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    EPITAXIAL THIN FILMS
    1.
    发明专利
    EPITAXIAL THIN FILMS 未知

    公开(公告)号：CA2359710A1

    公开(公告)日：2000-07-20

    申请号：CA2359710

    申请日：2000-01-12

    Applicant: MICROCOATING TECHNOLOGIES INC

    Inventor： HWANG TZYY-JIUAN JAN ,  SHOUP SHARA S ,  LIN WEN-YI ,  DESHPANDE GIRISH ,  COUSINS DONALD H ,  HUNT ANDREW T

    IPC: C30B29/22 ,  B01D71/02 ,  H01B20060101 ,  H01B1/00 ,  H01G4/06 ,  H01G4/33 ,  H01L21/20 ,  H01L39/24 ,  H01L49/02 ,  H01M8/02

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separati on membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin fil ms for electrolytes and electrode formation in SOFCs results in densification f or pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. Thes e semipermeable membranes are formed by high-quality, dense, gas-tight, pinhol e free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are al so taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for t he formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

    EPITAXIAL THIN FILMS
    3.
    发明专利
    EPITAXIAL THIN FILMS 未知

    公开(公告)号：CA2359710C

    公开(公告)日：2008-09-02

    申请号：CA2359710

    申请日：2000-01-12

    Applicant: MICROCOATING TECHNOLOGIES INC

    Inventor： HWANG TZYY-JIUAN JAN ,  DESHPANDE GIRISH ,  HUNT ANDREW T ,  COUSINS DONALD H ,  LIN WEN-YI ,  SHOUP SHARA S

    IPC: C30B29/22 ,  H01L49/02 ,  B01D71/02 ,  C30B29/32 ,  H01B20060101 ,  H01B1/00 ,  H01G4/06 ,  H01G4/33 ,  H01L21/20 ,  H01L39/24 ,  H01M8/02 ,  H01M8/10

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

    EPITAXIAL THIN FILMS
    9.
    发明申请
    EPITAXIAL THIN FILMS 审中-公开
    外来薄膜

    公开(公告)号：WO0042621A2

    公开(公告)日：2000-07-20

    申请号：PCT/US0000824

    申请日：2000-01-12

    Applicant: MICROCOATING TECHNOLOGIES INC ,  HUNT ANDREW T ,  DESHPANDE GIRISH ,  COUSINS DONALD ,  HWANG TZYY JIUAN JAN ,  LIN WEN YI ,  SHOUP SHARA S

    Inventor： HUNT ANDREW T ,  DESHPANDE GIRISH ,  COUSINS DONALD ,  HWANG TZYY-JIUAN JAN ,  LIN WEN-YI ,  SHOUP SHARA S

    IPC: C30B29/22 ,  B01D71/02 ,  H01B20060101 ,  H01B1/00 ,  H01G4/06 ,  H01G4/33 ,  H01L21/20 ,  H01L39/24 ,  H01L49/02 ,  H01M8/02 ,  H01B

    CPC classification number: H01L39/2461

    Abstract: Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

    Abstract translation: 公开了用作高温超导体的缓冲层的外延薄膜，固体氧化物燃料电池（SOFC）中的电解质，电子装置中的气体分离膜或介电材料。 通过使用CCVD，CACVD或任何其它合适的沉积工艺，可以形成具有无孔，理想晶界和致密结构的外延膜。 公开了几种不同类型的材料用作高温超导体中的缓冲层。 此外，在SOFC中使用电解质外延薄膜和电极形成导致无孔和理想的晶界/界面微观结构的致密化。 还公开了用于生产氧气和氢气的气体分离膜。 这些半透膜由多孔陶瓷基板上的高质量，致密，气密，无针孔的微小尺度的混合导电氧化物层形成。 本文还介绍了作为电容器中的介电材料的外延薄膜。 根据电容值的物理结构和介电常数，使用电容器。 本发明的外延薄膜形成具有极高介电常数的低损耗介电层。 这种高介电常数允许形成可以通过在它们的电极之间施加直流偏压来调整其电容的电容器。

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