公开(公告)号：JPH1140632A

公开(公告)日：1999-02-12

申请号：JP20272798

申请日：1998-07-02

Applicant: MOTOROLA INC

Inventor： JAIN AJAY ,  ROBERT L HANS

IPC: G01N23/223 ,  H01L21/66

Abstract: PROBLEM TO BE SOLVED: To provide a contamination detection system for testing the contamination of the large part of a wafer with good efficiency with respect to time. SOLUTION: A method and device for detecting copper (Cu) contamination on a wafer 120 is started by preparing a wafer 120. The wafer 120 rotates in the surrounding of a rotary shaft through a wafer stage 118 under a motor/ computer control. An X-ray beam 114b is raster-scanned for the whole surface of the rotating wafer 120, by using the motor/computer control of a monochrometer 116 in addition to the rotation of the wafer 120. Plural X-ray detectors 122 are allowed to approach the surface to be scanned of the wafer 120 and arrayed in more than one row. The detectors 122 detect the X-ray fluorescence radiation from the surface of the wafer 120. Thus, the copper contamination of the wafer 120 can be judged in an accurate and efficient method with respect time for detecting contamination by in-line in a normal wafer processing.

公开(公告)号：JPH10284440A

公开(公告)日：1998-10-23

申请号：JP10568398

申请日：1998-03-31

Applicant: MOTOROLA INC

Inventor： JAIN AJAY ,  WEITZMAN ELIZABETH

IPC: H01L21/285 ,  C23C16/34 ,  H01L21/205 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: PROBLEM TO BE SOLVED: To form a tantalum nitride or a silicon tantalum nitride for a diffusion diaphragm of good film quality at a low wafer temperature, by introducing a metalorganic precursor and a semiconductor source into a CVD reaction device where a semiconductor substrate is positioned. SOLUTION: A heat-resistant metal nitride and a heat-resistant silicon nitride metal are formed by a metalorganic chemistry deposition method. In particular, a tantalum nitride layer 34 is formed by chemical vapor-deposition method using ethyltribis (diethylamide) tantalum and ammonia. With such semiconductor source content as silane, a silicon tantalum nitride layer may be formed. These layers contain carbon of relatively small amount in its film, and can be formed at such wafer temperature as, for example, below 500 deg.C. With the tantalum nitride, generally, a deposition takes place in a reaction device under a pressure of 5-15 Torr.

公开(公告)号：JP2000049229A

公开(公告)日：2000-02-18

申请号：JP20555399

申请日：1999-07-21

Applicant: MOTOROLA INC

Inventor： GREGOR BRACKELMAN ,  RAMUNAS BENKATORAMAN ,  MATTHEW THOMAS HERICK ,  CINDY R SIMPSON ,  FIORDALICE ROBERT W ,  DENNING DEAN J ,  JAIN AJAY ,  CHRISTIANO CAPASO

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L21/82 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a mutual connection structure in a semiconductor device that has advantages as compared with prior art and the method for forming the same. SOLUTION: A mutual connection part 60 is formed on a substrate 10. In an embodiment, an adhesive/barrier layer 81, a copper alloy seed layer 42 and a copper film 43 are deposited on the substrate 10, and the substrate 10 is annealed. In an alternative embodiment, the copper film is deposited on the substrate and the copper film is annealed. Furthermore, in another embodiment, the adhesive/barrier layer 81, a seed layer 82, a conductive film 83 and a copper alloy capping film 84 are deposited on the substrate 10 to form a mutually connecting part 92. The stages of depositing and annealing are performed on a common processing platform.

公开(公告)号：JPH1140671A

公开(公告)日：1999-02-12

申请号：JP20276698

申请日：1998-07-02

Applicant: MOTOROLA INC

Inventor： JAIN AJAY

IPC: H01L21/3205 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To make a strong contact generate between a compound copper layer and a diffusion barrier film by transferring a part of an insulating layer which is made patterning into the barrier film, by adhering a contact layer on the barrier film and by forming a conductive metal containing layer on the contact layer. SOLUTION: A second insulating layer is formed on a substrate 12 and a mutual junction 28. Next a dual in lay apperture is formed by patterning the insulating layer. Next an exposed surface of on oxide film 26 is transferred to a silicon oxy-nitride diffusion barrier part 56 by performing a plasma nitride step. After that a silicon contact layer 58 is formed on the barrier part 56. After a copper seed layer is adhered on the insulating layer, a compound copper layer which lies on the contact layer 58 is formed by performing an electrical plating processing. Further a dual in lay constriction 74 including a via part and a mutual functioning channel part is formed by eliminating the parts of the contact layer 58 and the compound copper layer by chemical machining polishing. After that a passivation layer 66 is formed on a semiconductor device 68 including the structure 74.

公开(公告)号：JPH10321561A

公开(公告)日：1998-12-04

申请号：JP14051498

申请日：1998-05-06

Applicant: MOTOROLA INC

Inventor： JAIN AJAY

IPC: C25D7/12 ,  H01L21/288 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a metallic layer on the surface of a substrate. SOLUTION: This method for forming a copper interconnection 54 starts from the stage of accumulating a barrier layer 48. An intermediate layer 50 is formed on the barrier layer 48 by exposing the barrier layer 48 to a plasma silane environment, the layer 50 is conductive at the time of being accumulated and contact point resistance is not affected. The layer 50 is coated with a copper seed layer 52 on the spot, the layer 52 is not formed inside a peripheral part exclusion region 20 and thus, a part 50a of the layer 50 is exposed. The part 50a is originally oxidized within a room environment and forms a barrier for obstructing the electric plating of copper, and thus the copper is not electrically plated inside the region 20. Thus, the area 50a prevents the jointing of the barrier and the copper, so as to avoid the peeling of the copper while protecting the peripheral part exclusion region which is desired for the electric plating of the copper.

公开(公告)号：SG63831A1

公开(公告)日：1999-03-30

申请号：SG1998000589

申请日：1998-03-20

Applicant: MOTOROLA INC

Inventor： JAIN AJAY ,  WEITZMAN ELIZABETH

IPC: H01L21/285 ,  C23C16/34 ,  H01L21/205 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52

Abstract: A refractory Metal Nitride and a refractory metal Silicon Nitride layer (64) can be formed using metal organic chemical deposition. More specifically, tantalum nitride (TaN) (64) can be formed by a Chemical Vapor Deposition (CVD) using Ethyltrikis (Diethylamido) Tantalum (ETDET) and ammonia (NH3). By the inclusion of silane (SiH4), tantalum silicon nitride (TaSiN) (64) layer can also be formed. Both of these layers can be formed at wafer temperatures lower than approximately 400 INFINITY C with relatively small amounts of carbon (C) within the film. Therefore, the embodiments of the present invention can be used to form tantalum nitride (TaN) or tantalum silicon nitride (TaSiN) (64) that is relatively conformal and has reasonably good diffusion barrier properties.