公开(公告)号：JP2001223215A

公开(公告)日：2001-08-17

申请号：JP2000375553

申请日：2000-12-11

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  DEMDOV ALEXANDER ,  HALLMARK JERALD ALLAN ,  RAMDANI JAMAL

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105

Abstract: PROBLEM TO BE SOLVED: To provide a thin and stable crystalline interface on a silicon substrate. SOLUTION: A semiconductor structure consists of a silicon substrate 10, more than one layer of single crystal oxide layers or nitride layers 26 and the interface 14 between the substrate 10 and the more than one layer of the single crystal oxide layers or the nitride layers and this interface is made of a crystalline material of a grating constant to coincide with that of the silicon substrate. The interface consists of a silicon atomic layer, a nitrogen atomic layer and a metal atomic layer in the form of MSiN2, where M is a metal. In a second embodiment, the interface consists of an atomic layer containing the mixture of a silicon with a metal and the mixture of nitrogen with oxygen in the form of MSi[N1-xOx]2, where M is a metal and (x) and 0

公开(公告)号：SG91317A1

公开(公告)日：2002-09-17

申请号：SG200007433

申请日：2000-12-13

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  WANG JUN ,  DROOPAD RAVINDRANATH ,  DEMKOV ALEXANDER ,  HALLMARK JERALD ALLAN ,  RAMDANI JAMAL

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/78

Abstract: A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface manufactured with a crystalline material which matches the lattice constant of silicon. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSiÄN1-xOxÜ2, where M is a metal and X is 0≤X