公开(公告)号：JP2000049229A

公开(公告)日：2000-02-18

申请号：JP20555399

申请日：1999-07-21

Applicant: MOTOROLA INC

Inventor： GREGOR BRACKELMAN ,  RAMUNAS BENKATORAMAN ,  MATTHEW THOMAS HERICK ,  CINDY R SIMPSON ,  FIORDALICE ROBERT W ,  DENNING DEAN J ,  JAIN AJAY ,  CHRISTIANO CAPASO

IPC: H01L23/522 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L21/82 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide a mutual connection structure in a semiconductor device that has advantages as compared with prior art and the method for forming the same. SOLUTION: A mutual connection part 60 is formed on a substrate 10. In an embodiment, an adhesive/barrier layer 81, a copper alloy seed layer 42 and a copper film 43 are deposited on the substrate 10, and the substrate 10 is annealed. In an alternative embodiment, the copper film is deposited on the substrate and the copper film is annealed. Furthermore, in another embodiment, the adhesive/barrier layer 81, a seed layer 82, a conductive film 83 and a copper alloy capping film 84 are deposited on the substrate 10 to form a mutually connecting part 92. The stages of depositing and annealing are performed on a common processing platform.

公开(公告)号：JP2000049137A

公开(公告)日：2000-02-18

申请号：JP17621899

申请日：1999-06-23

Applicant: MOTOROLA INC

Inventor： JOY KIMI WATANABE ,  MATTHEW THOMAS HERICK ,  SPARKS TERRY GRANT ,  NIGEL GRAEME CAVE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a mutual connection structure of semiconductor elements which brings decrease of dielectric constant and simplification of treatment process. SOLUTION: A trench.level dielectric film 26 and a via.level dielectric film 24 are formed on a semiconductor element substrate 10. By using etching chemicals having etching selectivity to the trench.level dielectric film 26 which is higher than to the via.level dielectric film 24, a via aperture 42 is etched in the trench.level dielectric film. A photoresist layer 52 on the trench.level dielectric film 26 is patterned, and a trench aperture 54 is formed. The via.level dielectric film 24 is etched by using second etching chemicals, and the via aperture 42 is extended as far as the via.level dielectric film 24. The trench level.dielectric film 26 is etched, and a trench aperture is formed.