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    Systems and methods for delivering atomized fluids
    2.
    发明授权
    Systems and methods for delivering atomized fluids 有权
    用于输送雾化流体的系统和方法

    公开(公告)号：US6390076B2

    公开(公告)日：2002-05-21

    申请号：US85134901

    申请日：2001-05-08

    Applicant: MICROCOATING TECHNOLOGIES INC

    Inventor： HUNT ANDREW T

    IPC: F02M53/02 ,  F02M53/06 ,  F02G5/00

    CPC classification number: F02M53/06 ,  F02M53/02 ,  Y02T10/16

    Abstract: A method for causing a very fine atomization or vaporization of a liquid or liquid-like fluid, where the resulting atomized or vaporized solution is entered into engine, instrument or area for the fluid to be in mixed. The ability of the near supercritical atomizer to produce very fine droplets of a wide range of liquids without any aspirant is very important for number of industrial applications. Especially when the drop size can be so finely controlled. Industries needing such fine atomization include applications such as combustion, engines, scientific equipment, chemical processing, waste disposal control, cleaning, etching, insect control, surface modification, humidification and vaporization. It is important in these applications not to cause a decomposition of the material being atomized. Staying below the supercritical point normally enables no decomposition and/or no precipitation of components within the liquid or fluid in most applications, but a very fine atomization is obtained without the need of any aspirant.

    Abstract translation: 一种使液体或液体状流体非常精细地雾化或蒸发的方法，其中所得到的雾化或蒸发的溶液进入发动机，仪器或区域以使流体混合。 接近超临界雾化器能够生产出非常细微的液滴，无需任何预期的液体，对于工业应用的数量来说是非常重要的。 特别是当液滴尺寸如此精细地控制时。 需要这种精细雾化的行业包括燃烧，发动机，科学设备，化学处理，废物处理控制，清洁，蚀刻，昆虫控制，表面改性，加湿和蒸发等应用。 在这些应用中重要的是不会导致被雾化的材料的分解。 通常在超临界点以下，在大多数应用中通常不会使液体或流体中的组分发生分解和/或不析出，而是无需任何吸入剂即可获得非常精细的雾化。

    EPITAXIAL THIN FILMS
    8.
    发明专利
    EPITAXIAL THIN FILMS 未知

    公开(公告)号：CA2359710A1

    公开(公告)日：2000-07-20

    申请号：CA2359710

    申请日：2000-01-12

    Applicant: MICROCOATING TECHNOLOGIES INC

    Inventor： HWANG TZYY-JIUAN JAN ,  SHOUP SHARA S ,  LIN WEN-YI ,  DESHPANDE GIRISH ,  COUSINS DONALD H ,  HUNT ANDREW T

    IPC: C30B29/22 ,  B01D71/02 ,  H01B20060101 ,  H01B1/00 ,  H01G4/06 ,  H01G4/33 ,  H01L21/20 ,  H01L39/24 ,  H01L49/02 ,  H01M8/02

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separati on membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin fil ms for electrolytes and electrode formation in SOFCs results in densification f or pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. Thes e semipermeable membranes are formed by high-quality, dense, gas-tight, pinhol e free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are al so taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for t he formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

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