公开(公告)号：US20150262874A1

公开(公告)日：2015-09-17

申请号：US14440814

申请日：2013-11-05

Applicant: MICRONIT MICROFLUIDICS B.V.

Inventor： Ronny Van'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Peter Tijssen

IPC: H01L21/768 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L21/76879 ,  B81C1/00095 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention relates to a method for forming an electrically conductive via in a substrate and such a substrate comprising an electrically conductive, said method comprising the steps, to be performed in suitable sequence, of: a) providing a first substrate as said substrate; b) forming a through hole in said first substrate; c) providing a second substrate; d) bringing a first surface of said second substrate into contact with said first surface of said first substrate, such that said through hole in said first substrate is covered by said first surface of said second substrate; e) filling said through hole in said first substrate with an electrically conductive material by means of electroplating for forming said electrically conductive via, and f) removing said second substrate, wherein said first surface of said first substrate and said first surface of said second substrate each have a surface roughness R a of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and in that in step (d) said first surface of said first substrate and said first surface of said second substrate are brought in direct contact with each other, such that a direct bond is formed there between.

Abstract translation: 本发明涉及一种用于在衬底中形成导电通孔的方法，并且这种衬底包括导电的所述方法，所述方法包括以适当顺序执行的以下步骤：a）提供作为所述衬底的第一衬底; b）在所述第一衬底中形成通孔; c）提供第二衬底; d）使所述第二基板的第一表面与所述第一基板的所述第一表面接触，使得所述第一基板中的所述通孔被所述第二基板的所述第一表面覆盖; e）通过用于形成所述导电通孔的电镀用导电材料填充所述第一衬底中的所述通孔，以及f）去除所述第二衬底，其中所述第一衬底的所述第一表面和所述第二衬底的所述第一表面 每个表面粗糙度R a小于2nm，优选小于1nm，更优选小于0.5nm，并且在步骤（d）中，所述第一衬底的所述第一表面和所述第二衬底的所述第一表面是 导致彼此直接接触，从而在其间形成直接粘结。

公开(公告)号：US09748136B2

公开(公告)日：2017-08-29

申请号：US14440814

申请日：2013-11-05

Applicant: MICRONIT MICROFLUIDICS B.V.

Inventor： Ronny Van 'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Peter Tijssen

IPC: H01L21/768 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48 ,  H01L21/683 ,  B81C1/00

CPC classification number: H01L21/76879 ,  B81C1/00095 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/147 ,  H01L23/49827 ,  H01L2221/68345 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming an electrically conductive via in a substrate that includes the steps of: forming a through hole in a first substrate; bringing a first surface of a second substrate into contact with the first surface of the first substrate, such that the through hole in the first substrate is covered by the first surface of the second substrate; filling the through hole in the first substrate with an electrically conductive material by electroplating to form the electrically conductive via, and removing the second substrate, wherein the first surface of the first and the second substrate each have a surface roughness Ra of less than 2 nm, preferably less than 1 nm, more preferably less than 0.5 nm, and the first surface of the first and the second substrate are brought in direct contact with each other, such that a direct bond is formed there between.

公开(公告)号：US09573804B2

公开(公告)日：2017-02-21

申请号：US14361683

申请日：2012-12-21

Applicant: Micronit Microfluidics B.V.

Inventor： Ronny Van 'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Marinus Bernardus Olde Riekerink ,  Peter Tijssen ,  Hendrik Jan Hildebrand Tigelaar ,  Jean-Noël Fehr ,  Jean-Christophe Roulet ,  Amitava Gupta

IPC: B81C1/00 ,  H01L23/10 ,  H01L21/50 ,  B81C3/00 ,  C23F1/02

CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract translation: 本发明涉及通过使用用于提供接合的中间薄膜金属层将至少两个基板（例如由玻璃，硅，陶瓷，铝或硼制成）接合的方法，所述方法包括以下步骤：a） 提供所述两个基板; b）将所述薄膜金属层沉积在所述两个基板的第一基板的表面的至少一部分上; c）使所述第二基板的表面与所述第一基板的所述表面上的所述薄膜金属层接触，从而提供所述第二基板和所述第一基板上的所述薄膜金属层之间的接合; 以及d）至少局部加强第一基板上的第二基板和薄膜金属层之间的接合。 本发明还涉及包括例如由玻璃，硅，陶瓷，铝或硼制成的两个基底和中间薄膜金属层的器件。

公开(公告)号：US20140335301A1

公开(公告)日：2014-11-13

申请号：US14361683

申请日：2012-12-21

Applicant: Micronit Microfluidics B.V.

Inventor： Ronny Van 'T Oever ,  Marko Theodoor Blom ,  Jeroen Haneveld ,  Johannes Oonk ,  Marinus Bernardus Olde Riekerink ,  Peter Tijssen ,  Hendrik Jan Hildebrand Tigelaar ,  Jean-Noël Fehr ,  Jean-Christophe Roulet ,  Amitava Gupta

IPC: B81C1/00 ,  C23F1/02

CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon, ceramic, aluminum, or boron, and an intermediate thin film metal layer.

Abstract translation: 本发明涉及通过使用用于提供接合的中间薄膜金属层将至少两个基板（例如由玻璃，硅，陶瓷，铝或硼制成）接合的方法，所述方法包括以下步骤：a） 提供所述两个基板; b）将所述薄膜金属层沉积在所述两个基板的第一基板的表面的至少一部分上; c）使所述第二基板的表面与所述第一基板的所述表面上的所述薄膜金属层接触，从而提供所述第二基板和所述第一基板上的所述薄膜金属层之间的接合; 以及d）至少局部加强第一基板上的第二基板和薄膜金属层之间的接合。 本发明还涉及包括例如由玻璃，硅，陶瓷，铝或硼制成的两个基底和中间薄膜金属层的器件。