公开(公告)号：SG71203A1

公开(公告)日：2000-03-21

申请号：SG1999001655

申请日：1999-04-07

Applicant: MICROCOATING TECHNOLOGIES INC

Inventor： HUNT ANDREW T ,  SHANMUGHAM SUBRAMANIAM ,  DANIELSON WILLIAM D ,  LUTEN HENRY A ,  HWANG TZYY JIUAN ,  DESHPANDE GIRISH

IPC: C23C16/44 ,  B05D1/08 ,  C23C16/14 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/448 ,  C23C16/453 ,  C23C16/455 ,  C23C16/50 ,  C23C16/00

Abstract: An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones (26, 28) involved in providing CVD coatings by establishing a barrier zone (30) wherein gases flowing from a reaction zone (26) and deposition zone (28) to the ambient atmosphere are made to flow at a velocity of at least 15.24 m/min. Coatings can thus be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.

公开(公告)号：CA2269862C

公开(公告)日：2003-09-16

申请号：CA2269862

申请日：1999-04-26

Applicant: MICROCOATING TECHNOLOGIES INC

Inventor： DANIELSON WILLIAM D ,  LUTEN HENRY A ,  HUNT ANDREW T ,  SHANMUGHAM SUBRAMANIAM ,  DESHPANDE GIRISH ,  HWANG TZYY JIUAN

IPC: C23C16/44 ,  B05D1/08 ,  C23C16/14 ,  C23C16/18 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/448 ,  C23C16/453 ,  C23C16/455 ,  C23C16/50

Abstract: An improved chemical vapor deposition apparatus and procedure is disclosed. The technique provides improved shielding of the reaction and deposition zones involved in providing CVD coatings, whereby coatings can be produced, at atmospheric pressure, of materials which are sensitive to components in the atmosphere on substrates which are sensitive to high temperatures and which are too large, or inconvenient, to process in vacuum or similar chambers. The improved technique can be used with various energy sources and is particularly compatible with Combustion Chemical Vapor Deposition (CCVD) techniques.