ein lasererzeugtes Plasma geschaffen wird, das EUV-Strahlung in einer zweiten Richtung erzeugt, die im Allgemeinen entgegengesetzt zur ersten Richtung ist; undeinen Kollektorspiegel mit streifendem Einfall mit einem Eintrittsende und einem Austrittsende und angeordnet, um die EUV-Strahlung am Eintrittsende aufzunehmen und die aufgenommene EUV-Strahlung am Zwischenfokus, angrenzend an das Austrittsende, zu fokussieren, wobei dasQuellkollektormodul weiterhin umfasst:ein Xenon-Masseflusssystem, aufgebaut, um einen abgemessenen Fluss an Xenongas durch eine Gasflussleitung bereitzustellen;eine Xenon-Verflüssigungseinheit, die sich mit dem Xenon-Masseflusssystem über die Gasflussleitung in Flüssigkeitsaustausch zulassender Verbindung befindet, und aufgebaut ist, um das Xenongas zu verflüssigen, um Xenonflüssigkeit zu bilden; undeine Xenon-Wiedergewinnungseinheit, die sich mit der Xenon-Verflüssigungseinheit über eine Leitung in Flüssigkeitsaustausch zulassender Verbindung befindet, die es der Xenonflüssigkeit ermöglicht, von der Xenon-Verflüssigungseinheit zur Xenon-Wiedergewinnungseinheit zu fließen, wobei die Leitung eine Apertur umfasst, die es dem Laserstrahl ermöglicht, auf die Xenonflüssigkeit bei der Bestrahlungsposition aufzutreffen.
Abstract:
Source-collector modules for use with EUV lithography systems are disclosed, wherein the source-collector modules employ a laser-produced plasma EUV radiation source and a grazing-incidence collector. The EUV radiation source is generated by first forming an under-dense plasma, and then irradiating the under-dense plasma with infrared radiation of sufficient intensity to create a final EUV-emitting plasma. The grazing incidence collector can include a grating configured to prevent infrared radiation from reaching the intermediate focus. Use of debris mitigation devices preserves the longevity of operation of the source-collector modules.