公开(公告)号：WO2014200328A1

公开(公告)日：2014-12-18

申请号：PCT/MY2014/000095

申请日：2014-05-02

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  FADZILAH, Arifin

IPC: H01L21/3065

CPC classification number: B81C1/00031 ,  B81B2203/0127 ,  B81B2203/0361 ,  B81C2201/0132

Abstract: The present invention relates to a method for forming Si grass structure comprising: forming a silicon well (100); and etching the silicon well to form silicon grass structure (200); characterized in that the step of forming silicon well (100) is conducted using a standard deep reactive ion etching Bosch process using photoresist as the masking material. The present invention provides more surface area of the sensing membrane thus increasing the performance of a sensor.

Abstract translation: 本发明涉及一种形成硅草结构的方法，包括：形成硅阱（100）; 并蚀刻硅阱以形成硅草结构（200）; 其特征在于，使用使用光致抗蚀剂作为掩蔽材料的标准深反应离子蚀刻Bosch工艺来进行形成硅阱（100）的步骤。 本发明提供了更多的传感膜的表面积，从而提高了传感器的性能。

公开(公告)号：WO2012067488A1

公开(公告)日：2012-05-24

申请号：PCT/MY2011/000136

申请日：2011-06-23

Applicant: MIMOS BERHAD ,  DANIEL, Bien Chia Sheng ,  MOHSEN, Nabipoor ,  MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  RAHIMAH, Mohd Saman ,  SITI AISHAH, Mohamad Badaruddin ,  ABDUL GHANI, Othaman

Inventor： DANIEL, Bien Chia Sheng ,  MOHSEN, Nabipoor ,  MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  RAHIMAH, Mohd Saman ,  SITI AISHAH, Mohamad Badaruddin ,  ABDUL GHANI, Othaman

IPC: G01N27/22

CPC classification number: G01N27/223

Abstract: The present invention relates to a sensor for determining humidity. A humidity sensor (30) comprises of a substrate (32); a bottom membrane (34) positioned above the substrate (32) and a top membrane (36) positioned above the bottom membrane (34) forming a dielectric layer (38); and a plurality of inter-digitated electrodes (40) with changing capacitance in accordance to change in humidity detected by the dielectric layer (38) embedded to the top membrane (36) wherein a plurality of trenches (42) are embedded to the bottom membrane (34) or to the substrate (32) thereby increasing area of exposure to humidity. The present invention also relates to a method for fabricating a humidity sensor.

Abstract translation: 本发明涉及一种用于确定湿度的传感器。 湿度传感器（30）包括基底（32）; 位于所述基底（32）上方的底部膜（34）和位于所述底部膜（34）上方形成介电层（38）的顶部膜（36）。 以及多个数字化电极（40），其根据由嵌入到所述顶部膜（36）中的所述电介质层（38）检测到的湿度变化而改变电容，其中多个沟槽（42）嵌入所述底部膜 （34）或衬底（32），从而增加暴露于湿度的面积。 本发明还涉及一种制造湿度传感器的方法。

公开(公告)号：WO2012074363A1

公开(公告)日：2012-06-07

申请号：PCT/MY2011/000139

申请日：2011-06-23

Applicant: MIMOS BERHAD ,  DANIEL, Bien Chia Sheng ,  RAHIMAH, Mohd Saman ,  MUHAMAD RAMDZAN, Buyong ,  SITI AISHAH, Mohamad Badaruddin

Inventor： DANIEL, Bien Chia Sheng ,  RAHIMAH, Mohd Saman ,  MUHAMAD RAMDZAN, Buyong ,  SITI AISHAH, Mohamad Badaruddin

IPC: H01L21/20 ,  H01L21/311 ,  H01L21/58 ,  H01L21/306 ,  H01L21/318 ,  H01L21/31 ,  H01L21/3213

CPC classification number: H01L21/6835 ,  B81C1/00373 ,  B81C2201/0194 ,  H01L21/76256 ,  H01L27/1266 ,  H01L31/035218 ,  H01L31/1892 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68363 ,  Y02E10/50

Abstract: The present invention relates to a method of transferring a silicon based layer 101 a onto a polymer film 103 that comprises the steps of: preparing an initial substrate 105a; depositing a silicon-based layer 101 a on the initial substrate 105a; etching the silicon-based layer to form desired micro-nano structure; depositing a TiN layer 111 by RF sputtering; depositing a tungsten layer 109; etching back the tungsten layer 109 to form a planarised surface exposing the TiN layer 111 on the top of the silicon-based layer; removing the exposed portions of TiN 111 off the silicon-based layer 101a, thus forming a planarised surface comprising the silicon-based layer 101a with at least one tungsten plug 109 formed therein; coating a polymer film 103 onto the planarised surface; releasing the initial substrate 105a from the other layers; and removing the at least one tungsten plug 109 and TiN layer 111.

Abstract translation: 本发明涉及一种将硅基层101a转移到聚合物膜103上的方法，包括以下步骤：制备初始衬底105a; 在初始衬底105a上沉积硅基层101a; 蚀刻硅基层以形成所需的微纳米结构; 通过RF溅射沉积TiN层111; 沉积钨层109; 蚀刻钨层109以形成平坦的表面，暴露出硅基层顶部的TiN层111; 从硅基层101a除去TiN 111的暴露部分，从而形成包含硅基层101a的平面表面，其中形成有至少一个钨丝塞109; 将聚合物膜103涂覆到平坦的表面上; 从其他层释放初始衬底105a; 以及去除所述至少一个钨插件109和TiN层111。

公开(公告)号：WO2015053605A1

公开(公告)日：2015-04-16

申请号：PCT/MY2014/000139

申请日：2014-05-30

Applicant: MIMOS BERHAD

Inventor： MAZLIN, Man ,  MOHAMMAD FAIRUZ, Amir ,  MUHAMAD RAMDZAN, Buyong ,  ZALIHA, Mohamad ,  AZLINA, Mohd Zain

IPC: H01L21/02 ,  C23G1/24

CPC classification number: C23G1/24

Abstract: The present invention relates to a method for eliminating aluminium surface defectson large exposed metalcomprising: conducting a post pad etching treatment (100) on the metal; cold-rinsing the metal (200); and drying the metal (300) using nitrogen;characterized in that the steps of conducting a post pad etching treatment (100) on the metal, cold-rinsing the metal (200); and drying the metal (300) using nitrogen involve chemical-free solvent. The present invention is advantageous as it is effective in eliminating the white haze effect. The advantage of use of de-ionized (DI) water only cleaning method is that it is more environment-friendly.

Abstract translation: 本发明涉及一种消除铝表面缺陷大暴露金属的方法：在金属上进行后焊盘蚀刻处理（100）; 冷冲洗金属（200）; 并使用氮气干燥金属（300）;其特征在于，在所述金属上进行焊盘蚀刻处理（100），冷冲洗所述金属（200）的步骤; 并用氮气干燥金属（300）包括无化学溶剂。 本发明是有利的，因为它有效地消除白霾效应。 使用去离子（DI）水的清洗方法的优点是更环保。

公开(公告)号：WO2014092541A1

公开(公告)日：2014-06-19

申请号：PCT/MY2013/000242

申请日：2013-12-09

Applicant: MIMOS BERHAD

Inventor： MUHAMAD RAMDZAN, Buyong ,  AZLINA, Mohd Zain ,  SHAIDI, Yasin ,  ABDUL HALIM, Adom

IPC: B81C1/00

CPC classification number: B81C1/00936 ,  B81C2203/0714

Abstract: The present invention relates to a method for releasing a MEMS device which provides a complete dry release method to prevent stiction or adhesion problem during the MEMS device release process. Adopting an all-dry processing avoids the need to perform rinsing and drying process steps during fabrication. The release process is divided into two parts i.e. the backside release (200) and the front side release process (300).

Abstract translation: 本发明涉及一种用于释放MEMS器件的方法，该MEMS器件提供完全干燥释放方法以防止在MEMS器件释放过程期间的粘连或粘附问题。 采用全干式加工避免了在制造过程中执行冲洗和干燥工艺步骤的需要。 释放过程被分为两部分，即背侧释放（200）和前侧释放过程（300）。