公开(公告)号：WO2014200328A1

公开(公告)日：2014-12-18

申请号：PCT/MY2014/000095

申请日：2014-05-02

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  FADZILAH, Arifin

IPC: H01L21/3065

CPC classification number: B81C1/00031 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C2201/0132

Abstract: The present invention relates to a method for forming Si grass structure comprising: forming a silicon well (100); and etching the silicon well to form silicon grass structure (200); characterized in that the step of forming silicon well (100) is conducted using a standard deep reactive ion etching Bosch process using photoresist as the masking material. The present invention provides more surface area of the sensing membrane thus increasing the performance of a sensor.

Abstract translation: 本发明涉及一种形成硅草结构的方法，包括：形成硅阱（100）; 并蚀刻硅阱以形成硅草结构（200）; 其特征在于，使用使用光致抗蚀剂作为掩蔽材料的标准深反应离子蚀刻Bosch工艺来进行形成硅阱（100）的步骤。 本发明提供了更多的传感膜的表面积，从而提高了传感器的性能。

公开(公告)号：WO2012067488A1

公开(公告)日：2012-05-24

申请号：PCT/MY2011/000136

申请日：2011-06-23

Applicant: MIMOS BERHAD ,  DANIEL, Bien Chia Sheng ,  MOHSEN, Nabipoor ,  MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  RAHIMAH, Mohd Saman ,  SITI AISHAH, Mohamad Badaruddin ,  ABDUL GHANI, Othaman

Inventor： DANIEL, Bien Chia Sheng ,  MOHSEN, Nabipoor ,  MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  RAHIMAH, Mohd Saman ,  SITI AISHAH, Mohamad Badaruddin ,  ABDUL GHANI, Othaman

IPC: G01N27/22

CPC classification number: G01N27/223

Abstract: The present invention relates to a sensor for determining humidity. A humidity sensor (30) comprises of a substrate (32); a bottom membrane (34) positioned above the substrate (32) and a top membrane (36) positioned above the bottom membrane (34) forming a dielectric layer (38); and a plurality of inter-digitated electrodes (40) with changing capacitance in accordance to change in humidity detected by the dielectric layer (38) embedded to the top membrane (36) wherein a plurality of trenches (42) are embedded to the bottom membrane (34) or to the substrate (32) thereby increasing area of exposure to humidity. The present invention also relates to a method for fabricating a humidity sensor.

Abstract translation: 本发明涉及一种用于确定湿度的传感器。 湿度传感器（30）包括基底（32）; 位于所述基底（32）上方的底部膜（34）和位于所述底部膜（34）上方形成介电层（38）的顶部膜（36）。 以及多个数字化电极（40），其根据由嵌入到所述顶部膜（36）中的所述电介质层（38）检测到的湿度变化而改变电容，其中多个沟槽（42）嵌入所述底部膜 （34）或衬底（32），从而增加暴露于湿度的面积。 本发明还涉及一种制造湿度传感器的方法。

公开(公告)号：WO2011149331A1

公开(公告)日：2011-12-01

申请号：PCT/MY2011/000036

申请日：2011-04-19

Applicant: MIMOS BERHAD ,  MUHAMAD, Ramdzan ,  BIEN CHIA SHE, Daniel ,  AZLINA, Mohd Zain ,  SITI, Aishah Bharuddin ,  RAHIMAH, Mohd Saman ,  ABD, Ghani Othaman ,  MOHSEN, Nabipoor

Inventor： MUHAMAD, Ramdzan ,  BIEN CHIA SHE, Daniel ,  AZLINA, Mohd Zain ,  SITI, Aishah Bharuddin ,  RAHIMAH, Mohd Saman ,  ABD, Ghani Othaman ,  MOHSEN, Nabipoor

IPC: G01N27/22 ,  F25D21/02 ,  H01G7/00

CPC classification number: H01G7/00 ,  G01N27/223

Abstract: A novel humidity sensor is described. The capacitive humidity sensor comprises at least two pairs of electrode contact pads (24) spaced apart; and a moisture sensitive film (26) formed around the electrode contact pads. The sensor is characterized in that, at least a pair of metals (28) connect the electrode contact pads to form a pair of l-shaped electrodes of a capacitor, wherein the capacitance measured changes according to humidity. Another sensor embodiment can be formed with contact pads exposed at two side of the moisture sensitive film. A method of fabricating the sensor is also described.

Abstract translation: 描述了一种新颖的湿度传感器。 电容式湿度传感器包括间隔开的至少两对电极接触焊盘（24）; 和形成在电极接触垫周围的湿敏膜（26）。 传感器的特征在于，至少一对金属（28）连接电极接触焊盘以形成电容器的一对l形电极，其中所测量的电容根据湿度而变化。 另一个传感器实施例可以形成有暴露在湿敏膜两侧的接触垫。 还描述了制造传感器的方法。

公开(公告)号：WO2012057603A1

公开(公告)日：2012-05-03

申请号：PCT/MY2010/000288

申请日：2010-11-24

Applicant: MIMOS BERHAD ,  BIEN, Chia Sheng Daniel ,  RAHIMAH, Mohd Saman ,  SITI, Aishah Mohamad Badaruddin ,  AZLINA, Mohd Zain ,  MUHAMAD, Ramdzan Buyong ,  MOHAMAD, Fairuz Amir

Inventor： BIEN, Chia Sheng Daniel ,  RAHIMAH, Mohd Saman ,  SITI, Aishah Mohamad Badaruddin ,  AZLINA, Mohd Zain ,  MUHAMAD, Ramdzan Buyong ,  MOHAMAD, Fairuz Amir

IPC: H01L29/78 ,  H01L29/82

CPC classification number: G01N27/4146

Abstract: The present invention provides an ISFET sensor device and a method to fabricate the ISFET sensor device with nanostructured membrane which will improve the sensitivity and efficiency of the device. The nanostructures can be in unlimited shape or design, in the form of nanowires, nanorings or nanoparticles, fabricated with the function to increase the sensor sensitivity by increasing the surface area of the membrane exposed to the sample solution or electrolyte. The nanostructured membrane can be formed either by nanofabrication techniques which includes lithographic patterning, pattern transfer, thin film deposition and etching methods or by spin coating of nanomaterials and nanowires using various materials, not limited to, such as, Si 3 N 4 [32], polysilicon [34] and metallic nanowires.

Abstract translation: 本发明提供了一种ISFET传感器装置和用于制造具有纳米结构膜的ISFET传感器装置的方法，其将提高装置的灵敏度和效率。 纳米结构可以是纳米线，纳米线或纳米颗粒形式的无限形状或设计，其功能通过增加暴露于样品溶液或电解质的膜的表面积来增加传感器灵敏度。 纳米结构膜可以通过包括光刻图案，图案转移，薄膜沉积和蚀刻方法的纳米制造技术或通过使用各种材料（不限于例如Si 3 N 4 [32]，多晶硅]）的纳米材料和纳米线的旋涂来形成， 34]和金属纳米线。

公开(公告)号：WO2011096790A2

公开(公告)日：2011-08-11

申请号：PCT/MY2010/000317

申请日：2010-12-13

Applicant: MIMOS BERHAD ,  BIEN, Chia Sheng Daniel ,  AZLINA, Mohd Zain ,  LEE, Hing Wah

Inventor： BIEN, Chia Sheng Daniel ,  AZLINA, Mohd Zain ,  LEE, Hing Wah

IPC: H01L27/04

CPC classification number: H01L27/0802

Abstract: The present invention describes a novel method of fabricating nano-resistors (22) which allows full integration with standard CMOS fabrication process. The resistor comprises long and thin nano-structures as resistive element. It is formed by conductive nano-spacers (18B) on insulating layer. An embodiment of such structure is polysilicon nano-structures doped or implanted with n-type or p-type ions (20) to improve material conductance. The electrical properties of the device will change with respect to the dimension of these nano-structures. Resistors with polysilicon nano-structures down to 10 nm can be produced with resulting measured resistance in the MOhm scale.

Abstract translation: 本发明描述了制造纳米电阻器（22）的新颖方法，其允许与标准CMOS制造工艺完全集成。 电阻器包括长而薄的纳米结构作为电阻元件。 它由绝缘层上的导电纳米间隔物（18B）形成。 这种结构的一个实施例是掺杂或注入n型或p型离子（20）以改善材料电导的多晶硅纳米结构。 器件的电性能将随着这些纳米结构的尺寸而改变。 具有低至10nm多晶硅纳米结构的电阻可以在MOhm标度下产生所测量的电阻。

公开(公告)号：WO2015053605A1

公开(公告)日：2015-04-16

申请号：PCT/MY2014/000139

申请日：2014-05-30

Applicant: MIMOS BERHAD

Inventor： MAZLIN, Man ,  MOHAMMAD FAIRUZ, Amir ,  MUHAMAD RAMDZAN, Buyong ,  ZALIHA, Mohamad ,  AZLINA, Mohd Zain

IPC: H01L21/02 ,  C23G1/24

CPC classification number: C23G1/24

Abstract: The present invention relates to a method for eliminating aluminium surface defectson large exposed metalcomprising: conducting a post pad etching treatment (100) on the metal; cold-rinsing the metal (200); and drying the metal (300) using nitrogen;characterized in that the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent. The present invention is advantageous as it is effective in eliminating the white haze effect. The advantage of use of de-ionized (DI) water only cleaning method is that it is more environment-friendly.

Abstract translation: 本发明涉及一种消除铝表面缺陷大暴露金属的方法：在金属上进行后焊盘蚀刻处理（100）; 冷冲洗金属（200）; 并使用氮气干燥金属（300）;其特征在于，在所述金属上进行焊盘蚀刻处理（100），冷冲洗所述金属（200）的步骤; 并用氮气干燥金属（300）包括无化学溶剂。 本发明是有利的，因为它有效地消除白霾效应。 使用去离子（DI）水的清洗方法的优点是更环保。

公开(公告)号：WO2014092541A1

公开(公告)日：2014-06-19

申请号：PCT/MY2013/000242

申请日：2013-12-09

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  SHAIDI, Yasin ,  ABDUL HALIM, Adom

IPC: B81C1/00

CPC classification number: B81C1/00936 ,  B81C2203/0714

Abstract: The present invention relates to a method for releasing a MEMS device which provides a complete dry release method to prevent stiction or adhesion problem during the MEMS device release process. Adopting an all-dry processing avoids the need to perform rinsing and drying process steps during fabrication. The release process is divided into two parts i.e. the backside release (200) and the front side release process (300).

Abstract translation: 本发明涉及一种用于释放MEMS器件的方法，该MEMS器件提供完全干燥释放方法以防止在MEMS器件释放过程期间的粘连或粘附问题。 采用全干式加工避免了在制造过程中执行冲洗和干燥工艺步骤的需要。 释放过程被分为两部分，即背侧释放（200）和前侧释放过程（300）。