中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.022 seconds)

    METHODS OF FORMING PARTS USING LASER MACHINING
    2.
    发明申请
    METHODS OF FORMING PARTS USING LASER MACHINING 审中-公开
    使用激光加工形成零件的方法

    公开(公告)号：WO2014113508A3

    公开(公告)日：2014-09-12

    申请号：PCT/US2014011738

    申请日：2014-01-15

    Applicant: MICROFABRICA INC

    Inventor： VEERAMANI ARUN S ,  JENSEN HEATH A ,  FRODIS URI ,  WIITA CHRISTOPHER G ,  LOCKARD MICHAEL S ,  BOGUSLAVSKY IRINA ,  LEMBRIKOV PAVEL ,  SMALLEY DENNIS R ,  CHEN RICHARD T

    IPC: B23K26/36 ,  B23K26/38 ,  B23K26/40 ,  G01R3/00

    CPC classification number: B23K26/38 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  G01R1/06738 ,  G01R1/06744 ,  G01R3/00

    Abstract: Embodiments are directed to the formation micro-scale or millimeter scale structures or method of making such structures wherein the structures are formed from at least one sheet structural material and may include additional sheet structural materials or deposited structural materials wherein all or a portion of the patterning of the structural materials occurs via laser cutting. In some embodiments, selective deposition is used to provide a portion of the patterning. In some embodiments the structural material or structural materials are bounded from below by a sacrificial bridging material (e.g. a metal) and possibly from above by a sacrificial capping material (e.g. a metal).

    Abstract translation: 实施例涉及形成微尺度或毫米级结构或制造这种结构的方法，其中结构由至少一个片状结构材料形成，并且可以包括附加的片状结构材料或沉积的结构材料，其中所有或部分图案化 的结构材料通过激光切割发生。 在一些实施例中，使用选择性沉积来提供图案化的一部分。 在一些实施例中，结构材料或结构材料由牺牲桥接材料（例如金属）从下方限定，并且可能由上面由牺牲性封盖材料（例如金属）限定。

    METHODS AND APPARATUS FOR FORMING MULTI-LAYER STRUCTURES USING ADHERED MASKS
    3.
    发明申请
    METHODS AND APPARATUS FOR FORMING MULTI-LAYER STRUCTURES USING ADHERED MASKS 审中-公开
    使用附加掩模形成多层结构的方法和装置

    公开(公告)号：WO2004101857A2

    公开(公告)日：2004-11-25

    申请号：PCT/US2004014360

    申请日：2004-05-07

    Applicant: MICROFABRICA INC

    Inventor： COHEN ADAM L ,  THOMASSIAN JILL R ,  LOCKARD MICHAEL S ,  KILGO MARVIN M III ,  FRODIS URI ,  SMALLEY DENNIS R

    IPC: C25D1/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/14 ,  C25D5/48 ,  C25D5/50 ,  C25D

    CPC classification number: C25D1/003 ,  C25D1/00 ,  C25D1/20 ,  C25D5/02 ,  C25D5/022 ,  C25D5/10 ,  C25D5/14 ,  C25D5/48 ,  C25D5/50

    Abstract: Numerous electrochemical fabrication methods and apparatus are provided for producing multi-layer structures (e.g. having meso-scale or micro-scale features) from a plurality of layers of deposited materials using adhered masks (e.g. formed from liquid photoresist or dry film), where two or more materials may be provided per layer where at least one of the materials is a structural material and one or more of any other materials may be a sacrificial material which will be removed after formation of the structure. Materials may comprise conductive materials that are electrodeposited or deposited in an electroless manner. In some embodiments special care is undertaken to ensure alignment between patterns formed on successive layers.

    Abstract translation: 提供了多种电化学制造方法和装置，用于使用粘附的掩模（例如由液体光致抗蚀剂或干膜形成）从多层沉积材料制备多层结构（例如具有中尺度或微尺度特征），其中两个 或者可以在每层中提供更多的材料，其中至少一种材料是结构材料，并且任何其它材料中的一种或多种可以是在形成结构之后被去除的牺牲材料。 材料可以包括以无电解方式电沉积或沉积的导电材料。 在一些实施例中，特别注意确保在连续层上形成的图案之间的对准。

    ELECTROCHEMICAL FABRICATION METHODS FOR PRODUCING MULTILAYER STRUCTURES INCLUDING THE USE OF DIAMOND MACHINING IN THE PLANARIZATION OF DEPOSITS OF MATERIAL
    5.
    发明申请
    ELECTROCHEMICAL FABRICATION METHODS FOR PRODUCING MULTILAYER STRUCTURES INCLUDING THE USE OF DIAMOND MACHINING IN THE PLANARIZATION OF DEPOSITS OF MATERIAL 审中-公开
    用于生产多层结构的电化学制造方法，包括在材料沉积的平面化中使用金刚石加工

    公开(公告)号：WO2005065430A3

    公开(公告)日：2005-11-03

    申请号：PCT/US2005000165

    申请日：2005-01-03

    Applicant: MICROFABRICA INC ,  COHEN ADAM L ,  FRODIS URI ,  LOCKARD MICHAEL S ,  KUMAR ANANDA H ,  ZHANG GANG ,  SMALLEY DENNIS R

    Inventor： COHEN ADAM L ,  FRODIS URI ,  LOCKARD MICHAEL S ,  KUMAR ANANDA H ,  ZHANG GANG ,  SMALLEY DENNIS R

    IPC: B05D1/38 ,  C08K3/00 ,  C25D3/30 ,  C25D3/38 ,  C25D3/48 ,  C25D5/02 ,  C25D5/10 ,  C25D21/12 ,  H01L21/288 ,  H01L21/301 ,  H01L21/302 ,  H01L21/4763 ,  H01L21/768

    CPC classification number: C25D5/48 ,  B33Y10/00 ,  B81C1/00492 ,  B81C99/0065 ,  B81C2201/0104 ,  B81C2201/0197 ,  C25D1/00 ,  C25D1/003 ,  C25D5/022 ,  C25D5/10 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/76885 ,  Y10T156/1052

    Abstract: Electrochemical fabrication methods for forming single and multilayer mesoscale and microscale structures are disclosed which include the use of diamond machining (e.g. fly cutting or turning) to planarize layers. Some embodiments focus on systems of sacrificial and structural materials which are useful in Electrochemical fabrication and which can be diamond machined with minimal tool wear (e.g. Ni-P and Cu, Au and Cu, Cu and Sn, Au and Cu, Au and Sn, and Au and Sn-Pb), where the first material or materials are the structural materials and the second is the sacrificial material). Some embodiments focus on methods for reducing tool wear when using diamond machining to planarize structures being electrochemically fabricated using difficult-to-machine materials (e.g. by depositing difficult to machine material selectively and potentially with little excess plating thickness, and/or pre-machining depositions to within a small increment of desired surface level (e.g. using lapping or a rough cutting operation) and then using diamond fly cutting to complete the process, and/or forming structures or portions of structures from thin walled regions of hard-to-machine materials as opposed to wide solid regions of structural material.

    Abstract translation: 公开了用于形成单层和多层中尺度和微尺度结构的电化学制造方法，其包括使用金刚石机械加工（例如飞切或车削）来平面化层。 一些实施例集中于可用于电化学制造的牺牲和结构材料系统，并且该系统可以以最小的工具磨损进行金刚石加工（例如，Ni-P和Cu，Au和Cu，Cu和Sn，Au和Cu，Au和Sn， 以及Au和Sn-Pb），其中第一种或多种材料是结构材料，第二种是牺牲材料）。 一些实施例集中于减少使用金刚石加工来平坦化使用难加工材料电化学制造的结构时的工具磨损的方法（例如，通过选择性沉积困难的机械材料并且可能几乎没有过量的电镀厚度，和/或预加工沉积 在期望的表面水平的小增量内（例如使用研磨或粗切割操作），然后使用金刚石飞切来完成该过程，和/或从难加工材料的薄壁区域形成结构或部分结构 而不是结构材料的广阔固体区域。

Patent Agency Ranking