公开(公告)号：MY161431A

公开(公告)日：2017-04-14

申请号：MYPI2013003677

申请日：2013-10-07

Applicant: MIMOS BERHAD

Inventor： MAZLIN BIN MAN ,  MOHAMMAD FAIRUZ BIN AMIR ,  MUHAMAD RAMDZAN BUYONG ,  ZALIHA BINTI MOHAMAD ,  AZLINA BINTI MOHD ZAIN

IPC: C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/60

Abstract: THE PRESENT INVENTION RELATES TO A METHOD FOR ELIMINATING ALUMINIUM SURFACE DEFECTS ON LARGE EXPOSED METAL COMPRISING: CONDUCTING A POST PAD ETCHING TREATMENT (100) ON THE METAL; COLD-RINSING THE METAL (200); AND DRYING THE METAL (300) USING NITROGEN; CHARACTERIZED IN THAT THE STEPS OF CONDUCTING A POST PAD ETCHING TREATMENT (100) ON THE METAL, COLD-RINSING THE METAL (200); AND DRYING THE METAL (300) USING NITROGEN INVOLVE CHEMICAL-FREE SOLVENT. THE PRESENT INVENTION IS ADVANTAGEOUS AS IT IS EFFECTIVE IN ELIMINATING THE WHITE HAZE EFFECT. THE ADVANTAGE OF USE OF DEIONIZED (DI) WATER ONLY CLEANING METHOD IS THAT IT IS MORE ENVIRONMENT-FRIENDLY. MOST ILLUSTRATIVE

公开(公告)号：MY178502A

公开(公告)日：2020-10-14

申请号：MYPI2015701771

申请日：2015-06-01

Applicant: MIMOS BERHAD

Inventor： MOHD AZRUL BIN ABDULLAH ,  WAN SABENG BIN WAN ADINI ,  ZALIHA BINTI MOHAMAD ,  MOHD SAIFOL NIZAM BIN MOHD YUSOF

Abstract: The present invention is directed at a method for cleaning nitride residues after etching contact (200) in the fabrication of a high yield power trench MOS barrier Schottky (TMBS) device that can be further applied in TMBS-based electronics. Therefore, according to the present invention, pre-metal dielectric (PMD) and silicon nitride (SiN) are the substances etched at the active area for metal connection (200), wherein SiN is used as etch stop layer to avoid over-etching especially at the guard ring area. The use of SiN introduces the problem of having residues, wherein said nitride residues are then removed through a cleaning treatment regime incorporating both hydrofluoric acid (HF) (400) and phosphoric acid (H3PO4) (500); by which specific process parameters for the cleaning treatment are stated in the present disclosure. The combination of hydrofluoric acid and phosphoric acid results in improved wafer yield, of about 98%, low average leakage current between 162 ? 165 ?A, and wafer yield stability. The present invention has improved yield and reduced reverse leakage current, due to the use of HF in combination with H3PO4 for removal of nitride residues, in a wet cleaning technique, whereby the structure is to be applied as an efficient TMBS device for TMBS-based electronic purposes. FIG. 1