SENSOR DEVICE AND METHOD OF MANUFACTURE
    1.
    发明申请

    公开(公告)号:US20200075466A1

    公开(公告)日:2020-03-05

    申请号:US16557224

    申请日:2019-08-30

    Abstract: A method of manufacturing a sensor device (100) comprises providing (200) a package (102) having a first die-receiving subframe volume (104) separated from a second die-receiving subframe volume (106) by a partition wall (116). An elongate sensor element (120) is disposed (202) within the package (102) so as to bridge the first and second subframe volumes (104, 106) and to overlie the partition wall (116). The elongate sensor element (120) resides substantially in the first subframe volume (104) and partially in the second subframe volume (106). The elongate sensor element (120) is electrically connected within the second subframe volume (106).

    PRESSURE SENSOR DEVICE AND METHOD OF SENSING PRESSURE

    公开(公告)号:US20200072692A1

    公开(公告)日:2020-03-05

    申请号:US16557213

    申请日:2019-08-30

    Abstract: A pressure sensor device comprises a device package (110) arranged to define a cavity (116) having an opening for fluid communication with an internal volume thereof. The cavity (116) comprises a side wall (114, 115). An elongate pressure sensor element (100) is provided and has a proximal end (120) and a distal end (122). The side wall (114, 115) is arranged to hold fixedly the proximal end (120) of the pressure sensor element (100) therein so that the pressure sensor element (100) is cantilever-suspended from the side wall (114, 115) within the cavity (116).

    TMAP SENSOR SYSTEMS AND METHODS FOR MANUFACTURING THOSE
    4.
    发明申请
    TMAP SENSOR SYSTEMS AND METHODS FOR MANUFACTURING THOSE 有权
    TMAP传感器系统及其制造方法

    公开(公告)号:US20130285167A1

    公开(公告)日:2013-10-31

    申请号:US13870209

    申请日:2013-04-25

    Abstract: A pressure sensor system comprising a pressure sensor chip is disclosed. The pressure sensor chip comprises a sensing side where pressure sensing is performed and one or more interconnections where electrical connections are made at the other side of the chip. The pressure sensor comprising an integrated circuit (1) forming a substrate, the substrate comprising a membrane shaped portion adapted for being exposed to the pressure, the integrated circuit (1) comprising both pressure signal sensing components and pressure signal processing components.

    Abstract translation: 公开了一种包括压力传感器芯片的压力传感器系统。 压力传感器芯片包括执行压力感测的感测侧和在芯片的另一侧进行电连接的一个或多个互连。 所述压力传感器包括形成衬底的集成电路(1),所述衬底包括适于暴露于所述压力的膜状部分,所述集成电路(1)包括压力信号感测部件和压力信号处理部件。

    SEMICONDUCTOR STRESS SENSOR
    5.
    发明申请

    公开(公告)号:US20210175410A1

    公开(公告)日:2021-06-10

    申请号:US17111871

    申请日:2020-12-04

    Abstract: A piezo-resistor sensor includes a diffusion of a first conductivity type in a well of an opposite second type, contacts with islands in the diffusion, interconnects with the contacts, and a shield covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts. Each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, and each island is at a side covered by its interconnect. A guard ring of the second type is around the diffusion. The shield covers the well between the diffusion and the ring and the edge of the ring facing the diffusion. If a gap between the shield and the interconnect is present, the ring bridges this gap, and/or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

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