BAND GAP REFERENCE CIRCUIT AND METHOD THEREFOR

    公开(公告)号:JPH10260746A

    公开(公告)日:1998-09-29

    申请号:JP8801898

    申请日:1998-03-16

    Applicant: MOTOROLA INC

    Abstract: PROBLEM TO BE SOLVED: To provide the circuit of a low cost capable of individually performing change in the operation and work of characteristics by adding a current provided with a positive temperature coefficient to the current provided with a negative temperature coefficient and generating the current practically provided with a 0 temperature coefficient. SOLUTION: The control electrode of a first transistor is connected to the second input of a proportional absolute temperature power source 12 and the first current electrode of the first transistor is connected to the first input of the proportional absolute temperature power source 12. The first terminal of a current mirror circuit 34 is connected to the control electrode of the first transistor and the second terminal of the current mirror circuit 34 is connected to the output of the proportional absolute temperature power source 12. The control electrode of a second transistor is connected to the first input of the proportional absolute temperature power source 12 and the second current electrode of the second transistor is connected to the output of the proportional absolute temperature power source 12. In this circuit, the current provided with the positive temperature coefficient is added to the current provided with the negative temperature coefficient and the current practically provided with the 0 temperature coefficient is generated.

    LOW-VOLTAGE OPERATIONAL AMPLIFIER AND ITS METHOD

    公开(公告)号:JPH1051246A

    公开(公告)日:1998-02-20

    申请号:JP8564397

    申请日:1997-03-19

    Applicant: MOTOROLA INC

    Abstract: PROBLEM TO BE SOLVED: To provide a conventional operational amplifier receiving its power from a battery. SOLUTION: The low-voltage operational amplifier 10 is operated at a voltage range of 1-8V over a temperature range of 0 to 70 deg.C. An input stage 12 employs an N-channel depletion mode MOSFET, to amplify differential inputs and for maintaining a prescribed mutual conductance. A source follower MOSFET 13 provides a single gain to a base of a current sink transistor(TR) 18 in the transfer of an AC signal 'stage 1 output'. A sink control circuit 14 and a source-control circuit 22 generate a base drive current in TRs 18, 24. The input signal controls the sink TR through an AC signal path for a 'sink path' signal or a 'source path' signal is generated through a trans-linear loop 16. An output stage provides a sink and source current of about 50mA.

    INPUT STAGE OF LOW VOLTAGE OPERATIONAL AMPLIFIER AND ITS METHOD

    公开(公告)号:JPH1022750A

    公开(公告)日:1998-01-23

    申请号:JP5848497

    申请日:1997-02-25

    Applicant: MOTOROLA INC

    Abstract: PROBLEM TO BE SOLVED: To obtain the operational amplifier capable of a swing capability close to a broad band power supply voltage range at a high speed which is operated over a wide voltage range at a wide temperature range. SOLUTION: An operational amplifier input stage 12 employs an N-channel depletion mode metal oxide semiconductor field effect transistor (MOSFET) to conduct differential input amplification and keeps a prescribed trans- conductance. A source follower MOSFET 13 provides a single gain to transfer an AC signal and an output of stage 1 to a base of a current sink transistor(TR) 18. A sink control circuit 14 and a source control circuit 22 generate a base drive current for TRs 18, 24. An input signal controls an operational amplifier output sink TR through an AC signal path with respect to a sink path-through signal to extract a current or controls an operational amplifier output source TR to supply an operating current by a source path-through signal via a current steering circuit 16.

    Pulsed battery charger circuit
    4.
    发明专利

    公开(公告)号:SG43164A1

    公开(公告)日:1997-10-17

    申请号:SG1996004692

    申请日:1994-12-01

    Applicant: MOTOROLA INC

    Abstract: A pulsed battery charger circuit (11) for charging a battery (28). A control circuit (17) is responsive to a sense circuit (16) that monitors the battery voltage. The control circuit (17) pulses a first current source (25) or a second current source (20). An amplifier (14) is responsive to the first (25) and second (20) current sources for generating first and second predetermined voltages between a drive output (12) and a sense input (13). The first current source (25) is pulsed when the sense circuit (16) senses the battery voltage to be less than a first threshold voltage. The second current source (20) is pulsed when the sense circuit (16) senses the battery voltage to be greater than the first threshold voltage. Both the first (25) and second (20) current sources are disabled when the sense circuit (16) senses the battery voltage to be greater than a second threshold voltage.

    Temperature-coefficient controlled radio frequency signal detecting circuitry

    公开(公告)号:AU667261B2

    公开(公告)日:1996-03-14

    申请号:AU5913394

    申请日:1994-03-29

    Applicant: MOTOROLA INC

    Abstract: A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.

    Band separation reference circuit

    公开(公告)号:DE19804747A1

    公开(公告)日:1998-09-24

    申请号:DE19804747

    申请日:1998-02-06

    Applicant: MOTOROLA INC

    Abstract: The circuit has a source (12) of current proportional to the absolute temp. with two inputs and one output, a first transistor, a current mirror circuit (34) and a second transistor. The first transistor's control electrode and first current carrying electrode are connected to the second and first inputs of the current source respectively. The first and second connections of the current mirror circuit are respectively connected to the first transistor's control electrode and current source's output.The control electrode and the second current carrying electrode of the second transistor are respectively connected to the first current source input and the current source output

    8.
    发明专利
    未知

    公开(公告)号:DE69118984D1

    公开(公告)日:1996-05-30

    申请号:DE69118984

    申请日:1991-07-24

    Applicant: MOTOROLA INC

    Abstract: An amplifier (50) having an input and output stage for providing drive current to a load (RL) coupled thereto includes circuitry (42, 44, 46, 52) that senses when an input signal is applied to the amplifier and is responsive thereto for providing an enabling signal at an output thereof and current regulator circuitry (20, 22) that supplies a low drain current to bias the stages when the amplifier is in a quiescent operating mode absent an applied input signal and that is responsive to the enabling signal for increasing the current supplied to the stages to bias the same in a high bias drain current operating mode.

    Temperature-Coefficient Controlled Radio Frequency Signal Detecting Circuitry

    公开(公告)号:CA2120095A1

    公开(公告)日:1994-10-06

    申请号:CA2120095

    申请日:1994-03-28

    Applicant: MOTOROLA INC

    Abstract: A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.

    Temperature-coefficient controlled radio frequency signal detecting circuitry

    公开(公告)号:AU5913394A

    公开(公告)日:1994-10-06

    申请号:AU5913394

    申请日:1994-03-29

    Applicant: MOTOROLA INC

    Abstract: A TC controlled RF signal detecting circuitry (211) used in the output power control circuit of a TDMA RF signal power amplifier includes positive coefficient current source (303) producing current I+ having a positive TC, negative coefficient current source (305) producing current I- having a negative TC, and current mirror (301) for summing currents I+ and I- to produce substantially identical compensated mirror currents Im1 and Im2. Anti-clamping current mirror (309) mirrors current Im2 to produce compensated currents Ia1 and Ia2, which are applied to and bias a Schottky diode coupled in series to a resistor network in each leg of diode detector (311). Each leg of diode detector (311) has a positive TC, which is substantially offset by the negative TC of compensated currents Ia1 and Ia2. Schottky diode (431) in one leg of diode detector (311) half-wave rectifies RF feedback signal (212) to produce temperature and voltage compensated power level signal (229), which has a DC level proportional to the output power level of RF output signal (214). By using TC controlled RF signal detecting circuitry (211), power level signal (229) has a DC level which is stable to within 5 mV over temperature ranging from -55 DEG C. to +125 DEG C. and over power supply voltage ranging from 2.7 V to 4.75 V.

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