公开(公告)号：SG91317A1

公开(公告)日：2002-09-17

申请号：SG200007433

申请日：2000-12-13

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  DEMKOV ALEXANDER ,  HALLMARK JERALD ALLAN ,  RAMDANI JAMAL

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/78

Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSiÄN1-xOxÜ2, where M is a metal and X is 0≤X