公开(公告)号：EP1670015A4

公开(公告)日：2007-02-21

申请号：EP04772724

申请日：2004-08-27

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KOMATSU SHOJIRO ,  MORIYOSHI YUSUKE ,  SHIMIZU YOSHIKI ,  OKADA KATSUYUKI

IPC: C01B21/064 ,  H01J1/304 ,  C23C16/34 ,  C23C16/38 ,  C23C16/48 ,  H01J9/02

CPC classification number: H01J1/304 ,  C23C16/342 ,  C23C16/482 ,  H01J9/025 ,  H01J2201/30446 ,  Y10T428/24355

Abstract: A method for preparing an sp bonding boron nitride film exhibits excellent electric field electron emission characteristics which comprises introducing a reaction gas containing a boron source and a nitrogen source into a reaction vessel, adjusting the temperature of a substrate to the range of room temperature to 1300°C, and irradiating the substrate with an ultraviolet light with or without the generation of a plasma, to thereby form a surface structure excellent in electric field electron emission characteristics on the substrate by a reaction from the vapor phase in a self-forming manner. The film prepared by the above method is a material which, in addition to the above characteristics, has high resistance to electric field strength, can emit electrons with a great current density, and is free from the deterioration thereof.

公开(公告)号：EP1518824A4

公开(公告)日：2009-06-17

申请号：EP03738617

申请日：2003-07-01

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KOMATSU SHOJIRO ,  OKADA KATSUYUKI ,  MORIYOSHI YUSUKE

IPC: C01B21/064 ,  C09K11/08 ,  C09K11/63 ,  C23C14/00 ,  C23C14/06 ,  C23C14/28 ,  C23C16/34 ,  C23C16/38 ,  C23C16/48 ,  C23C16/50 ,  C23C16/513 ,  H01L33/30 ,  H01L33/44

CPC classification number: C09K11/63 ,  C09K11/0883 ,  C23C14/0026 ,  C23C14/0647 ,  C23C14/28 ,  C23C16/342 ,  C23C16/482 ,  C23C16/50 ,  C23C16/513

公开(公告)号：DE112005003033T5

公开(公告)日：2007-12-20

申请号：DE112005003033

申请日：2005-12-21

Applicant: NAT INST FOR MATERIALS SCIENCE

Inventor： KOMATSU SHOJIRO ,  MORIYOSHI YUSUKE ,  OKADA KATSUYUKI

IPC: H01J1/304 ,  H01J9/02

Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.